2SC4529. Аналоги и основные параметры
Наименование производителя: 2SC4529
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1500 MHz
Ёмкость коллекторного перехода (Cc): 4.7 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO126
Аналоги (замена) для 2SC4529
- подборⓘ биполярного транзистора по параметрам
2SC4529 даташит
..1. Size:280K hitachi
2sc4529.pdf 
2SC4529 Silicon NPN Epitaxial VHF Wide Band Amplifier Absolute Maximum Ratings (Ta = 25 C) TO-126 MOD Item Symbol Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V
8.4. Size:309K toshiba
2sc4527.pdf 
2SC4527 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4527 TV Tuner, UHF Oscillator Applications (common base) Unit mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Exchange of emitter for base in 2SC4246. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collect
8.5. Size:90K sanyo
2sc4523.pdf 
Ordering number EN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SC4522] Fast switching speed. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Base 0.6 0.5 2 Collector 3 Emitter
8.6. Size:90K sanyo
2sc4522.pdf 
Ordering number EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SC4522] Fast switching speed. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Base 0.6 0.5 2 Collector 3 Emitter
8.7. Size:87K sanyo
2sc4521.pdf 
Ordering number EN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SC4521] Fast switching speed. 4.5 1.5 Small-sized package. 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75
8.8. Size:93K sanyo
2sc4520.pdf 
Ordering number EN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SC4520] Fast switching speed. 4.5 1.5 Small-sized package. 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2
8.9. Size:1159K kexin
2sc4521.pdf 
SMD Type Transistors NPN Transistors 2SC4521 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO
Другие транзисторы: 2SC4520, 2SC4521, 2SC4522, 2SC4523, 2SC4524, 2SC4525, 2SC4526, 2SC4527, MPSA42, 2SC453, 2SC4531, 2SC4532, 2SC4533, 2SC4537, 2SC4539, 2SC454, 2SC4540
