2SC460 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC460, 2SC461Silicon NPN Epitaxial PlanarApplication 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixerOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC460, 2SC461Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC460 2SC461 UnitCollector to base voltage VCBO 30 30 VCollector to emitter voltage VCEO 30 30 VEmitter to base voltage VE

Ordering number:EN3146NPN Triple Diffused Planar Silicon Transistor2SC4600Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4600]cesses for 2SC4600-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN3147NPN Triple Diffused Planar Silicon Transistor2SC4601Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4601]cesses for 2SC4601-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN3148NPN Triple Diffused Planar Silicon Transistor2SC4602Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4602]cesses for 2SC4602-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al

Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al

FUJI POWER TRANSISTOR2SC4603RTRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsJEDEC (TO-3PF)High frewuency inverters EIAJ -General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4603RDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency inverters