Биполярный транзистор 2SC4659 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4659
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 80 pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора: X53
2SC4659 Datasheet (PDF)
2sc4650.pdf
Ordering number:EN3581PNP/NPN Epitaxial Planar Silicon Transistors2SA1787/2SC4650High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2064frequency characteristic:[2SA1787/2SC4650]Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes
2sc4656 e.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
2sc4656.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
2sc4655.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
2sc4655 e.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
2sc4652.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4652DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050