Биполярный транзистор 2SC4766
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4766
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1700
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 6
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 1
MHz
Ёмкость коллекторного перехода (Cc): 70
pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора:
ISOWATT218
Аналоги (замена) для 2SC4766
2SC4766
Datasheet (PDF)
..1. Size:192K inchange semiconductor
2sc4766.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4766DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.1. Size:100K sanyo
2sc4769.pdf Ordering number:EN3665NPN Triple Diffused Planar Silicon Transistor2SC4769Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4769] Adoption of MBIT process.16.05.63.4 On-chip
8.2. Size:49K panasonic
2sc4767 e.pdf Transistor2SC4767Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f=175MHz).0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.11.27 1.27Collector
8.3. Size:103K jmnic
2sc4764.pdf Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4764 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs
8.4. Size:106K jmnic
2sc4763.pdf Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4763 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs
8.5. Size:114K jmnic
2sc4762.pdf Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4762 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs
8.6. Size:119K jmnic
2sc4769.pdf Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4769 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P
8.7. Size:191K inchange semiconductor
2sc4761.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4761DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s
8.8. Size:192K inchange semiconductor
2sc4764.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4764DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.9. Size:192K inchange semiconductor
2sc4763.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4763DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.10. Size:192K inchange semiconductor
2sc4762.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4762DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.11. Size:191K inchange semiconductor
2sc4765.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4765DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS
8.12. Size:196K inchange semiconductor
2sc4769.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4769DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection
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