2SC4361
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4361
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250(typ)
MHz
Capacitancia de salida (Cc): 3.7
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SPA
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2SC4361
Datasheet (PDF)
8.2. Size:118K sanyo
2sc4364.pdf 
Ordering number:EN3008NPN Epitaxial Planar Silicon Transistor2SC4364VHF, UHF/MIX. OSC. Low-VoltageHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage operationunit:mm: fT=3.0GHz typ (VCE=3V)2018B: MAG=11dB typ (VCE=3V, IC=3mA)[2SC4364]: NF=3.0dB typ (VCE=3V, IC=3mA)0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : Col
8.3. Size:147K sanyo
2sc4365.pdf
Ordering number:EN3007NPN Epitaxial Planar Silicon Transistor2SC4365VHF, UHF/MIX. OSC. Low-VoltageHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage operationunit:mm: fT=3.0GHz typ (VCE=3V)2018B: MAG=12dB typ (VCE=3V, IC=10mA)[2SC4365]: NF=1.5dB typ (VCE=3V, IC=5mA)0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : Co
8.4. Size:29K hitachi
2sc4367.pdf
2SC4367Silicon NPN EpitaxialApplicationHigh Frequency amplifierOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC4367Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 100 mACollector peak current iC (peak) 200 mACollecto
8.5. Size:29K hitachi
2sc4366.pdf
2SC4366Silicon NPN EpitaxialApplicationLow Frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC4366Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 15 VCollector current IC 300 mACollector power dissipation PC 150 mWJunction temp
8.6. Size:149K jmnic
2sc4369.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4369 DESCRIPTION With TO-220F package Complement to type 2SA1658 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
8.7. Size:1223K kexin
2sc4364.pdf
SMD Type TransistorsNPN Transistors2SC4364SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
8.8. Size:1225K kexin
2sc4365.pdf
SMD Type TransistorsNPN Transistors2SC4365SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
8.9. Size:535K kexin
2sc4366.pdf
SMD Type TransistorsNPN Transistors2SC4366SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll
8.10. Size:183K inchange semiconductor
2sc4369.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4369DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)CEOGood Linearity of hFEComplement to Type 2SA1658100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =2
8.11. Size:183K inchange semiconductor
2sc4368.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4368DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 150V(Min)CEOComplement to Type 2SA1657Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV, monitor vertical output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
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.
History: 2N834-51
| BDX29-10
| 2SA1664
