2SC425
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC425
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 165
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2SC425
2SC425
Datasheet (PDF)
0.1. Size:124K toshiba
2sc4250fv.pdf 
2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit: mm 1.20.05 Low reverse transfer capacitance: Cre = 0.45 pF (typ.) 0.80.05 Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit2 3 Collector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VColl
0.2. Size:301K toshiba
2sc4252.pdf
2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
0.3. Size:296K toshiba
2sc4251.pdf
2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 100 mWJu
0.4. Size:347K toshiba
2sc4250.pdf
2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit: mm High conversion gain: Gce = 25dB (typ.) Low reverse transfer capacitance: C = 0.45 pF (typ.) reMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO
0.5. Size:303K toshiba
2sc4253.pdf
2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit: mm Good linearity of fT Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 4 VCollector current IC 50 mABase current IB 25 mACollector
0.6. Size:81K sanyo
2sc4257.pdf
Ordering number:EN2925ANPN Triple Diffused Planar Silicon Transistor2SC42571200V/30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4257] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : E
0.7. Size:80K sanyo
2sc4256.pdf
Ordering number:EN2924ANPN Triple Diffused Planar Silicon Transistor2SC42561200V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4256] High reliability (Adoption of HVP process).10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : Em
0.8. Size:314K isahaya
2sc4258.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an
0.9. Size:177K inchange semiconductor
2sc4252.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4252DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2.1 GHz TYP.TLow Output Capacitance-C = 1.1 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25
0.10. Size:178K inchange semiconductor
2sc4251.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4251DESCRIPTIONHigh fT-f = 1100 MHz TYP.TLow Output Capacitance-C = 0.9 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
0.11. Size:195K inchange semiconductor
2sc4250.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
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