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2SC4467 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4467
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 120 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO218
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2SC4467 Datasheet (PDF)

 ..1. Size:169K  utc
2sc4467.pdf pdf_icon

2SC4467

UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an

 ..2. Size:192K  jmnic
2sc4467.pdf pdf_icon

2SC4467

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV

 ..3. Size:24K  sanken-ele
2sc4467.pdf pdf_icon

2SC4467

2SC4467Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit0.24.80.415.60.1VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0IEBOVCEO 120 V VEB=6V 10max

 ..4. Size:194K  inchange semiconductor
2sc4467.pdf pdf_icon

2SC4467

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4467DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1694100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MA

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NB213EH | 40319V1

 

 
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