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2SC4781 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4781

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 170 MHz

Empaquetado / Estuche: TO92

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2SC4781 Datasheet (PDF)

1.1. 2sc4781.pdf Size:120K _toshiba

2SC4781
2SC4781



4.1. 2sc4783.pdf Size:37K _nec

2SC4781
2SC4781

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 ± 0.05 0.1+0.1 –0.05 FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1

4.2. 2sc4787.pdf Size:40K _panasonic

2SC4781
2SC4781

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25˚C)

 4.3. 2sc4782.pdf Size:42K _panasonic

2SC4781
2SC4781

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Max

4.4. 2sc4787 e.pdf Size:44K _panasonic

2SC4781
2SC4781

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25˚C)

 4.5. 2sc4782 e.pdf Size:46K _panasonic

2SC4781
2SC4781

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Max

4.6. 2sc4784.pdf Size:69K _hitachi

2SC4781
2SC4781

2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4784 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Colle

4.7. 2sc4789.pdf Size:20K _hitachi

2SC4781
2SC4781

2SC4789 Silicon NPN Triple Diffused Application TO–3PL Character Display Horizontal Deflection Output Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A • Suitable for large size CRT Display 1. Base 2. Collector 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit —————

4.8. 2sc4782.pdf Size:938K _kexin

2SC4781
2SC4781

SMD Type Transistors NPN Transistors 2SC4782 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=200mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Coll

4.9. 2sc4789.pdf Size:186K _inchange_semiconductor

2SC4781
2SC4781

isc Product Specification isc Silicon NPN Power Transistor 2SC4789 DESCRIPTION ·Silicon NPN triple diffused ·High Switching Speed ·High Breakdown Voltage ·High speed switching time ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deffection output ·Suitable for large size CRT

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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