2SC4766
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4766
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1700
V
Tensión colector-emisor (Vce): 600
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Capacitancia de salida (Cc): 70
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
ISOWATT218
Búsqueda de reemplazo de transistor bipolar 2SC4766
2SC4766
Datasheet (PDF)
..1. Size:192K inchange semiconductor
2sc4766.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4766DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.1. Size:100K sanyo
2sc4769.pdf
Ordering number:EN3665NPN Triple Diffused Planar Silicon Transistor2SC4769Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4769] Adoption of MBIT process.16.05.63.4 On-chip
8.2. Size:49K panasonic
2sc4767 e.pdf
Transistor2SC4767Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f=175MHz).0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.11.27 1.27Collector
8.3. Size:103K jmnic
2sc4764.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4764 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs
8.4. Size:106K jmnic
2sc4763.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4763 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs
8.5. Size:114K jmnic
2sc4762.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4762 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs
8.6. Size:119K jmnic
2sc4769.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4769 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P
8.7. Size:191K inchange semiconductor
2sc4761.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4761DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s
8.8. Size:192K inchange semiconductor
2sc4764.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4764DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.9. Size:192K inchange semiconductor
2sc4763.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4763DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.10. Size:192K inchange semiconductor
2sc4762.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4762DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.11. Size:191K inchange semiconductor
2sc4765.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4765DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.12. Size:196K inchange semiconductor
2sc4769.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4769DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
