2SC460 - описание и поиск аналогов

2SC460, 2SC461 Silicon NPN Epitaxial Planar Application 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC460 2SC461 Unit Collector to base voltage VCBO 30 30 V Collector to emitter voltage VCEO 30 30 V Emitter to base voltage VE

Ordering number EN3146 NPN Triple Diffused Planar Silicon Transistor 2SC4600 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4600] cesses for 2SC4600-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Ordering number EN3147 NPN Triple Diffused Planar Silicon Transistor 2SC4601 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4601] cesses for 2SC4601-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Ordering number EN3148 NPN Triple Diffused Planar Silicon Transistor 2SC4602 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4602] cesses for 2SC4602-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1762 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. M type package allowing easy automatic and manual insertion as 0.85 well as stand-al

Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1762 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. M type package allowing easy automatic and manual insertion as 0.85 well as stand-al

FUJI POWER TRANSISTOR 2SC4603R TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators JEDEC (TO-3PF) High frewuency inverters EIAJ - General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings (Tc=2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4603R DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters