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2SC4217 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4217
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 300 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 70 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO126
 

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2SC4217 Datasheet (PDF)

 ..1. Size:88K  sanyo
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2SC4217

Ordering number:EN2968NPN Triple Diffused Planar Silicon Transistor2SC4217Color TV Chroma Output andAudio Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Micaless package facilitating easy mounting.2042A[2SC4217]B : BaseC : CollectorE : EmitterSANYO : TO-126MLSpecificationsAbsolute Maximum Ratings at Ta = 25C

 8.1. Size:290K  toshiba
2sc4215.pdf pdf_icon

2SC4217

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo

 8.2. Size:274K  toshiba
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2SC4217

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance: RON = 1 (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Absolute Maximum

 8.3. Size:289K  toshiba
2sc4213.pdf pdf_icon

2SC4217

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: hFE = 200~1200 Small package Maximum Ra

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: T1888 | MMBTA14LT1G | TIP32B | MMBTA14LT1 | TIP42C-Y

 

 
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