2SC4604 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4604
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
2SC4604 Transistor Equivalent Substitute - Cross-Reference Search
2SC4604 Datasheet (PDF)
0.1. 2sc4604.pdf 
Size:190K _toshiba
8.1. 2sc4605.pdf Size:240K _toshiba
8.2. 2sc4602.pdf Size:118K _sanyo
Ordering number:EN3148NPN Triple Diffused Planar Silicon Transistor2SC4602Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4602]cesses for 2SC4602-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC
8.3. 2sc4600.pdf Size:115K _sanyo
Ordering number:EN3146NPN Triple Diffused Planar Silicon Transistor2SC4600Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4600]cesses for 2SC4600-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC
8.4. 2sc4601.pdf Size:114K _sanyo
Ordering number:EN3147NPN Triple Diffused Planar Silicon Transistor2SC4601Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4601]cesses for 2SC4601-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC
8.5. 2sc4606 e.pdf Size:52K _panasonic
Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al
8.6. 2sc4606.pdf Size:48K _panasonic
Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al
8.7. 2sc4603.pdf Size:185K _fuji
FUJI POWER TRANSISTOR2SC4603RTRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsJEDEC (TO-3PF)High frewuency inverters EIAJ -General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
8.8. 2sc460 2sc461.pdf Size:51K _hitachi
2SC460, 2SC461Silicon NPN Epitaxial PlanarApplication 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixerOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC460, 2SC461Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC460 2SC461 UnitCollector to base voltage VCBO 30 30 VCollector to emitter voltage VCEO 30 30 VEmitter to base voltage VE
8.9. 2sc4603r.pdf Size:190K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4603RDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency inverters
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
