2SC45 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4540 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (I = 500 mA) C High speed switching time: t = 0.4 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1735 Ma

2SC4527 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4527 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Exchange of emitter for base in 2SC4246. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollect

2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) High speed switching time: t = 0.3 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 Ma

2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High speed switching time: t = 0.5 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1736 Max

Ordering number:EN3144NPN Triple Diffused Planar Silicon Transistor2SC4598Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4598]cesses for 2SC4598-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN3712NPN Planar Silicon Darlington Transistor2SC454785V/3A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC4169]10.24.5Features3.65.11.3 High DC current gain. Large current capacity and Wide ASO. Contains Zener diode of

Ordering number:EN3643PNP/NPN Epitaxial Planar Silicon Transistors2SA1749/2SC4564High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 200V min.2042A High current.[2SA1749/2SC4564] Small reverse transfer capacitance and excellent highfrequnecy chacateristics :Cre=

Ordering number:EN3242NPN Triple Diffused Planar Silicon Transistor2SC4578900V/50mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4578] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.55EIA

Ordering number:EN3188PNP Epitaxial Planar Silicon TransistorNPN Triple Diffuesd Planar Silicon Transistor2SA1740/2SC4548High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown votlage.unit:mm Adoption of MBIT process.2038 Excellent hFE linearlity.[2SA1740/2SC4548]E : EmitterC : CollectorB : Base( ) : 2SA1740SANYO : PCP(Bottom view)

Ordering number:EN3142ANPN Epitaxial Planar Silicon Transistors2SC4523High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter

Ordering number:EN3145NPN Triple Diffused Planar Silicon Transistor2SC4599Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4599]cesses for 2SC4599-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN4728PNP Epitaxial Planar Silicon Transistor2SC4563Ultrahigh-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=1.2GHz typ.unit:mm High breakdown voltage : VCEO 80V.2010C High current : IC=500mA.[2SC4411] Small reverse transfer capacitance : Cre=3.8pF10.24.53.65.1(VCB=30V). 1.3 Adoption o

Ordering number:EN3160ANPN Epitaxial Planar Silicon Transistor2SC4504High-Definition CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=2.2GHz typ)unit:mm Large current (IC=300mA)2038A Adoption of FBET process.[2SC4504]4.51.51.60.4 0.53 2 10.41.53.01 : Base2 : Collector0.753 : EmitterSANYO : PCP(Bottom vi

Ordering number:EN3141ANPN Epitaxial Planar Silicon Transistors2SC4522High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter

Ordering number:EN3252ANPN Triple Diffused Planar Silicon Transistor2SC4572800V/20mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C High reliability (Adoption of HVP process).[2SC4572]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.55EIAJ : SC-46Spe

Ordering number:EN3138NPN Epitaxial Planar Silicon Transistors2SC4519High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Low collector-to-emitter saturation voltage.2018A Fast switching speed.[2SC4519] Small-sized package.0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : CollectorSANYO : CP

Ordering number:EN3140ANPN Epitaxial Planar Silicon Transistors2SC4521High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4521] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.75

Ordering number:EN3187PNP/NPN Epitaxial Planar Silicon Transistor2SA1745/2SC4555Low-Frequency General-PurposeAmplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1745/unit:mm2SC4555-applied set to be made small and slim.2059 Low collector-to-emitter saturation voltage.[2SA1745/2SC4555]B : BaseC : CollectorE : Emitter( )

Ordering number:EN3143NPN Triple Diffused Planar Silicon Transistor2SC4597Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4597]cesses for 2SC4597-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN3243NPN Triple Diffused Planar Silicon Transistor2SC4579900V/20mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4579] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.55EIA

Ordering number:EN3139NPN Epitaxial Planar Silicon Transistors2SC4520High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4520] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.752

DATA SHEETSILICON POWER TRANSISTOR2SC4552NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontribu

DATA SHEETSILICON POWER TRANSISTOR2SC4550NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontribu

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4568NPN SILICON EPITAXIAL TRANSISTORUHF TV TUNER OSC/MIXERDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4568 is an NPN silicon epitaxial transistor intended for use as(Units: mm)UHF oscillator and UHF mixer in a tuner of TV receiver.2.80.21.50.65+0.1-0.15FEATURES High gain bandwidth productfT = 5.5 GHz TYP.2 Low output

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4571NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4571 is a low supply voltage transistor designed for UHF(Units: mm)OSC/MIX.2.10.1It is suitable for a high density surface mount assembly since the1.250.1transistor has been applied super mini mold package.FEATURES2 High fT : 5.

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4569UHF TV TUNER OSC/MIXERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4569 is an NPN silicon epitaxial transistro intended for use as(Units: mm)UHF oscillator and UHF mixer in a tuner of TV receiver.2.80.21.50.65+0.1-0.15FEATURES High gain bandwidty productfT = 5.0 GHz TYP.2 Low output

DATA SHEETSILICON POWER TRANSISTOR2SC4554NPN SILICON EPITAXIAL TRANSISTORFOR SWITCHINGThe 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and features large current switching at alow power dissipation.In addition, a high hFE enables alleviation of the driver load.FEATURES High hFE and low VCE(sat):hFE

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4570NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4570 is a low supply voltage transistor designed for UHF(Units: mm)OSC/MIX.2.10.1It is suitable for a high density surface mount assembly since the1.250.1transistor has been applied super mini mold package.FEATURES2 High fT : 5.

DATA SHEETSILICON POWER TRANSISTOR2SC4551NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontribu

DATA SHEETSILICON POWER TRANSISTOR2SC4553NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and features large current switching at alow power dissipation. In addition, a high hFE enables alleviation ofthe driver load.FEATURES High hFE and low VCE(sat)

DATA SHEETNPN SILICON RF TRANSISTOR2SC4536NPN EPITAXIAL SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW-NOISE AMPLIFICATION3-PIN POWER MINIMOLDDESCRIPTIONThe 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It featuresexcellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, itemploys p

2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305

MCC2SC4548-DTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4548-ECA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed.Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level

MCC2SC4548-DTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4548-ECA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed.Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level

Power Transistors2SC4545Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm7.50.2 4.50.2 Features Allowing supply with the radial taping0.650.1 0.850.10.8 C 0.8 C1.00.10.70.10.70.1 Absolute Maximum Ratings Ta = 25C1.150.21.150.2Parameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 50 V0.

Transistor2SC4543Silicon NPN epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Wide current range.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.15Parameter Symbol Ratings Unit3 2 1Collector to base voltage VCBO 110

Transistor2SC4562Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17482.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

Transistor2SC4562Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17482.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

Power Transistors2SC4533Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating

Power Transistors2SC4559Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh collector to emitter VCEO 3.1 0.1High-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute Maximum Ratings (TC=25C)+0.20.5

Transistor2SC4502Silicon NPN epitaxial planer typeFor mtermediate frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh transition frequency fT.Large collector power dissipation PC. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C)0.450.052.5 0.5 2.5 0.5Parameter Symbol Rating

Transistor2SC4543Silicon NPN epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Wide current range.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.15Parameter Symbol Ratings Unit3 2 1Collector to base voltage VCBO 110

UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R SOT-89 B C E Tape ReelNote: Pin Assignment: E: EMITTER C: COLLECTOR B: BASE www.un

FUJI POWER TRANSISTOR2SC4538RTRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsJEDEC (TO-3PF)High frewuency inverters EIAJ -General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2

2SC4501(L)/(S)Silicon NPN EpitaxialApplicationHigh gain amplifier and medium speed switchingOutlineDPAK42, 441121. Base 3 2. Collector 3. Emitter S Type 124. Collector33L Type2SC4501(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base volta

2SC4593Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4593Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 100 mWJunction

2SC4529Silicon NPN EpitaxialVHF Wide Band AmplifierAbsolute Maximum Ratings (Ta = 25C)TO-126 MODItem Symbol Rating UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 V

2SC4500(L)/(S)Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineDPAK42, 441121. Base3 2. Collector3. EmitterS Type 124. Collector33L Type2SC4500(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector curr

2SC4537Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4537Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 100 mWJunction

2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit

2SC4591Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC4591Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 150 mWJunction

2SC4592Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4592Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC

2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO

2SC454Silicon NPN EpitaxialApplicationHigh frequency amplifier, mixerOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC454Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 200 mWJunc

2SC4548 0.2A , 400V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Small Flat Package High Breakdown Voltage 12 Excellent hFE Linearity 3B C AE ECCLASSIFICATION OF hFE B DProduct-Rank 2SC4548-D 2SC4548-E F GH KRange 60~120 100~200 J LM

2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTORGENERAL DESCRIPTIONHigh frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and generalpurposeTO-220FQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 100 VCollector-emitter voltage (open base)VCEO - 60 VCollector current (DC)I

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4548 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 V VCEO Collector-Emit

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4510 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbo

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator ;lighting inverter and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4512 DESCRIPTION With TO-220C package Complement to type 2SA1726 APPLICATIONS Audio and General Purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4508 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER C

JMnic Silicon NPN Power Transistors 2SC4509 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolu

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4533 DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4531 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratin

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute m

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4507 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum rating

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator ;lighting inverter and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4511 DESCRIPTION With TO-220F package Complement to type 2SA1725 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER C

2SC4518/4518ASilicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator, Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions FM20(TO220F)Symbol 2SC4518 2SC4518A Unit Symbol Conditions 2SC4518 2SC4518A Unit0.24.20.210.1c0.52.8VCBO 900

2SC4512Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-25(TO220)Symbol 2SC4512 Symbol Conditions 2SC4512 UnitUnit0.24.80.210.2VCBO 120 ICBO VCB=120V 10max A 2.00.1VVCEO 80 IEBO VEB=6V 10max AV

2SC4517/4517ASilicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions FM20(TO220F)Symbol 2SC4517 2SC4517A Unit Symbol Conditions 2SC4517 2SC4517AUnit0.24.20.210.1c0.52.8900 1000 100max AVCBO

2SC4546Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor)Application : Switching Regulator, Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4546 Unit Symbol Conditions 2SC4546 Unit0.24.20.210.1c0.52.8VCBO 600 V IC

2SC4557Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4557 Symbol Conditions 2SC4557 UnitUnit0.20.2 5.515.60.23.45VCBO 900 ICBO VCB=800V 100max AVVCEO 550 IE

2SC4511Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725)Application : Audio and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC4511 Unit Conditions 2SC4511Unit0.24.20.210.1c0.52.8ICBOVCBO 120 V VCB=120V 10max AIEBOVCEO 80 V VEB=6V 10max

SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4580 Case : ITO-3P Unit : mm(TP8W45FX)8A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltage

SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4583 Case : ITO-3P Unit : mm(TP3W80HFX)3A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect

SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4581 Case : ITO-3P Unit : mm(TP10W45FX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag

SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4582 Case : ITO-3P Unit : mm(TP15W45FX)15A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag

SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4584 Case : ITO-3P Unit : mm(TP6W80HFX)6A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect

SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4585 Case : ITO-3P Unit : mm(TP10W80HFX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VColle

2SC4548 SOT-89-3L TRANSISTOR(NPN)1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Pow

2SC4544(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High voltage: V (BR) CEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V Dimensions in inches an

2SC4548NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89ABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otherwise Noted)Rating Symbol Value UnitVCBO400 VCollector to Base VoltageVCEO400 VCollector to Emitter VoltageVVEBO 5Emitter to Base VoltageICCollector Current (DC) 200 mAPD500 mWTotal Device Disspation TA=25C

ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 ABase0.5 Ptot W Total Power Dissipation1 1) Junction Te

SMD Type TransistorsNPN Transistors2SC4505SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Complements to 2SA17591.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 4

SMD Type TransistorsNPN Transistors2SC45401.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA17351.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SC4543SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 110 Collector - Emitter voltage VCER 100REB = 1.2KV Collect

SMD Type TransistorsNPN Transistors2SC4568SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=12V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type TransistorsNPN Transistors2SC45391.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA17431.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SC4562 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SA17481 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector C

SMD Type TransistorsNPN Transistors2SC4577SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=15V+0.050.95+0.1-0.1 0.1 -0.01 Complement to 2SA17531.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

SMD Type TransistorsNPN Transistors2SC4548SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=400V Complementary to 2SA17400.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO

SMD Type TransistorsNPN Transistors2SC4504SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC4569SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=60mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type TransistorsNPN Transistors2SC4519SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=45V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll

SMD Type TransistorsNPN Transistors2SC4591SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=9V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

SMD Type TransistorsNPN Transistors2SC4521SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SC4555 Features Low collector-to-emitter saturation voltage. Complementary to 2SA17451 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA

SMD Type TransistorsNPN Transistors2SC45411.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA17361.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SC4536SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.25A Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage V

2SC4552T2TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V, I = 3A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BAPPLICATIONSDesigned for use as a driver in DC/DC converters andactuators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

SPTECH Product Specificationisc Silicon NPN Power Transistor 2SC4550DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V , I = 1.5A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 4A, I = 0.2A)CE(sat) C BAPPLICATIONSDesigned for use as a driver in DC/DC converters andactuators.ABSOLUTE MAXIMU

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4552DESCRIPTION With TO-220F package High hFE and low VCE(sat) APPLICATIONS For high-speed switching For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4510DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC conver

isc Silicon NPN Power Transistor 2SC4552DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V, I = 3A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 8A, I = 0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a drive

isc Silicon NPN Power Transistor 2SC4550DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V , I = 1.5A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 4A, I = 0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a dr

isc Silicon NPN Power Transistor 2SC4544DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOSmall Collector Ouptut CapacitanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching and amplifier applications.Color TV horizontal driver applications.Color TV chroma output applications.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4573DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsAB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4518DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4512DESCRIPTIONLow Collector Saturation Voltage:V = 0.5(V)(Max)@I = 2ACE(sat) CHigh Switching SpeedComplement to Type 2SA1726100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4580DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4508DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon NPN Darlington Power Transistor 2SC4574DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4517DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4583DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4509DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC conver

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4537DESCRIPTIONLow NoiseNF = 1.6 dB TYP., @V = 5 V, I = 5 mA, f = 900 MHzCE CHigh Power GainPG = 10 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF, UHF low noise amplifier.ABSO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4533DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4589DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4531DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow saturation voltageBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4571DESCRIPTIONHigh Current-GainBandwidth Productf = 5.0 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHzT CE CLow COB0.9pF TYP. @V = 5 V, I = 0, f = 1.0 MHzCB E100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF oscillator

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4549DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V , I = 1A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 3A, I = 0.15A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable ope

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4581DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4538RDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency inverters

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4595DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 2V, I = 2A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 6A, I = 0.3A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4591DESCRIPTIONHigh Current-Gain Bandwidth Productf = 9.0GHz TYP. @V = 5 V, I = 20 mAT CE CLow NoiseNF = 1.2 dB TYP. @V = 5 V, I = 5 mA, f = 900 MHzCE CHigh Power GainPG = 12.5 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4570DESCRIPTIONHigh Current-GainBandwidth Productf = 5.5 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHzT CE CLow COB0.7pF TYP. @V = 5 V, I = 0, f = 1.0 MHzCB E100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF oscillator

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4507DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 2SC4582DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBO

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION With TO-3PML package High voltage,high speed Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4546DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter andgeneral purpose applications.ABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4518ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4557DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4559DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4511DESCRIPTIONLow Collector Saturation Voltage:V = 0.5(V)(Max)@I = 2ACE(sat) CHigh Switching SpeedComplement to Type 2SA1725100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE M

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4536DESCRIPTIONLow NoiseNF = 1.5 dB TYP. @V = 10 V, I = 10 mA, f = 1 GHzCE CLow DistortionIM = 57.5 dB TYP. @V = 10 V, I = 50 mA2 CE CIM = 82 dB TYP. @V = 10 V, I = 50 mA3 CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator ;lighting inverter and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ra

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4585DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4596DESCRIPTIONLow Collector Saturation Voltage: V = 0.3V(Max)@ I = 3ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SA1757100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high sp