2SC4322 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4322 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

SMD Type Transistors NPN Transistors 2SC4322 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

2SC4324 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4324 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4325 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4325 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4320 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4320 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 15dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

2SC4321 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4321 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

SMD Type Transistors NPN Transistors 2SC4325 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 15

SMD Type Transistors NPN Transistors 2SC4321 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 40

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ (I = 5A, I = 0.3A) CE(sat) C B Complement to Type 2SA1643 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed