2SC4478 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4478 DESCRIPTION Fast switching speed NPN epitaxial planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High deflection CRT display Horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

Ordering number EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1697/2SC4474] Features High fT fT=300MHz. High breakdown voltage VCEO=200V min. Small reverse transfer capacitan

Ordering number EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1696/2SC4473] Features High fT fT=500MHz. High breakdown voltage VCEO=120V min. Small reverse transfer capacitan

Ordering number EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions High voltage amplifier. unit mm High voltage switching. 2010C Dynamic focus. [2SC4475] 10.2 4.5 3.6 5.1 1.3 Features High breakdown voltage (VCEO min=1800V). Small Cob (Cob typ=1.

Ordering number EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions High voltage amplifier. unit mm High voltage switching. 2010C Dynamic focus. [2SC4476] 10.2 4.5 3.6 5.1 1.3 Features High breakdown voltage (VCEO min=1800V). Small Cob (Cob typ=1