2SC4710 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4710
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 2100 V
Tensión colector-emisor (Vce): 2100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6 MHz
Capacitancia de salida (Cc): 1.3 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220FI
Búsqueda de reemplazo de transistor bipolar 2SC4710
2SC4710 Datasheet (PDF)
2sc4710.pdf
Ordering number:EN3688ANPN Triple Diffused Planar Silicon Transistor2SC47102100V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=2100V).unit:mm Small Cob (typical Cob=1.3pF).2079B Wide ASO.[2SC4710] High reliability (Adoption of HVP process).4.510.02.8 Full isolation packag
2sc4710ls.pdf
Ordering number : ENN3688B2SC4710LSNPN Triple Diffused Planar Silicon Transistor2SC4710LS2100V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=2100V).unit : mm Small Cob(typical Cob=1.3pF).2079D Wide ASO.[2SC4710LS] High reliability(Adoption of HVP process).10.0 4.53.22.8
2sc4774 2sc4713k.pdf
2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC47741) Very low output-on resistance (Ron). 2) Low capacitance. 1.252.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 12 VCollector-emitter voltage VCEO 6 V0.1Min.Emitter-base voltage VEBO 3 VE
2sc4715 e.pdf
Transistor2SC4715Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage
2sc4715.pdf
Transistor2SC4715Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage
2sc4714.pdf
2SC4714 NPN Unit: mm10.5 0.54.5 0.29.5 0.21.4 0.18.0 0.2 VCEO Cob 3.7 0.1 (TC=25C)1.4 0.12.5 0.2 0.8
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 3DD162-S | 2SC4333 | H13005D
History: 3DD162-S | 2SC4333 | H13005D
Liste
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