2SC4438 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4438DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI

Ordering number : ENN3184A2SC4432NPN Epitaxial Planar Silicon Transistor2SC4432High-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions High power gain.unit : mm High cutoff frequency.2018B Small Cob, Cre.[2SC4432] Ultrasmall-sized package permitting the 2SC4432-applied sets to be made small and slim.0.40.1630 to 0.11 0.9

Ordering number:EN3791NPN Triple Diffused Planar Silicon Transistor2SC4435Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast switching speed (tf=300ns max).unit:mm High brocking voltage (VCBO=1500V).2022A High reliability (Adoption of HVP process).[2SC4435] Adoption of MBIT process.15.63.24.814.

Ordering number:EN3553NPN Epitaxial Planar Silicon Transistor2SC4433HF Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=28dB typ (f=100MHz).unit:mm High cutoff frequency : fT=750MHz typ.2033A Small Cob, Cre.[2SC4433]2.24.00.40.50.40.41 2 31 : Emitter1.3 1.32 : Collector3 : Base3.03.8SANYO : SPASpecificationsAbsol

Ordering number:EN2853NPN Triple Diffused Planar Silicon Transistor2SC4430800V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4430] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN3792NPN Triple Diffused Planar Silicon Transistor2SC4437Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=0.3ns max).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC4437] Adoption of MBIT process.16.05.63.43.12.82.

2SC4434Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator, Lighting Inverter, and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit0.24.80.415.60.19.6 2.0VCBO 500 V I

SMD Type TransistorsNPN Transistors2SC4432SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High power gain. High cutoff frequency.1 2 Complementary to 2SA1815+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto

isc Silicon NPN Power Transistor 2SC4434DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter, andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4430DESCRIPTIONNPN triple diffused planar silicon transistorHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4437DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25