2SC4659 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4659
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: X53
Búsqueda de reemplazo de transistor bipolar 2SC4659
2SC4659 Datasheet (PDF)
2sc4650.pdf
Ordering number:EN3581PNP/NPN Epitaxial Planar Silicon Transistors2SA1787/2SC4650High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2064frequency characteristic:[2SA1787/2SC4650]Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes
2sc4656 e.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
2sc4656.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
2sc4655.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
2sc4655 e.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
2sc4652.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4652DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ASY72 | NSBC123JPDXV6 | BF420S | BF420P3 | AUY35-4
History: ASY72 | NSBC123JPDXV6 | BF420S | BF420P3 | AUY35-4
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050