2SC4262 Todos los transistores

 

2SC4262 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4262
   Código: IP-
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2500 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO236

 Búsqueda de reemplazo de transistor bipolar 2SC4262

 

2SC4262 Datasheet (PDF)

 ..1. Size:24K  hitachi
2sc4262.pdf

2SC4262
2SC4262

2SC4262Silicon NPN EpitaxialApplicationUHF / VHF Local oscillatorOutlineCMPAK311. Emitter2. Base23. Collector2SC4262Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction tem

 ..2. Size:167K  inchange semiconductor
2sc4262.pdf

2SC4262
2SC4262

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4262DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF~ VHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emi

 8.1. Size:107K  sanyo
2sc4269.pdf

2SC4262
2SC4262

Ordering number:EN2969ANPN Epitaxial Planar Silicon Transistor2SC4269VHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High power gain : PG=15dB typ (f=0.4GHz)unit:mm High cutoff frequency : fT=1.2GHz typ2018B[2SC4269]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : CollectorSANYO : CPSpecificationsAbsolute Maximum

 8.2. Size:24K  hitachi
2sc4265.pdf

2SC4262
2SC4262

2SC4265Silicon NPN EpitaxialApplicationVHF RF amplifier, Local oscillator, MixerOutlineCMPAK311. Emitter2. Base23. Collector2SC4265Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 m

 8.3. Size:24K  hitachi
2sc4261.pdf

2SC4262
2SC4262

2SC4261Silicon NPN EpitaxialApplicationUHF Local oscillatorOutlineCMPAK311. Emitter2. Base23. Collector2SC4261Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction temperatu

 8.4. Size:24K  hitachi
2sc4260.pdf

2SC4262
2SC4262

2SC4260Silicon NPN EpitaxialApplicationUHF frequency converter, Wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4260Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 13 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 10

 8.5. Size:24K  hitachi
2sc4264.pdf

2SC4262
2SC4262

2SC4264Silicon NPN EpitaxialApplicationVHF / UHF RF amplifier, Local oscillator, MixerOutlineCMPAK311. Emitter2. Base23. Collector2SC4264Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC

 8.6. Size:886K  kexin
2sc4269.pdf

2SC4262
2SC4262

SMD Type TransistorsNPN Transistors2SC4269SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.7. Size:177K  inchange semiconductor
2sc4265.pdf

2SC4262
2SC4262

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4265DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO

 8.8. Size:167K  inchange semiconductor
2sc4261.pdf

2SC4262
2SC4262

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4261DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 25 VCBOV Collector-Emitter

 8.9. Size:220K  inchange semiconductor
2sc4260.pdf

2SC4262
2SC4262

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V

 8.10. Size:177K  inchange semiconductor
2sc4264.pdf

2SC4262
2SC4262

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4264DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~VHF RF amplifier, localoscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 V

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History: 2N3295S | 2N2104

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