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2SC4217 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4217
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 300 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 70 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar 2SC4217

 

2SC4217 Datasheet (PDF)

 ..1. Size:88K  sanyo
2sc4217.pdf pdf_icon

2SC4217

Ordering number EN2968 NPN Triple Diffused Planar Silicon Transistor 2SC4217 Color TV Chroma Output and Audio Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Micaless package facilitating easy mounting. 2042A [2SC4217] B Base C Collector E Emitter SANYO TO-126ML Specifications Absolute Maximum Ratings at Ta = 25 C

 8.1. Size:290K  toshiba
2sc4215.pdf pdf_icon

2SC4217

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

 8.2. Size:274K  toshiba
2sc4213-a 2sc4213-b.pdf pdf_icon

2SC4217

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse hFE Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance RON = 1 (typ.) (IB = 5 mA) High DC current gain hFE = 200 to 1200 Small package Absolute Maximum

 8.3. Size:289K  toshiba
2sc4213.pdf pdf_icon

2SC4217

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra

Otros transistores... 2SC4209 , 2SC4210 , 2SC4211 , 2SC4212 , 2SC4213 , 2SC4214 , 2SC4215 , 2SC4216 , BC558 , 2SC4218 , 2SC4219 , 2SC4220 , 2SC4221 , 2SC4222 , 2SC4223 , 2SC4224 , 2SC4229 .

History: BDX40-7

 

 
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