2SC4361. Аналоги и основные параметры
Наименование производителя: 2SC4361
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.47
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 typ MHz
Ёмкость коллекторного перехода (Cc): 3.7 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: SPA
Аналоги (замена) для 2SC4361
- подборⓘ биполярного транзистора по параметрам
2SC4361 даташит
8.2. Size:118K sanyo
2sc4364.pdf 
Ordering number EN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions Low-voltage operation unit mm fT=3.0GHz typ (VCE=3V) 2018B MAG=11dB typ (VCE=3V, IC=3mA) [2SC4364] NF=3.0dB typ (VCE=3V, IC=3mA) 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Col
8.3. Size:147K sanyo
2sc4365.pdf 
Ordering number EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions Low-voltage operation unit mm fT=3.0GHz typ (VCE=3V) 2018B MAG=12dB typ (VCE=3V, IC=10mA) [2SC4365] NF=1.5dB typ (VCE=3V, IC=5mA) 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Co
8.4. Size:29K hitachi
2sc4367.pdf 
2SC4367 Silicon NPN Epitaxial Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 100 mA Collector peak current iC (peak) 200 mA Collecto
8.5. Size:29K hitachi
2sc4366.pdf 
2SC4366 Silicon NPN Epitaxial Application Low Frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 150 mW Junction temp
8.6. Size:149K jmnic
2sc4369.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC4369 DESCRIPTION With TO-220F package Complement to type 2SA1658 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
8.7. Size:1223K kexin
2sc4364.pdf 
SMD Type Transistors NPN Transistors 2SC4364 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
8.8. Size:1225K kexin
2sc4365.pdf 
SMD Type Transistors NPN Transistors 2SC4365 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
8.9. Size:535K kexin
2sc4366.pdf 
SMD Type Transistors NPN Transistors 2SC4366 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll
8.10. Size:183K inchange semiconductor
2sc4369.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4369 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) CEO Good Linearity of h FE Complement to Type 2SA1658 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =2
8.11. Size:183K inchange semiconductor
2sc4368.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4368 DESCRIPTION Collector-Emitter Breakdown Voltage V = 150V(Min) CEO Complement to Type 2SA1657 Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
Другие транзисторы: 2SC4354, 2SC4355, 2SC4356, 2SC4357, 2SC4358, 2SC4359, 2SC436, 2SC4360, 2N3904, 2SC4362, 2SC4363, 2SC4364, 2SC4365, 2SC4366, 2SC4367, 2SC4368, 2SC4369
