2SC4272E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4272E 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT89
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2SC4272E datasheet
7.1. Size:94K sanyo
2sc4272.pdf 
Ordering number EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions Small size making it easy to provide high-density, unit mm small-sized hybrid ICs. 2038A [2SC4272] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SANYO PCP (Bottom view) Specifications Absolute Ma
7.2. Size:1285K kexin
2sc4272.pdf
SMD Type Transistors NPN Transistors 2SC4272 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density, 1.Base 27MHz CB Transceiver Driver Applications 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra
8.1. Size:106K sanyo
2sc4270.pdf
Ordering number EN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features Package Dimensions Small noise figure NF=3.0dB typ (f=0.9GHz) unit mm High power gain PG=12dB typ (f=0.9GHz) 2018B High cutoff frequency fT=3.0GHz typ [2SC4270] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collect
8.2. Size:78K sanyo
2sc4271.pdf
Ordering number EN2710A NPN Epitaxial Planar Silicon Transistor 2SC4271 High-Definition CRT Display Video Output Applications Applications Package Dimensions Wide-band amplifiers. unit mm High frequency drivers. 2009B [2SC7271] Features High fT (fT=2.2GHz typ) High current (IC=300mA) Adoption of FBET process. 1 Emitter JEDEC TO-126 2 Collector 3 Bas
8.3. Size:116K fuji
2sc4274.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.5. Size:113K fuji
2sc4275.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.6. Size:111K fuji
2sc4276.pdf
FUJI POWER TRANSISTOR 2SC4276 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor JEDEC - Solid state relay EIAJ SC-65 General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings
8.7. Size:121K jmnic
2sc4278.pdf
Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Contin
8.8. Size:1208K kexin
2sc4270.pdf
SMD Type Transistors NPN Transistors 2SC4270 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
8.9. Size:183K inchange semiconductor
2sc4274.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4274 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state re
8.10. Size:185K inchange semiconductor
2sc4273.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4273 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed High Reliability Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convert
8.11. Size:126K inchange semiconductor
2sc4278.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolut
8.12. Size:216K inchange semiconductor
2sc4275.pdf
isc Silicon NPN Power Transistor 2SC4275 DESCRIPTION Low saturation voltage High Switching Speed High reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High speed DC-DC converter applications Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATIN
8.13. Size:150K inchange semiconductor
2sc4276.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 m
Otros transistores... 2SC4265, 2SC4266, 2SC4269, 2SC427, 2SC4270, 2SC4271, 2SC4272, 2SC4272D, 2N3904, 2SC4272F, 2SC4273, 2SC4274, 2SC4275, 2SC4276, 2SC4277, 2SC4278, 2SC428
