2SC4289A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4289A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 1400 V
Tensión colector-emisor (Vce): 600 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO264
Búsqueda de reemplazo de transistor bipolar 2SC4289A
2SC4289A Datasheet (PDF)
2sc4288.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC4288DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sc4250fv.pdf
2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit: mm 1.20.05 Low reverse transfer capacitance: Cre = 0.45 pF (typ.) 0.80.05 Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit2 3 Collector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VColl
2sc4207.pdf
2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~700 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut
2sc4215.pdf
2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo
2sc4249.pdf
2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications Unit: mm High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter volta
2sc4213-a 2sc4213-b.pdf
2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance: RON = 1 (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Absolute Maximum
2sc4252.pdf
2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
2sc4245.pdf
2SC4245 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4245 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mAColle
2sc4246.pdf
2SC4246 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4246 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter vo
2sc4251.pdf
2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 100 mWJu
2sc4244.pdf
2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications Unit: mm Low noise figure: NF = 4dB (typ.) High power gain: Gpb = 17dB (typ.) Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage VCEO 20
2sc4213.pdf
2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: hFE = 200~1200 Small package Maximum Ra
2sc4248.pdf
2SC4248 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4248 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
2sc4250.pdf
2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit: mm High conversion gain: Gce = 25dB (typ.) Low reverse transfer capacitance: C = 0.45 pF (typ.) reMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO
2sc4253.pdf
2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit: mm Good linearity of fT Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 4 VCollector current IC 50 mABase current IB 25 mACollector
2sc4203.pdf
2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit: mm High Speed Switching Applications High transition frequency: fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance: C
2sc4209.pdf
2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO 80 VEmitter-base voltage VEBO 5 VCollector current IC 30
2sc4214.pdf
2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit: mm Low noise figure: NF = 2.8dB (typ.) High power gain V = 4.5 V: G = 15dB (typ.) CC pb Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage V
2sc4247.pdf
2SC4247 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4247 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
2sc4210.pdf
2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit: mm High DC current gain: hFE = 100~320 Complementary to 2SA1621 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 5 VCollector curre
2sc4220.pdf
Ordering number:EN2825ANPN Triple Diffused Planar Silicon Transistor2SC4220400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4220] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4
2sc4222.pdf
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2sc4270.pdf
Ordering number:EN2971NPN Epitaxial Planar Silicon Transistor2SC4270UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions Small noise figure : NF=3.0dB typ (f=0.9GHz)unit:mm High power gain : PG=12dB typ (f=0.9GHz)2018B High cutoff frequency : fT=3.0GHz typ[2SC4270]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : Collect
2sc4204.pdf
Ordering number:EN2531ANPN Epitaxial Planar Silicon Transistor2SC4204High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers. unit:mm2003BFeatures [2SC4204]5.0 Adoption of MBIT process.4.04.0 High DC current gain (hFE=800 to 3200). Large current capacity (IC=0.7A). Low collector-to-emitter saturation voltage0.
2sc4221.pdf
Ordering number:EN2816BNPN Triple Diffused Planar Silicon Transistor2SC4221500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4221] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4
2sc4219.pdf
Ordering number:EN2709NPN Triple Diffused Planar Silicon Transistor2SC4219400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliabilityunit:mm(VCEO 400V).2049C Fast switching speed (tf=0.1 s typ).[2SC4219] Wide ASO.10.24.51.3 Adoption of MBIT process. Suitable for sets whose height is restricted.
2sc4224.pdf
Ordering number:EN2763ANPN Triple Diffused Planar Silicon Transistor2SC4224800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4224] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4
2sc4272.pdf
Ordering number:EN2970NPN Epitaxial Planar Silicon Transistor2SC427227MHz CB Transceiver Driver ApplicationsFeatures Package Dimensions Small size making it easy to provide high-density,unit:mmsmall-sized hybrid ICs.2038A[2SC4272]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.75 2 : Collector3 : EmitterSANYO : PCP(Bottom view)SpecificationsAbsolute Ma
2sc4257.pdf
Ordering number:EN2925ANPN Triple Diffused Planar Silicon Transistor2SC42571200V/30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4257] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : E
2sc4269.pdf
Ordering number:EN2969ANPN Epitaxial Planar Silicon Transistor2SC4269VHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High power gain : PG=15dB typ (f=0.4GHz)unit:mm High cutoff frequency : fT=1.2GHz typ2018B[2SC4269]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : CollectorSANYO : CPSpecificationsAbsolute Maximum
2sc4256.pdf
Ordering number:EN2924ANPN Triple Diffused Planar Silicon Transistor2SC42561200V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4256] High reliability (Adoption of HVP process).10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : Em
2sc4293.pdf
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2sc4223.pdf
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2sc4217.pdf
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2sc4291.pdf
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2sc4215-o.pdf
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2sc4215-r.pdf
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2sc4208 e.pdf
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2SC4298Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC4298Symbol 2SC4298 Symbol Conditions UnitUnit0.20.2 5.515.60.23.45100maxVCBO 500 ICBO VCB=500V
2sc4215.pdf
2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 VIC Collector Curre
2sc4215 sot-323.pdf
2SC4215 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO
2sc4215.pdf
2SC4215NPN Silicon TransistorP b Lead(Pb)-Free3121. BASE2. EMITTERFEATURES:3. COLLECTORSOT-323(SC-70)* Power dissipationSOT-323 Outline Demensions Unit:mmASOT-323Dim Min MaxA 0.30 0.40B CTOP VIEWB 1.15 1.35C 2.00 2.40D - 0.65DE 0.30 0.40GEG 1.20 1.40HH 1.80 2.20J 0.00 0.10KK 0.80 1.00L 0.42 0.53LM 0.10 0.25J MWEITRON1/4 2
l2sc4226t1g.pdf
LESHAN RADIO COMPANY, LTD.L2SC4226T1GS-L2SC4226T1G312SC-70/SOT-323DESCRIPTIONThe L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF lownoise amplifier.It is suitable for a high density surface mount assembly since the transistorhas been applied small mini mold package.We declare that the material of product compliance with RoHS requirements.S- Prefix
2sc4270.pdf
SMD Type TransistorsNPN Transistors2SC4270SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
2sc4226.pdf
SMD Type TransistorsNPN Transistors2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m
2sc4272.pdf
SMD Type TransistorsNPN Transistors2SC42721.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density,1.Base 27MHz CB Transceiver Driver Applications2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
2sc4269.pdf
SMD Type TransistorsNPN Transistors2SC4269SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc4209.pdf
SMD Type TransistorsNPN Transistors2SC4209SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=80V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SA16201.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc4210.pdf
SMD Type TransistorsNPN Transistors2SC4210SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=30V 1 2+0.10.95-0.1 0.1+0.05-0.01 Complementary to 2SA16211.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
2sc4228a 2sc4228b 2sc4228c 2sc4228d 2sc4228e.pdf
2SC4228NPN2SC4228 NPN SOT-323 VHFUHF :S21e2 5.5 dB @ VCE=3VIC=5mAf=2GHz
2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf
2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3
2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf
2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO
2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf
2SC4226NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption ofnoise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable forhigh density surface patch installation, mainly forinstallation, mainly for the VHF, UHF low noise ampli
2sc4237t8tl.pdf
2SC4237T8TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 7 VEBOI Collector Curr
2sc4237.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4237DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Vo
2sc4205.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4205DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.
2sc4235.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4235DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALU
2sc4265.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4265DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO
2sc4274.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4274DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state re
2sc4231.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4231DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN
2sc4252.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4252DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2.1 GHz TYP.TLow Output Capacitance-C = 1.1 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sc4245.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4245DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2400MHz TYP. @V = 10 V, I = 2 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner , UHF mixer applicationsVHF~UHF band RF amplifier applicationsABSOLUTE MAXIMUM R
2sc4261.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4261DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 25 VCBOV Collector-Emitter
2sc4226.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4226DESCRIPTIONLow Collector Curren -I = 0.1ACLow Collector PowerPc=0.1WWith SOT-323 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for broadband low noise amplifier ;wideband low noise amplifieABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sc4233.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4233DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN
2sc4246.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4246DESCRIPTIONHigh Current-Gain Bandwidth Productf = 1500MHz TYP. @V = 10 V, I = 8 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner , UHF oscillator applicationsTV tuner , UHF converter applicationsABSOLUTE MAXIM
2sc4251.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4251DESCRIPTIONHigh fT-f = 1100 MHz TYP.TLow Output Capacitance-C = 0.9 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc4262.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4262DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF~ VHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emi
2sc4296.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4296DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
2sc4234.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4234DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN
2sc4260.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V
2sc4293.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4293DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLU
2sc4236.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4236DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
2sc4227.pdf
isc Silicon NPN RF Transistor 2SC4227DESCRIPTIONLow NoiseNF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHzCE CHigh GainS 2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz21e CE C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF, UHF low noise amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)
2sc4297.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
2sc4242.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4242DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.8V(Max.)@ I = 4.0ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i
2sc4273.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4273DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convert
2sc4250.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
2sc4264.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4264DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~VHF RF amplifier, localoscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 V
2sc4299.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4299DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
2sc4278.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolut
2sc4228.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4228DESCRIPTIONHigh fT8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHzCE CLow Cre0.3pF TYP., @V = 3 V, I = 0, f = 1 MHzCB EHigh S 221e7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHzCE C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
2sc4232.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4232DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN
2sc4298.pdf
isc Silicon NPN Power Transistor 2SC4298DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc4230.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4230DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RAT
2sc4275.pdf
isc Silicon NPN Power Transistor 2SC4275DESCRIPTIONLow saturation voltageHigh Switching SpeedHigh reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh speed DC-DC converter applicationsSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATIN
2sc4276.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 m
2sc4294.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4294DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput
2sc4237.pdf
isc Silicon NPN Power Transistor 2SC4237DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV C
2sc4247.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4247DESCRIPTIONHigh Current-Gain Bandwidth Productf = 4 GHz TYP. @V = 10 V, I = 10 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner , UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050