2SC4626 Todos los transistores

 ..1. Size:55K  panasonic
 2sc4626 e.pdf

 ..2. Size:52K  panasonic
 2sc4626.pdf

 8.1. Size:127K  sanyo
 2sc4623.pdf

Ordering number EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 250V(min). 2042B High current. [2SA1777/2SC4623] Small reverse transfer capacitance and excellent high-frequnecy characteristic

 8.2. Size:129K  njs
 2sc4622.pdf

 8.3. Size:45K  rohm
 2sa1759 2sc4505 2sc4620.pdf

2SA1759 Transistors Transistors 2SC4505 / 2SC4620 (96-97-A324) (96-178-C300) 305

 8.4. Size:39K  panasonic
 2sc4627j e.pdf

Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. (Flat type) +0.05 0.85 0.03 Absolute Maximum Rati

 8.5. Size:60K  panasonic
 2sc4627 e.pdf

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati

 8.6. Size:57K  panasonic
 2sc4627.pdf

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati

 8.7. Size:23K  hitachi
 2sc4629.pdf

2SC4629 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4629 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junc

 8.8. Size:29K  hitachi
 2sc4628.pdf

2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 20 mA Collector power dissipation PC 200 mW Junction temp

 8.9. Size:184K  inchange semiconductor
 2sc4622.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators Solid st