2SC4604 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4604
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SC4604
2SC4604 Datasheet (PDF)
2sc4600.pdf
Ordering number:EN3146NPN Triple Diffused Planar Silicon Transistor2SC4600Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4600]cesses for 2SC4600-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC
2sc4601.pdf
Ordering number:EN3147NPN Triple Diffused Planar Silicon Transistor2SC4601Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4601]cesses for 2SC4601-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC
2sc4602.pdf
Ordering number:EN3148NPN Triple Diffused Planar Silicon Transistor2SC4602Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4602]cesses for 2SC4602-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC
2sc4606.pdf
Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al
2sc4606 e.pdf
Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al
2sc4603.pdf
FUJI POWER TRANSISTOR2SC4603RTRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsJEDEC (TO-3PF)High frewuency inverters EIAJ -General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
2sc460 2sc461.pdf
2SC460, 2SC461Silicon NPN Epitaxial PlanarApplication 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixerOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC460, 2SC461Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC460 2SC461 UnitCollector to base voltage VCBO 30 30 VCollector to emitter voltage VCEO 30 30 VEmitter to base voltage VE
2sc4603r.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4603RDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency inverters
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
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