2SC425 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit: mm 1.20.05 Low reverse transfer capacitance: Cre = 0.45 pF (typ.) 0.80.05 Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit2 3 Collector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VColl

2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 100 mWJu

2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit: mm High conversion gain: Gce = 25dB (typ.) Low reverse transfer capacitance: C = 0.45 pF (typ.) reMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO

2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit: mm Good linearity of fT Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 4 VCollector current IC 50 mABase current IB 25 mACollector

Ordering number:EN2925ANPN Triple Diffused Planar Silicon Transistor2SC42571200V/30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4257] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : E

Ordering number:EN2924ANPN Triple Diffused Planar Silicon Transistor2SC42561200V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4256] High reliability (Adoption of HVP process).10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : Em

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INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4252DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2.1 GHz TYP.TLow Output Capacitance-C = 1.1 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4251DESCRIPTIONHigh fT-f = 1100 MHz TYP.TLow Output Capacitance-C = 0.9 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter