2SC4438 Specs and Replacement
Type Designator: 2SC4438
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
2SC4438 datasheet
..2. Size:189K inchange semiconductor
2sc4438.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4438 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI... See More ⇒
8.2. Size:23K sanyo
2sc4432.pdf 

Ordering number ENN3184A 2SC4432 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain. unit mm High cutoff frequency. 2018B Small Cob, Cre. [2SC4432] Ultrasmall-sized package permitting the 2SC4432- applied sets to be made small and slim. 0.4 0.16 3 0 to 0.1 1 0.9... See More ⇒
8.3. Size:92K sanyo
2sc4435.pdf 

Ordering number EN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed (tf=300ns max). unit mm High brocking voltage (VCBO=1500V). 2022A High reliability (Adoption of HVP process). [2SC4435] Adoption of MBIT process. 15.6 3.2 4.8 14.... See More ⇒
8.4. Size:71K sanyo
2sc4433.pdf 

Ordering number EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions High power gain PG=28dB typ (f=100MHz). unit mm High cutoff frequency fT=750MHz typ. 2033A Small Cob, Cre. [2SC4433] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Emitter 1.3 1.3 2 Collector 3 Base 3.0 3.8 SANYO SPA Specifications Absol... See More ⇒
8.5. Size:107K sanyo
2sc4430.pdf 

Ordering number EN2853 NPN Triple Diffused Planar Silicon Transistor 2SC4430 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4430] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 ... See More ⇒
8.6. Size:91K sanyo
2sc4437.pdf 

Ordering number EN3792 NPN Triple Diffused Planar Silicon Transistor 2SC4437 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4437] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.... See More ⇒
8.7. Size:25K sanken-ele
2sc4434.pdf 

2SC4434 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator, Lighting Inverter, and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V I... See More ⇒
8.8. Size:917K kexin
2sc4432.pdf 

SMD Type Transistors NPN Transistors 2SC4432 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High power gain. High cutoff frequency. 1 2 Complementary to 2SA1815 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto... See More ⇒
8.9. Size:212K inchange semiconductor
2sc4434.pdf 

isc Silicon NPN Power Transistor 2SC4434 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter, and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
8.10. Size:182K inchange semiconductor
2sc4430.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4430 DESCRIPTION NPN triple diffused planar silicon transistor High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.11. Size:189K inchange semiconductor
2sc4437.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4437 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
Detailed specifications: 2SC4433, 2SC4433D, 2SC4433E, 2SC4433F, 2SC4434, 2SC4435, 2SC4436, 2SC4437, A42, 2SC4439, 2SC444, 2SC4440, 2SC4441, 2SC4442, 2SC4443, 2SC4444, 2SC4446
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