2SC4229 Datasheet. Equivalente

 8.1. Size:106K  sanyo
 2sc4220.pdf

Ordering number EN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4220] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

 8.2. Size:95K  sanyo
 2sc4222.pdf

Ordering number EN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4222] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

 8.3. Size:107K  sanyo
 2sc4221.pdf

Ordering number EN2816B NPN Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4221] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

 8.4. Size:97K  sanyo
 2sc4224.pdf

Ordering number EN2763A NPN Triple Diffused Planar Silicon Transistor 2SC4224 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4224] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

 8.5. Size:93K  sanyo
 2sc4223.pdf

Ordering number EN2762A NPN Triple Diffused Planar Silicon Transistor 2SC4223 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4223] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.

 8.6. Size:257K  nec
 ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application

 8.7. Size:247K  nec
 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

 8.8. Size:105K  nec
 2sc4226.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

 8.9. Size:50K  nec
 2sc4227.pdf

DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied small

 8.10. Size:51K  nec
 2sc4228.pdf

DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. It is suitable for a high density surface mount assembly since the 2.1 0.1 transistor has been applied super mini mold pa

 8.11. Size:218K  nec
 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a

 8.12. Size:41K  nec
 2sc4225.pdf

DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band. 2.1 0.1 It has large dynamic range and good current characteristics. 1.25 0.1 FEATURES 2 Low Noise

 8.13. Size:252K  secos
 2sc4226.pdf

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L 3 Power dissipation.(PC=150mW) 3 Top View C B 1 1 2 2 K E APPLICATIONS High frequency low noise amplifier. D H J F G CLASSIFICATION OF hFE Pro

 8.14. Size:191K  lrc
 l2sc4226t1g.pdf

LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix

 8.15. Size:933K  kexin
 2sc4226.pdf

SMD Type Transistors NPN Transistors 2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

 8.16. Size:1005K  slkor
 2sc4228a 2sc4228b 2sc4228c 2sc4228d 2sc4228e.pdf

2SC4228 NPN 2SC4228 NPN SOT-323 VHF UHF S21e 2 5.5 dB @ VCE=3V IC=5mA f=2GHz

 8.17. Size:373K  slkor
 2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3

 8.18. Size:495K  cn evvo
 2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO

 8.19. Size:531K  cn shikues
 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf

2SC4226 NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption of noise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable for high density surface patch installation, mainly for installation, mainly for the VHF, UHF low noise ampli

 8.20. Size:861K  inchange semiconductor
 2sc4226.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4226 DESCRIPTION Low Collector Curren -I = 0.1A C Low Collector Power Pc=0.1W With SOT-323 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 8.21. Size:207K  inchange semiconductor
 2sc4227.pdf

isc Silicon NPN RF Transistor 2SC4227 DESCRIPTION Low Noise NF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHz CE C High Gain S 2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz 21e CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.22. Size:590K  inchange semiconductor
 2sc4228.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4228 DESCRIPTION High f T 8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C Low C re 0.3pF TYP., @V = 3 V, I = 0, f = 1 MHz CB E High S 2 21e 7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f