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2SC4219 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4219
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO218
 

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2SC4219 Datasheet (PDF)

 ..1. Size:92K  sanyo
2sc4219.pdf pdf_icon

2SC4219

Ordering number:EN2709NPN Triple Diffused Planar Silicon Transistor2SC4219400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliabilityunit:mm(VCEO 400V).2049C Fast switching speed (tf=0.1 s typ).[2SC4219] Wide ASO.10.24.51.3 Adoption of MBIT process. Suitable for sets whose height is restricted.

 8.1. Size:290K  toshiba
2sc4215.pdf pdf_icon

2SC4219

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo

 8.2. Size:274K  toshiba
2sc4213-a 2sc4213-b.pdf pdf_icon

2SC4219

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance: RON = 1 (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Absolute Maximum

 8.3. Size:289K  toshiba
2sc4213.pdf pdf_icon

2SC4219

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: hFE = 200~1200 Small package Maximum Ra

Otros transistores... 2SC4211 , 2SC4212 , 2SC4213 , 2SC4214 , 2SC4215 , 2SC4216 , 2SC4217 , 2SC4218 , 2SC945 , 2SC4220 , 2SC4221 , 2SC4222 , 2SC4223 , 2SC4224 , 2SC4229 , 2SC423 , 2SC4230 .

History: GSH9032E | CMUT5087E | 2SB560G | SDTC144EET1G | 40616 | KS8550L-C

 

 
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