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2SC4289A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4289A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 1400 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO264

 Búsqueda de reemplazo de transistor bipolar 2SC4289A

 

2SC4289A Datasheet (PDF)

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2sc4288a.pdf

2SC4289A

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2sc4288.pdf

2SC4289A 2SC4289A

isc Product Specificationisc Silicon NPN Power Transistor 2SC4288DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

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2sc4295m.pdf

2SC4289A 2SC4289A

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2sc4240.pdf

2SC4289A 2SC4289A

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2sc4250fv.pdf

2SC4289A 2SC4289A

2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit: mm 1.20.05 Low reverse transfer capacitance: Cre = 0.45 pF (typ.) 0.80.05 Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit2 3 Collector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VColl

 9.4. Size:242K  toshiba
2sc4207.pdf

2SC4289A 2SC4289A

2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~700 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut

 9.5. Size:290K  toshiba
2sc4215.pdf

2SC4289A 2SC4289A

2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo

 9.6. Size:262K  toshiba
2sc4249.pdf

2SC4289A 2SC4289A

2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications Unit: mm High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter volta

 9.7. Size:274K  toshiba
2sc4213-a 2sc4213-b.pdf

2SC4289A 2SC4289A

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance: RON = 1 (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Absolute Maximum

 9.8. Size:301K  toshiba
2sc4252.pdf

2SC4289A 2SC4289A

2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

 9.9. Size:335K  toshiba
2sc4245.pdf

2SC4289A 2SC4289A

2SC4245 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4245 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mAColle

 9.10. Size:305K  toshiba
2sc4246.pdf

2SC4289A 2SC4289A

2SC4246 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4246 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter vo

 9.11. Size:296K  toshiba
2sc4251.pdf

2SC4289A 2SC4289A

2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 100 mWJu

 9.12. Size:273K  toshiba
2sc4244.pdf

2SC4289A 2SC4289A

2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications Unit: mm Low noise figure: NF = 4dB (typ.) High power gain: Gpb = 17dB (typ.) Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage VCEO 20

 9.13. Size:289K  toshiba
2sc4213.pdf

2SC4289A 2SC4289A

2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: hFE = 200~1200 Small package Maximum Ra

 9.14. Size:300K  toshiba
2sc4248.pdf

2SC4289A 2SC4289A

2SC4248 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4248 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

 9.15. Size:347K  toshiba
2sc4250.pdf

2SC4289A 2SC4289A

2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit: mm High conversion gain: Gce = 25dB (typ.) Low reverse transfer capacitance: C = 0.45 pF (typ.) reMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO

 9.16. Size:303K  toshiba
2sc4253.pdf

2SC4289A 2SC4289A

2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit: mm Good linearity of fT Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 4 VCollector current IC 50 mABase current IB 25 mACollector

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2sc4200.pdf

2SC4289A 2SC4289A

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2sc4203.pdf

2SC4289A 2SC4289A

2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit: mm High Speed Switching Applications High transition frequency: fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance: C

 9.19. Size:187K  toshiba
2sc4209.pdf

2SC4289A 2SC4289A

2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO 80 VEmitter-base voltage VEBO 5 VCollector current IC 30

 9.20. Size:279K  toshiba
2sc4214.pdf

2SC4289A 2SC4289A

2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit: mm Low noise figure: NF = 2.8dB (typ.) High power gain V = 4.5 V: G = 15dB (typ.) CC pb Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage V

 9.21. Size:302K  toshiba
2sc4247.pdf

2SC4289A 2SC4289A

2SC4247 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4247 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

 9.22. Size:195K  toshiba
2sc4210.pdf

2SC4289A 2SC4289A

2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit: mm High DC current gain: hFE = 100~320 Complementary to 2SA1621 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 5 VCollector curre

 9.23. Size:106K  sanyo
2sc4220.pdf

2SC4289A 2SC4289A

Ordering number:EN2825ANPN Triple Diffused Planar Silicon Transistor2SC4220400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4220] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

 9.24. Size:95K  sanyo
2sc4222.pdf

2SC4289A 2SC4289A

Ordering number:EN2761ANPN Triple Diffused Planar Silicon Transistor2SC4222500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4222] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

 9.25. Size:106K  sanyo
2sc4270.pdf

2SC4289A 2SC4289A

Ordering number:EN2971NPN Epitaxial Planar Silicon Transistor2SC4270UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions Small noise figure : NF=3.0dB typ (f=0.9GHz)unit:mm High power gain : PG=12dB typ (f=0.9GHz)2018B High cutoff frequency : fT=3.0GHz typ[2SC4270]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : Collect

 9.26. Size:127K  sanyo
2sc4218.pdf

2SC4289A 2SC4289A

 9.27. Size:106K  sanyo
2sc4204.pdf

2SC4289A 2SC4289A

Ordering number:EN2531ANPN Epitaxial Planar Silicon Transistor2SC4204High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers. unit:mm2003BFeatures [2SC4204]5.0 Adoption of MBIT process.4.04.0 High DC current gain (hFE=800 to 3200). Large current capacity (IC=0.7A). Low collector-to-emitter saturation voltage0.

 9.28. Size:107K  sanyo
2sc4221.pdf

2SC4289A 2SC4289A

Ordering number:EN2816BNPN Triple Diffused Planar Silicon Transistor2SC4221500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4221] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

 9.29. Size:92K  sanyo
2sc4219.pdf

2SC4289A 2SC4289A

Ordering number:EN2709NPN Triple Diffused Planar Silicon Transistor2SC4219400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliabilityunit:mm(VCEO 400V).2049C Fast switching speed (tf=0.1 s typ).[2SC4219] Wide ASO.10.24.51.3 Adoption of MBIT process. Suitable for sets whose height is restricted.

 9.30. Size:97K  sanyo
2sc4224.pdf

2SC4289A 2SC4289A

Ordering number:EN2763ANPN Triple Diffused Planar Silicon Transistor2SC4224800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4224] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

 9.31. Size:94K  sanyo
2sc4272.pdf

2SC4289A 2SC4289A

Ordering number:EN2970NPN Epitaxial Planar Silicon Transistor2SC427227MHz CB Transceiver Driver ApplicationsFeatures Package Dimensions Small size making it easy to provide high-density,unit:mmsmall-sized hybrid ICs.2038A[2SC4272]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.75 2 : Collector3 : EmitterSANYO : PCP(Bottom view)SpecificationsAbsolute Ma

 9.32. Size:53K  sanyo
2sc4292.pdf

2SC4289A

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2sc4257.pdf

2SC4289A 2SC4289A

Ordering number:EN2925ANPN Triple Diffused Planar Silicon Transistor2SC42571200V/30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4257] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : E

 9.34. Size:107K  sanyo
2sc4269.pdf

2SC4289A 2SC4289A

Ordering number:EN2969ANPN Epitaxial Planar Silicon Transistor2SC4269VHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High power gain : PG=15dB typ (f=0.4GHz)unit:mm High cutoff frequency : fT=1.2GHz typ2018B[2SC4269]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : CollectorSANYO : CPSpecificationsAbsolute Maximum

 9.35. Size:80K  sanyo
2sc4256.pdf

2SC4289A 2SC4289A

Ordering number:EN2924ANPN Triple Diffused Planar Silicon Transistor2SC42561200V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4256] High reliability (Adoption of HVP process).10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : Em

 9.36. Size:92K  sanyo
2sc4293.pdf

2SC4289A 2SC4289A

Ordering number:EN2963NPN Triple Diffused Planar Silicon Transistor2SC4293Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=300ns max).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC4293] Adoption of MBIT process.16.05.63.4 On-chip

 9.37. Size:93K  sanyo
2sc4223.pdf

2SC4289A 2SC4289A

Ordering number:EN2762ANPN Triple Diffused Planar Silicon Transistor2SC4223800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4223] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.

 9.38. Size:88K  sanyo
2sc4217.pdf

2SC4289A 2SC4289A

Ordering number:EN2968NPN Triple Diffused Planar Silicon Transistor2SC4217Color TV Chroma Output andAudio Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Micaless package facilitating easy mounting.2042A[2SC4217]B : BaseC : CollectorE : EmitterSANYO : TO-126MLSpecificationsAbsolute Maximum Ratings at Ta = 25C

 9.39. Size:39K  sanyo
2sc4291.pdf

2SC4289A 2SC4289A

Ordering number:EN2679ANPN Triple Diffused Planar Silicon Transistor2SC4291Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=0.3s max).unit:mm High breakdown voltage (VCBO=1500V).2022A High reliability (adoption of HVP process).[2SC4291] Adoption of MBIT process.15.63.24.814.02.0

 9.40. Size:78K  sanyo
2sc4271.pdf

2SC4289A 2SC4289A

Ordering number:EN2710ANPN Epitaxial Planar Silicon Transistor2SC4271High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Wide-band amplifiers.unit:mm High frequency drivers.2009B[2SC7271]Features High fT (fT=2.2GHz typ) High current (IC=300mA) Adoption of FBET process.1 : EmitterJEDEC : TO-1262 : Collector3 : Bas

 9.41. Size:257K  nec
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

2SC4289A 2SC4289A

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

 9.42. Size:247K  nec
ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf

2SC4289A 2SC4289A

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

 9.43. Size:105K  nec
2sc4226.pdf

2SC4289A 2SC4289A

DATA SHEETNPN SILICON RF TRANSISTOR2SC4226NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

 9.44. Size:50K  nec
2sc4227.pdf

2SC4289A 2SC4289A

DATA SHEETSILICON TRANSISTOR2SC4227HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF,in millimetersUHF low noise amplifier.2.1 0.1It is suitable for a high density surface mount assembly since the1.25 0.1transistor has been applied small

 9.45. Size:51K  nec
2sc4228.pdf

2SC4289A 2SC4289A

DATA SHEETSILICON TRANSISTOR2SC4228HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF,in millimeters UHF low noise amplifier.It is suitable for a high density surface mount assembly since the 2.1 0.1 transistor has been applied super mini mold pa

 9.46. Size:218K  nec
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf

2SC4289A 2SC4289A

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

 9.47. Size:41K  nec
2sc4225.pdf

2SC4289A 2SC4289A

DATA SHEETSILICON TRANSISTOR2SC4225MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4225 is an NPN silicon epitaxial transistor designed for lowin millimetersnoise amplifier at VHF through UHF band.2.1 0.1It has large dynamic range and good current characteristics.1.25 0.1FEATURES2 Low Noise

 9.48. Size:269K  mcc
2sc4215-y.pdf

2SC4289A 2SC4289A

MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

 9.49. Size:269K  mcc
2sc4215-o.pdf

2SC4289A 2SC4289A

MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

 9.50. Size:269K  mcc
2sc4215-r.pdf

2SC4289A 2SC4289A

MCC2SC4215-RMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4215-OMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4215-YFax: (818) 701-4939Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian

 9.51. Size:63K  panasonic
2sc4238.pdf

2SC4289A

 9.52. Size:51K  panasonic
2sc4208 e.pdf

2SC4289A 2SC4289A

Transistor2SC4208, 2SC4208ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1619 and 2SA1619A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with2SA1619 and 2SA1619A.Allowing supply with the radial taping.0.7 0.1

 9.53. Size:60K  panasonic
2sc4212.pdf

2SC4289A 2SC4289A

Power Transistors2SC42122SC42122SC42122SC42122SC4212Silicon NPN triple diffusion planar typeUnit: mmFor color TV horizontal deflection driver8.0+0.50.13.20.2 3.160.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter S

 9.54. Size:47K  panasonic
2sc4208.pdf

2SC4289A 2SC4289A

Transistor2SC4208, 2SC4208ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1619 and 2SA1619A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with2SA1619 and 2SA1619A.Allowing supply with the radial taping.0.7 0.1

 9.55. Size:139K  utc
2sc4242.pdf

2SC4289A 2SC4289A

UNISONIC TECHNOLOGIES CO., LTD 2SC4242 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN POWER TRANSISTORS DESCRIPTION The UTC 2SC4242 is a high-voltage, high-speed switchingpower transistor and designed particularly for 115 and 220V switch mode applications, such as switching regulators, inverters, DC-DC converter and general purpose power amplifiers. FEATURES * Low satura

 9.56. Size:116K  fuji
2sc4274.pdf

2SC4289A 2SC4289A

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.57. Size:111K  fuji
2sc4273.pdf

2SC4289A 2SC4289A

 9.58. Size:113K  fuji
2sc4275.pdf

2SC4289A 2SC4289A

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.59. Size:111K  fuji
2sc4276.pdf

2SC4289A 2SC4289A

FUJI POWER TRANSISTOR2SC4276TRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesHigh voltage,High speed switchingLow saturation voltageHigh reliabilityApplicationsSwitching regulatorsDC-DC convertorJEDEC -Solid state relay EIAJ SC-65General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings

 9.60. Size:24K  hitachi
2sc4265.pdf

2SC4289A 2SC4289A

2SC4265Silicon NPN EpitaxialApplicationVHF RF amplifier, Local oscillator, MixerOutlineCMPAK311. Emitter2. Base23. Collector2SC4265Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 m

 9.61. Size:24K  hitachi
2sc4261.pdf

2SC4289A 2SC4289A

2SC4261Silicon NPN EpitaxialApplicationUHF Local oscillatorOutlineCMPAK311. Emitter2. Base23. Collector2SC4261Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction temperatu

 9.62. Size:24K  hitachi
2sc4262.pdf

2SC4289A 2SC4289A

2SC4262Silicon NPN EpitaxialApplicationUHF / VHF Local oscillatorOutlineCMPAK311. Emitter2. Base23. Collector2SC4262Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction tem

 9.63. Size:24K  hitachi
2sc4260.pdf

2SC4289A 2SC4289A

2SC4260Silicon NPN EpitaxialApplicationUHF frequency converter, Wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4260Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 13 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 10

 9.64. Size:24K  hitachi
2sc4264.pdf

2SC4289A 2SC4289A

2SC4264Silicon NPN EpitaxialApplicationVHF / UHF RF amplifier, Local oscillator, MixerOutlineCMPAK311. Emitter2. Base23. Collector2SC4264Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC

 9.65. Size:120K  mospec
2sc4242.pdf

2SC4289A 2SC4289A

AAA

 9.66. Size:189K  secos
2sc4215.pdf

2SC4289A 2SC4289A

2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Small reverse transfer capacitanceCre = 0.55pF (typ.). A Low noise figureNF=2dB (typ.) (f=100 MHz) L3 3Top View C B1CLASSIFICATION OF hFE 1 22K EProduct-Rank 2SC4215-R 2SC42

 9.67. Size:252K  secos
2sc4226.pdf

2SC4289A 2SC4289A

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L3 Power dissipation.(PC=150mW) 3Top View C B11 22K EAPPLICATIONS High frequency low noise amplifier. DH JF GCLASSIFICATION OF hFE Pro

 9.68. Size:314K  isahaya
2sc4258.pdf

2SC4289A 2SC4289A

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

 9.69. Size:546K  jiangsu
2sc4215.pdf

2SC4289A 2SC4289A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4215 TRANSISTOR (NPN) FEATURES 1. BASE Small reverse transfer capacitance: Cre= 0.55pF(typ.) 2. EMITTER Low noise figure: NF=2dB (typ.) (f=100 MHz) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base

 9.70. Size:237K  jmnic
2sc4297.pdf

2SC4289A 2SC4289A

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 9.71. Size:237K  jmnic
2sc4299.pdf

2SC4289A 2SC4289A

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4299 DESCRIPTION With TO-3PML package High voltage ,high switching speed Wide area of safe operation APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

 9.72. Size:121K  jmnic
2sc4278.pdf

2SC4289A

Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Contin

 9.73. Size:233K  jmnic
2sc4298.pdf

2SC4289A 2SC4289A

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 9.74. Size:25K  sanken-ele
2sc4296.pdf

2SC4289A

2SC4296Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4296 Symbol Conditions 2SC4296Unit Unit0.20.2 5.515.60.23.45VCBO 500 ICBO VCB=500V 100maxV

 9.75. Size:25K  sanken-ele
2sc4297.pdf

2SC4289A

2SC4297Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit0.20.2 5.515.60.23.45VCBO V ICBO VCB=500V 100max A50

 9.76. Size:25K  sanken-ele
2sc4299.pdf

2SC4289A

2SC4299Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4299 Symbol Conditions 2SC4299 UnitUnit0.20.2 5.515.60.23.45VCBO 900 ICBO VCB=800V 100max AVVCEO 800 IE

 9.77. Size:26K  sanken-ele
2sc4298.pdf

2SC4289A

2SC4298Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC4298Symbol 2SC4298 Symbol Conditions UnitUnit0.20.2 5.515.60.23.45100maxVCBO 500 ICBO VCB=500V

 9.78. Size:882K  htsemi
2sc4215.pdf

2SC4289A 2SC4289A

2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 VIC Collector Curre

 9.79. Size:265K  lge
2sc4215 sot-323.pdf

2SC4289A 2SC4289A

2SC4215 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO

 9.80. Size:649K  wietron
2sc4215.pdf

2SC4289A 2SC4289A

2SC4215NPN Silicon TransistorP b Lead(Pb)-Free3121. BASE2. EMITTERFEATURES:3. COLLECTORSOT-323(SC-70)* Power dissipationSOT-323 Outline Demensions Unit:mmASOT-323Dim Min MaxA 0.30 0.40B CTOP VIEWB 1.15 1.35C 2.00 2.40D - 0.65DE 0.30 0.40GEG 1.20 1.40HH 1.80 2.20J 0.00 0.10KK 0.80 1.00L 0.42 0.53LM 0.10 0.25J MWEITRON1/4 2

 9.81. Size:191K  lrc
l2sc4226t1g.pdf

2SC4289A 2SC4289A

LESHAN RADIO COMPANY, LTD.L2SC4226T1GS-L2SC4226T1G312SC-70/SOT-323DESCRIPTIONThe L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF lownoise amplifier.It is suitable for a high density surface mount assembly since the transistorhas been applied small mini mold package.We declare that the material of product compliance with RoHS requirements.S- Prefix

 9.82. Size:1208K  kexin
2sc4270.pdf

2SC4289A 2SC4289A

SMD Type TransistorsNPN Transistors2SC4270SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect

 9.83. Size:933K  kexin
2sc4226.pdf

2SC4289A 2SC4289A

SMD Type TransistorsNPN Transistors2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

 9.84. Size:1285K  kexin
2sc4272.pdf

2SC4289A 2SC4289A

SMD Type TransistorsNPN Transistors2SC42721.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density,1.Base 27MHz CB Transceiver Driver Applications2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

 9.85. Size:886K  kexin
2sc4269.pdf

2SC4289A 2SC4289A

SMD Type TransistorsNPN Transistors2SC4269SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 9.86. Size:879K  kexin
2sc4209.pdf

2SC4289A 2SC4289A

SMD Type TransistorsNPN Transistors2SC4209SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=80V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SA16201.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

 9.87. Size:889K  kexin
2sc4210.pdf

2SC4289A 2SC4289A

SMD Type TransistorsNPN Transistors2SC4210SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=30V 1 2+0.10.95-0.1 0.1+0.05-0.01 Complementary to 2SA16211.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

 9.88. Size:1005K  slkor
2sc4228a 2sc4228b 2sc4228c 2sc4228d 2sc4228e.pdf

2SC4289A 2SC4289A

2SC4228NPN2SC4228 NPN SOT-323 VHFUHF :S21e2 5.5 dB @ VCE=3VIC=5mAf=2GHz

 9.89. Size:373K  slkor
2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf

2SC4289A 2SC4289A

2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3

 9.90. Size:495K  cn evvo
2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf

2SC4289A 2SC4289A

2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO

 9.91. Size:531K  cn shikues
2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf

2SC4289A 2SC4289A

2SC4226NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption ofnoise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable forhigh density surface patch installation, mainly forinstallation, mainly for the VHF, UHF low noise ampli

 9.92. Size:1278K  cn sps
2sc4237t8tl.pdf

2SC4289A 2SC4289A

2SC4237T8TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 7 VEBOI Collector Curr

 9.93. Size:171K  cn sptech
2sc4237.pdf

2SC4289A 2SC4289A

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4237DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Vo

 9.94. Size:184K  inchange semiconductor
2sc4205.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4205DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

 9.95. Size:188K  inchange semiconductor
2sc4235.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4235DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALU

 9.96. Size:177K  inchange semiconductor
2sc4265.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4265DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO

 9.97. Size:183K  inchange semiconductor
2sc4274.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4274DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state re

 9.98. Size:186K  inchange semiconductor
2sc4231.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4231DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

 9.99. Size:177K  inchange semiconductor
2sc4252.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4252DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2.1 GHz TYP.TLow Output Capacitance-C = 1.1 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25

 9.100. Size:179K  inchange semiconductor
2sc4245.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4245DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2400MHz TYP. @V = 10 V, I = 2 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner , UHF mixer applicationsVHF~UHF band RF amplifier applicationsABSOLUTE MAXIMUM R

 9.101. Size:167K  inchange semiconductor
2sc4261.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4261DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 25 VCBOV Collector-Emitter

 9.102. Size:861K  inchange semiconductor
2sc4226.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4226DESCRIPTIONLow Collector Curren -I = 0.1ACLow Collector PowerPc=0.1WWith SOT-323 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for broadband low noise amplifier ;wideband low noise amplifieABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 9.103. Size:184K  inchange semiconductor
2sc4233.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4233DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

 9.104. Size:179K  inchange semiconductor
2sc4246.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4246DESCRIPTIONHigh Current-Gain Bandwidth Productf = 1500MHz TYP. @V = 10 V, I = 8 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner , UHF oscillator applicationsTV tuner , UHF converter applicationsABSOLUTE MAXIM

 9.105. Size:178K  inchange semiconductor
2sc4251.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4251DESCRIPTIONHigh fT-f = 1100 MHz TYP.TLow Output Capacitance-C = 0.9 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 9.106. Size:167K  inchange semiconductor
2sc4262.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4262DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF~ VHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emi

 9.107. Size:191K  inchange semiconductor
2sc4296.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4296DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

 9.108. Size:184K  inchange semiconductor
2sc4234.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4234DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

 9.109. Size:220K  inchange semiconductor
2sc4260.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V

 9.110. Size:188K  inchange semiconductor
2sc4293.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4293DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLU

 9.111. Size:188K  inchange semiconductor
2sc4236.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4236DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

 9.112. Size:207K  inchange semiconductor
2sc4227.pdf

2SC4289A 2SC4289A

isc Silicon NPN RF Transistor 2SC4227DESCRIPTIONLow NoiseNF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHzCE CHigh GainS 2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz21e CE C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF, UHF low noise amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)

 9.113. Size:190K  inchange semiconductor
2sc4297.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

 9.114. Size:174K  inchange semiconductor
2sc4242.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4242DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.8V(Max.)@ I = 4.0ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

 9.115. Size:185K  inchange semiconductor
2sc4273.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4273DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convert

 9.116. Size:195K  inchange semiconductor
2sc4250.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter

 9.117. Size:177K  inchange semiconductor
2sc4264.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4264DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~VHF RF amplifier, localoscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 V

 9.118. Size:191K  inchange semiconductor
2sc4299.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4299DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

 9.119. Size:126K  inchange semiconductor
2sc4278.pdf

2SC4289A 2SC4289A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolut

 9.120. Size:590K  inchange semiconductor
2sc4228.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4228DESCRIPTIONHigh fT8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHzCE CLow Cre0.3pF TYP., @V = 3 V, I = 0, f = 1 MHzCB EHigh S 221e7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHzCE C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

 9.121. Size:190K  inchange semiconductor
2sc4232.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4232DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

 9.122. Size:222K  inchange semiconductor
2sc4298.pdf

2SC4289A 2SC4289A

isc Silicon NPN Power Transistor 2SC4298DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 9.123. Size:186K  inchange semiconductor
2sc4230.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4230DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RAT

 9.124. Size:216K  inchange semiconductor
2sc4275.pdf

2SC4289A 2SC4289A

isc Silicon NPN Power Transistor 2SC4275DESCRIPTIONLow saturation voltageHigh Switching SpeedHigh reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh speed DC-DC converter applicationsSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATIN

 9.125. Size:150K  inchange semiconductor
2sc4276.pdf

2SC4289A 2SC4289A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 m

 9.126. Size:188K  inchange semiconductor
2sc4294.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4294DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput

 9.127. Size:213K  inchange semiconductor
2sc4237.pdf

2SC4289A 2SC4289A

isc Silicon NPN Power Transistor 2SC4237DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV C

 9.128. Size:178K  inchange semiconductor
2sc4247.pdf

2SC4289A 2SC4289A

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4247DESCRIPTIONHigh Current-Gain Bandwidth Productf = 4 GHz TYP. @V = 10 V, I = 10 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner , UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
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