2SC45. Аналоги и основные параметры
Наименование производителя: 2SC45
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO39
Аналоги (замена) для 2SC45
- подборⓘ биполярного транзистора по параметрам
2SC45 даташит
2sc4515.pdf
/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o
2sc4516.pdf
/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o
2sc4540.pdf
2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4540 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I = 500 mA) C High speed switching time t = 0.4 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1735 Ma
2sc4527.pdf
2SC4527 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4527 TV Tuner, UHF Oscillator Applications (common base) Unit mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Exchange of emitter for base in 2SC4246. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collect
2sc4539.pdf
2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I C = 700 mA) High speed switching time t = 0.3 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 Ma
2sc4541.pdf
2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I C = 1.5 A) High speed switching time t = 0.5 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1736 Max
2sc4598.pdf
Ordering number EN3144 NPN Triple Diffused Planar Silicon Transistor 2SC4598 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4598] cesses for 2SC4598-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC
2sc4547.pdf
Ordering number EN3712 NPN Planar Silicon Darlington Transistor 2SC4547 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC4169] 10.2 4.5 Features 3.6 5.1 1.3 High DC current gain. Large current capacity and Wide ASO. Contains Zener diode of
2sa1749 2sc4564.pdf
Ordering number EN3643 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1749/2SC4564 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 200V min. 2042A High current. [2SA1749/2SC4564] Small reverse transfer capacitance and excellent high frequnecy chacateristics Cre=
2sc4578.pdf
Ordering number EN3242 NPN Triple Diffused Planar Silicon Transistor 2SC4578 900V/50mA Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4578] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.55 EIA
2sc4548.pdf
Ordering number EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions High breakdown votlage. unit mm Adoption of MBIT process. 2038 Excellent hFE linearlity. [2SA1740/2SC4548] E Emitter C Collector B Base ( ) 2SA1740 SANYO PCP (Bottom view)
2sc4523.pdf
Ordering number EN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SC4522] Fast switching speed. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Base 0.6 0.5 2 Collector 3 Emitter
2sc4599.pdf
Ordering number EN3145 NPN Triple Diffused Planar Silicon Transistor 2SC4599 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4599] cesses for 2SC4599-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC
2sc4563.pdf
Ordering number EN4728 PNP Epitaxial Planar Silicon Transistor 2SC4563 Ultrahigh-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=1.2GHz typ. unit mm High breakdown voltage VCEO 80V. 2010C High current IC=500mA. [2SC4411] Small reverse transfer capacitance Cre=3.8pF 10.2 4.5 3.6 5.1 (VCB=30V). 1.3 Adoption o
2sc4504.pdf
Ordering number EN3160A NPN Epitaxial Planar Silicon Transistor 2SC4504 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions High fT (fT=2.2GHz typ) unit mm Large current (IC=300mA) 2038A Adoption of FBET process. [2SC4504] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 2 Collector 0.75 3 Emitter SANYO PCP (Bottom vi
2sc4522.pdf
Ordering number EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SC4522] Fast switching speed. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Base 0.6 0.5 2 Collector 3 Emitter
2sc4572.pdf
Ordering number EN3252A NPN Triple Diffused Planar Silicon Transistor 2SC4572 800V/20mA Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C High reliability (Adoption of HVP process). [2SC4572] 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.55 EIAJ SC-46 Spe
2sc4519.pdf
Ordering number EN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features Package Dimensions Adoption of FBET process. unit mm Low collector-to-emitter saturation voltage. 2018A Fast switching speed. [2SC4519] Small-sized package. 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collector SANYO CP
2sc4521.pdf
Ordering number EN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SC4521] Fast switching speed. 4.5 1.5 Small-sized package. 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75
2sc4555.pdf
Ordering number EN3187 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1745/2SC4555 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1745/ unit mm 2SC4555-applied set to be made small and slim. 2059 Low collector-to-emitter saturation voltage. [2SA1745/2SC4555] B Base C Collector E Emitter ( )
2sc4597.pdf
Ordering number EN3143 NPN Triple Diffused Planar Silicon Transistor 2SC4597 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4597] cesses for 2SC4597-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC
2sc4579.pdf
Ordering number EN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4579] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.55 EIA
2sc4520.pdf
Ordering number EN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SC4520] Fast switching speed. 4.5 1.5 Small-sized package. 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2
2sc4552.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu
2sc4550.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu
2sc4568.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS The 2SC4568 is an NPN silicon epitaxial transistor intended for use as (Units mm) UHF oscillator and UHF mixer in a tuner of TV receiver. 2.8 0.2 1.5 0.65+0.1 -0.15 FEATURES High gain bandwidth product fT = 5.5 GHz TYP. 2 Low output
2sc4571.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF (Units mm) OSC/MIX. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied super mini mold package. FEATURES 2 High fT 5.
2sc4569.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4569 UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4569 is an NPN silicon epitaxial transistro intended for use as (Units mm) UHF oscillator and UHF mixer in a tuner of TV receiver. 2.8 0.2 1.5 0.65+0.1 -0.15 FEATURES High gain bandwidty product fT = 5.0 GHz TYP. 2 Low output
2sc4554.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING (UNIT mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat) hFE
2sc4570.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4570 is a low supply voltage transistor designed for UHF (Units mm) OSC/MIX. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied super mini mold package. FEATURES 2 High fT 5.
2sc4551.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu
2sc4553.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES High hFE and low VCE(sat)
2sc4536.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs p
2sa1759 2sc4505 2sc4620.pdf
2SA1759 Transistors Transistors 2SC4505 / 2SC4620 (96-97-A324) (96-178-C300) 305
2sc4548-d.pdf
MCC 2SC4548-D TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4548-E CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed. Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level
2sc4548-e.pdf
MCC 2SC4548-D TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4548-E CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed. Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level
2sc4545.pdf
Power Transistors 2SC4545 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 7.5 0.2 4.5 0.2 Features Allowing supply with the radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 0.7 0.1 0.7 0.1 Absolute Maximum Ratings Ta = 25 C 1.15 0.2 1.15 0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V 0.
2sc4543.pdf
Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Wide current range. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO 110
2sc4562 e.pdf
Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1748 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute
2sc4562.pdf
Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1748 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute
2sc4533.pdf
Power Transistors 2SC4533 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th
2sc4502.pdf
Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Large collector power dissipation PC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Rating
2sc4559.pdf
Power Transistors 2SC4559 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25 C) +0.2 0.5
2sc4502 e.pdf
Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Large collector power dissipation PC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Rating
2sc4543 e.pdf
Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Wide current range. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO 110
2sc4548.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R SOT-89 B C E Tape Reel Note Pin Assignment E EMITTER C COLLECTOR B BASE www.un
2sc4538.pdf
FUJI POWER TRANSISTOR 2SC4538R TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators JEDEC (TO-3PF) High frewuency inverters EIAJ - General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings (Tc=2
2sc4501.pdf
2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 2, 4 4 1 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 3 L Type 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base volta
2sc4593.pdf
2SC4593 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4593 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction
2sc4529.pdf
2SC4529 Silicon NPN Epitaxial VHF Wide Band Amplifier Absolute Maximum Ratings (Ta = 25 C) TO-126 MOD Item Symbol Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V
2sc4500.pdf
2SC4500(L)/(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 2, 4 4 1 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 3 L Type 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector curr
2sc4537.pdf
2SC4537 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4537 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction
2sc2310 2sc458.pdf
2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emit
2sc4591.pdf
2SC4591 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4591 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction
2sc4592.pdf
2SC4592 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4592 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC
2sc458 2sc2308.pdf
2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO
2sc454.pdf
2SC454 Silicon NPN Epitaxial Application High frequency amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC454 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 200 mW Junc
2sc4548.pdf
2SC4548 0.2A , 400V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Small Flat Package High Breakdown Voltage 1 2 Excellent hFE Linearity 3 B C A E E C CLASSIFICATION OF hFE B D Product-Rank 2SC4548-D 2SC4548-E F G H K Range 60 120 100 200 J L M
2sc4596e.pdf
2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 60 V Collector current (DC) I
2sc4548.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4548 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emit
2sc4510.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4510 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbo
2sc4518.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator ;lighting inverter and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc4512.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4512 DESCRIPTION With TO-220C package Complement to type 2SA1726 APPLICATIONS Audio and General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1
2sc4508.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4508 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum rating
2sc4517.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER C
2sc4509.pdf
JMnic Silicon NPN Power Transistors 2SC4509 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolu
2sc4533.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4533 DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings
2sc4531.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4531 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratin
2sc4538.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute m
2sc4507.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4507 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum rating
2sc4518a.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator ;lighting inverter and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc4511.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4511 DESCRIPTION With TO-220F package Complement to type 2SA1725 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage
2sc4517a.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER C
2sc4518.pdf
2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator, Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4518 2SC4518A Unit Symbol Conditions 2SC4518 2SC4518A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900
2sc4512.pdf
2SC4512 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-25(TO220) Symbol 2SC4512 Symbol Conditions 2SC4512 Unit Unit 0.2 4.8 0.2 10.2 VCBO 120 ICBO VCB=120V 10max A 2.0 0.1 V VCEO 80 IEBO VEB=6V 10max A V
2sc4517.pdf
2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4517 2SC4517A Unit Symbol Conditions 2SC4517 2SC4517A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 900 1000 100max A VCBO
2sc4546.pdf
2SC4546 Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application Switching Regulator, Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4546 Unit Symbol Conditions 2SC4546 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 600 V IC
2sc4557.pdf
2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4557 Symbol Conditions 2SC4557 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IE
2sc4511.pdf
2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) Application Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC4511 Unit Conditions 2SC4511 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCBO 120 V VCB=120V 10max A IEBO VCEO 80 V VEB=6V 10max
2sc4580.pdf
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4580 Case ITO-3P Unit mm (TP8W45FX) 8A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage
2sc4583.pdf
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4583 Case ITO-3P Unit mm (TP3W80HFX) 3A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collect
2sc4581.pdf
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4581 Case ITO-3P Unit mm (TP10W45FX) 10A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltag
2sc4582.pdf
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4582 Case ITO-3P Unit mm (TP15W45FX) 15A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltag
2sc4584.pdf
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case ITO-3P Unit mm (TP6W80HFX) 6A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collect
2sc4585.pdf
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4585 Case ITO-3P Unit mm (TP10W80HFX) 10A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Colle
2sc4548.pdf
2SC4548 SOT-89-3L TRANSISTOR(NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Pow
2sc4544.pdf
2SC4544(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High voltage V (BR) CEO = 300 V Small collector output capacitance Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Dimensions in inches an
2sc4548.pdf
2SC4548 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(TA=25 C Unless Otherwise Noted) Rating Symbol Value Unit VCBO 400 V Collector to Base Voltage VCEO 400 V Collector to Emitter Voltage V VEBO 5 Emitter to Base Voltage IC Collector Current (DC) 200 mA PD 500 mW Total Device Disspation TA=25 C
st2sc4541u.pdf
ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 A Base 0.5 Ptot W Total Power Dissipation 1 1) Junction Te
2sc4505.pdf
SMD Type Transistors NPN Transistors 2SC4505 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Complements to 2SA1759 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 4
2sc4540.pdf
SMD Type Transistors NPN Transistors 2SC4540 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1735 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sc4543.pdf
SMD Type Transistors NPN Transistors 2SC4543 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 110 Collector - Emitter voltage VCER 100 REB = 1.2K V Collect
2sc4568.pdf
SMD Type Transistors NPN Transistors 2SC4568 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc4539.pdf
SMD Type Transistors NPN Transistors 2SC4539 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sc4562.pdf
SMD Type Transistors NPN Transistors 2SC4562 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SA1748 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector C
2sc4577.pdf
SMD Type Transistors NPN Transistors 2SC4577 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=15V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complement to 2SA1753 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B
2sc4548.pdf
SMD Type Transistors NPN Transistors 2SC4548 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=400V Complementary to 2SA1740 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO
2sc4504.pdf
SMD Type Transistors NPN Transistors 2SC4504 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE
2sc4569.pdf
SMD Type Transistors NPN Transistors 2SC4569 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=60mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc4519.pdf
SMD Type Transistors NPN Transistors 2SC4519 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=45V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll
2sc4591.pdf
SMD Type Transistors NPN Transistors 2SC4591 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc4521.pdf
SMD Type Transistors NPN Transistors 2SC4521 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO
2sc4555.pdf
SMD Type Transistors NPN Transistors 2SC4555 Features Low collector-to-emitter saturation voltage. Complementary to 2SA1745 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA
2sc4541.pdf
SMD Type Transistors NPN Transistors 2SC4541 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1736 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sc4536.pdf
SMD Type Transistors NPN Transistors 2SC4536 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.25A Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage V
2sc4552t2tl.pdf
2SC4552T2TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B APPLICATIONS Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
2sc4550m 2sc4550l 2sc4550k.pdf
SPTECH Product Specification isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1.5A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 4A, I = 0.2A) CE(sat) C B APPLICATIONS Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMU
2sc4552m 2sc4552l 2sc4552k.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4552 DESCRIPTION With TO-220F package High hFE and low VCE(sat) APPLICATIONS For high-speed switching For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc4510.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4510 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Switching Speed High Reliability Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC conver
2sc4552.pdf
isc Silicon NPN Power Transistor 2SC4552 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a drive
2sc4550.pdf
isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1.5A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 4A, I = 0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a dr
2sc4544.pdf
isc Silicon NPN Power Transistor 2SC4544 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Small Collector Ouptut Capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching and amplifier applications. Color TV horizontal driver applications. Color TV chroma output applications.
2sc4517 2sc4517a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc4573.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4573 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications AB
2sc4512.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4512 DESCRIPTION Low Collector Saturation Voltage V = 0.5(V)(Max)@I = 2A CE(sat) C High Switching Speed Complement to Type 2SA1726 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE M
2sc4580.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
2sc4508.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4508 DESCRIPTION Fast switching speed Silicon NPN planar diffused planar transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio temperature compensation and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
2sc4574.pdf
isc Silicon NPN Darlington Power Transistor 2SC4574 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch
2sc4583.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4583 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
2sc4509.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4509 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Switching Speed High Reliability Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC conver
2sc4537.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4537 DESCRIPTION Low Noise NF = 1.6 dB TYP., @V = 5 V, I = 5 mA, f = 900 MHz CE C High Power Gain PG = 10 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF, UHF low noise amplifier. ABSO
2sc4533.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4533 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RA
2sc4589.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4589 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25
2sc4531.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4531 DESCRIPTION High Breakdown Voltage High Switching Speed Low saturation voltage Built in damper diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
2sc4538.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3
2sc4571.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION High Current-Gain Bandwidth Product f = 5.0 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHz T CE C Low C OB 0.9pF TYP. @V = 5 V, I = 0, f = 1.0 MHz CB E 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF oscillator
2sc4549.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4549 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 3A, I = 0.15A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable ope
2sc4581.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4581 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
2sc4538r.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4538R DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters
2sc4595.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4595 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 2V, I = 2A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 6A, I = 0.3A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation AP
2sc4591.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4591 DESCRIPTION High Current-Gain Bandwidth Product f = 9.0GHz TYP. @V = 5 V, I = 20 mA T CE C Low Noise NF = 1.2 dB TYP. @V = 5 V, I = 5 mA, f = 900 MHz CE C High Power Gain PG = 12.5 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and
2sc4570.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION High Current-Gain Bandwidth Product f = 5.5 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHz T CE C Low C OB 0.7pF TYP. @V = 5 V, I = 0, f = 1.0 MHz CB E 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF oscillator
2sc4507.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4507 DESCRIPTION Fast switching speed Silicon NPN planar diffused planar transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio temperature compensation and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
2sc4582.pdf
isc Silicon NPN Power Transistor 2SC4582 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 600 V CBO
2sc4584.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION With TO-3PML package High voltage,high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag
2sc4546.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4546 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAX
2sc4518a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4518A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sc4557.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4557 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio
2sc4559.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4559 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PAR
2sc4542.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. A
2sc4511.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4511 DESCRIPTION Low Collector Saturation Voltage V = 0.5(V)(Max)@I = 2A CE(sat) C High Switching Speed Complement to Type 2SA1725 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE M
2sc4536.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION Low Noise NF = 1.5 dB TYP. @V = 10 V, I = 10 mA, f = 1 GHz CE C Low Distortion IM = 57.5 dB TYP. @V = 10 V, I = 50 mA 2 CE C IM = 82 dB TYP. @V = 10 V, I = 50 mA 3 CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for
2sc4518 2sc4518a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator ;lighting inverter and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ra
2sc4585.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4585 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
2sc4596.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION Low Collector Saturation Voltage V = 0.3V(Max)@ I = 3A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Complement to Type 2SA1757 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high sp
Другие транзисторы: 2SC4494, 2SC4495, 2SC4496, 2SC4497, 2SC4498, 2SC4499, 2SC4499L, 2SC4499S, 2SD2499, 2SC450, 2SC4500, 2SC4500L, 2SC4500S, 2SC4501, 2SC4501L, 2SC4501S, 2SC4502
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