2SC4626 Specs and Replacement
Type Designator: 2SC4626
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO236
- BJT ⓘ Cross-Reference Search
2SC4626 datasheet
8.1. Size:127K sanyo
2sc4623.pdf 
Ordering number EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 250V(min). 2042B High current. [2SA1777/2SC4623] Small reverse transfer capacitance and excellent high-frequnecy characteristic ... See More ⇒
8.4. Size:39K panasonic
2sc4627j e.pdf
Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. (Flat type) +0.05 0.85 0.03 Absolute Maximum Rati... See More ⇒
8.5. Size:60K panasonic
2sc4627 e.pdf
Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati... See More ⇒
8.6. Size:57K panasonic
2sc4627.pdf
Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati... See More ⇒
8.7. Size:23K hitachi
2sc4629.pdf
2SC4629 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4629 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junc... See More ⇒
8.8. Size:29K hitachi
2sc4628.pdf
2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 20 mA Collector power dissipation PC 200 mW Junction temp... See More ⇒
8.9. Size:184K inchange semiconductor
2sc4622.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators Solid st... See More ⇒
Detailed specifications: 2SC4601, 2SC4602, 2SC4604, 2SC4605, 2SC4608, 2SC461, 2SC462, 2SC4621, BC546, 2SC4627, 2SC4629, 2SC463, 2SC4630, 2SC4631, 2SC4632, 2SC4633, 2SC4634
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