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2SC4781 Specs and Replacement

Type Designator: 2SC4781

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 170 MHz

Noise Figure, dB: -

Package: TO92

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2SC4781 datasheet

 ..1. Size:120K  toshiba

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2SC4781

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 8.1. Size:37K  nec

2sc4783.pdf pdf_icon

2SC4781

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain hFE2 = 200 TYP. High voltage VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1 ... See More ⇒

 8.2. Size:40K  panasonic

2sc4787.pdf pdf_icon

2SC4781

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) ... See More ⇒

 8.3. Size:44K  panasonic

2sc4787 e.pdf pdf_icon

2SC4781

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) ... See More ⇒

Detailed specifications: 2SC4761, 2SC4762, 2SC4763, 2SC4764, 2SC4765, 2SC4766, 2SC477, 2SC478, BD135, 2SC4789, 2SC479, 2SC4793, 2SC4796, 2SC4797, 2SC479H, 2SC48, 2SC480

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