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2SC474H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC474H
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 70 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2SC474H

 

2SC474H Datasheet (PDF)

 8.1. Size:32K  hitachi
2sc4747.pdf

2SC474H
2SC474H

2SC4747Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCBO = 1500 V High speed switchingtf 0.3 sOutlineTO-3PFM1. Base 2. Collector 3. Emitter1232SC4747Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1500 VCollector to emitter volta

 8.2. Size:378K  hitachi
2sc4744.pdf

2SC474H
2SC474H

 8.3. Size:299K  hitachi
2sc4745.pdf

2SC474H
2SC474H

2SC4745Silicon NPN Triple DiffusedCharacter Display Horizontal Deflection OutputFeatureTO-3PFM High speed switchingtf = 0.2 s typ High breakdown voltageVCBO = 1500 V Isolated package; TO-3PFMAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit1231. Base2. CollectorCollector to b

 8.4. Size:32K  hitachi
2sc4742.pdf

2SC474H
2SC474H

2SC4742Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCES = 1500 V Built-in damper diode typeOutlineTO-3P211. Base ID2. Collector (Flange) 3. Emitter13232SC4742Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCES 1500 VEmitter to

 8.5. Size:90K  jmnic
2sc4747.pdf

2SC474H
2SC474H

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER

 8.6. Size:107K  jmnic
2sc4742.pdf

2SC474H
2SC474H

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati

 8.7. Size:188K  inchange semiconductor
2sc4747.pdf

2SC474H
2SC474H

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4747DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.8. Size:221K  inchange semiconductor
2sc4744.pdf

2SC474H
2SC474H

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4744DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE

 8.9. Size:188K  inchange semiconductor
2sc4745.pdf

2SC474H
2SC474H

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4745DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.10. Size:188K  inchange semiconductor
2sc4746.pdf

2SC474H
2SC474H

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4746DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

 8.11. Size:187K  inchange semiconductor
2sc4743.pdf

2SC474H
2SC474H

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4743DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.12. Size:186K  inchange semiconductor
2sc4742.pdf

2SC474H
2SC474H

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4742DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CESBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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