2SC4738 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 120~700 Complementary to 2SA1832 Small package Absolute Maximu

2SC4738NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:High voltage and high current SOT-523(SC-75)Excellent hFE linearity High hFEComplementary to 2SA1832 MAXIMUM RATINGS (TA=25C unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Continuous IC

SMD Type TransistorsNPN Transistors2SC4738SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 High Voltage and Current High DC Current Gain Small Package3 Complementary to 2SA18320.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm High Voltage: VCEO = 50 V High Current: I = 150 mA (max) C High h : h = 120 to 400 FE FE Excellent h Linearity FE: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SA1832FT Maximum Rat

2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 120~400 FE: FE Complementary to 2SA1832F Small package Maximu

Ordering number:EN3974NPN Epitaxial Planar Silicon Transistor2SC473527MHz CB Transceiver Driver ApplicationsFeatures Package Dimensions Large power type such as PC=1.5W when usedunit:mmwithout heatsink.2084B It is possible to make appliances more compact[2SC4735]because its height on board is 9.5mm.4.51.9 2.6 Effective in automatic inserting and counting sto

Ordering number:ENN3880ANPN Epitaxial Planar Silicon Transistor2SC473750V/2A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2084B[2SC4737]4.5Features1.9 2.610.51.2 1.4 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between colle

Ordering number:EN3878PNP/NPN Epitaxial Planar Silicon Transistors2SA1826/2SC4730100V/3A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1826/2SC4730]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exc

Ordering number:ENN3879APNP/NPN Epitaxial Planar Silicon Transistors2SA1827/2SC4731100V/4A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applicaions.2084B[2SA1827/2SC4731]4.5Features1.9 2.610.51.2 1.4 Low collector-to-emitter saturation voltage. High G

Ordering number:EN3975NPN Epitaxial Planar Silicon Transistor2SC4736High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Large current (IC=2A).unit:mm Adoption of MBIT process.2084B High DC current gain (hFE=800 to 3200).[2SC4736] Low collector-to-emitter saturation voltage4.51.9 2.6(VCE(sat) 0.5V). 10.51.2 1.4

Ordering number:EN44092SA1830 : PNPEpitaxial Planar Silicon Transistor2SC4734 ; NPN Triple Diffused Planar Silicon Transistor2SA1830/2SC4734High-Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=2A).unit:mm High breakdown voltage (VCEO 400V).2084A Possible to offer the 2SA1830/2SC4734 devices in a[2SA1830/2SC4734]tape reel pack