2SC4529
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4529
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1500
MHz
Capacitancia de salida (Cc): 4.7
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO126
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2SC4529
Datasheet (PDF)
..1. Size:280K hitachi
2sc4529.pdf 
2SC4529Silicon NPN EpitaxialVHF Wide Band AmplifierAbsolute Maximum Ratings (Ta = 25C)TO-126 MODItem Symbol Rating UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 V
8.4. Size:309K toshiba
2sc4527.pdf
2SC4527 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4527 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Exchange of emitter for base in 2SC4246. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollect
8.5. Size:90K sanyo
2sc4523.pdf
Ordering number:EN3142ANPN Epitaxial Planar Silicon Transistors2SC4523High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter
8.6. Size:90K sanyo
2sc4522.pdf
Ordering number:EN3141ANPN Epitaxial Planar Silicon Transistors2SC4522High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SC4522] Fast switching speed.6.52.35.00.540.850.71.21 : Base0.60.52 : Collector3 : Emitter
8.7. Size:87K sanyo
2sc4521.pdf
Ordering number:EN3140ANPN Epitaxial Planar Silicon Transistors2SC4521High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4521] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.75
8.8. Size:93K sanyo
2sc4520.pdf
Ordering number:EN3139NPN Epitaxial Planar Silicon Transistors2SC4520High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT process.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SC4520] Fast switching speed.4.51.5 Small-sized package. 1.60.4 0.53 2 10.41.53.01 : Base0.752
8.9. Size:1159K kexin
2sc4521.pdf
SMD Type TransistorsNPN Transistors2SC4521SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO
Otros transistores... 2SC4520
, 2SC4521
, 2SC4522
, 2SC4523
, 2SC4524
, 2SC4525
, 2SC4526
, 2SC4527
, 13001-A
, 2SC453
, 2SC4531
, 2SC4532
, 2SC4533
, 2SC4537
, 2SC4539
, 2SC454
, 2SC4540
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