2SC4582
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4582
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-base (Vcb): 600
V
Tensión colector-emisor (Vce): 450
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3PFM
Búsqueda de reemplazo de transistor bipolar 2SC4582
2SC4582
Datasheet (PDF)
..1. Size:446K shindengen
2sc4582.pdf
SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4582 Case : ITO-3P Unit : mm(TP15W45FX)15A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag
..2. Size:222K inchange semiconductor
2sc4582.pdf
isc Silicon NPN Power Transistor 2SC4582DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBO
8.2. Size:41K hitachi
2sc2310 2sc458.pdf
2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit
8.3. Size:27K hitachi
2sc458 2sc2308.pdf
2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO
8.4. Size:432K shindengen
2sc4580.pdf
SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4580 Case : ITO-3P Unit : mm(TP8W45FX)8A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltage
8.5. Size:438K shindengen
2sc4583.pdf
SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4583 Case : ITO-3P Unit : mm(TP3W80HFX)3A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect
8.6. Size:443K shindengen
2sc4581.pdf
SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4581 Case : ITO-3P Unit : mm(TP10W45FX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag
8.7. Size:441K shindengen
2sc4584.pdf
SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4584 Case : ITO-3P Unit : mm(TP6W80HFX)6A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect
8.8. Size:437K shindengen
2sc4585.pdf
SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4585 Case : ITO-3P Unit : mm(TP10W80HFX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VColle
8.9. Size:191K inchange semiconductor
2sc4580.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4580DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.10. Size:192K inchange semiconductor
2sc4583.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4583DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.11. Size:188K inchange semiconductor
2sc4589.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4589DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
8.12. Size:191K inchange semiconductor
2sc4581.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4581DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.13. Size:91K inchange semiconductor
2sc4584.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION With TO-3PML package High voltage,high speed Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag
8.14. Size:190K inchange semiconductor
2sc4585.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4585DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
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