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2SC4793 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4793
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 230 V
   Tensión colector-emisor (Vce): 230 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de transistor bipolar 2SC4793

 

2SC4793 Datasheet (PDF)

 ..1. Size:111K  toshiba
2sc4793.pdf

2SC4793 2SC4793

2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO

 ..2. Size:46K  utc
2sc4793.pdf

2SC4793 2SC4793

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number:2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T

 ..3. Size:38K  jmnic
2sc4793.pdf

2SC4793 2SC4793

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings

 ..4. Size:853K  jilin sino
2sc4793.pdf

2SC4793 2SC4793

NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEOCEO 2SA1837 Complementary to 2SA1937 High transition frequency :fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark

 ..5. Size:430K  kexin
2sc4793.pdf

2SC4793 2SC4793

DIP Type TransistorsTransistorsNPN Transistors2SC4793 FeaturesTO-220MF Units:mm High collector voltageVCEO=230V (min) Complementary to 2SA1837 High transition frequency :fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230V Collector - Emitter Voltage VCEO 230 Emitt

 ..6. Size:886K  jsmsemi
2sc4793.pdf

2SC4793 2SC4793

442SC4793 NPN 4 Silicon NPN Triple Diffused Transistor APPLICATIONS 4 Power Amplifier Applications FEATURES VCEO=230V (min) High collector voltageVCEO=230V (min) 2SA1837

 ..7. Size:706K  cn evvo
2sc4793.pdf

2SC4793 2SC4793

Silicon PNP transistorPower Amplifier Applications Complementary to 2SA1837 High collector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operatin

 ..8. Size:95K  cn minos
2sc4793.pdf

2SC4793 2SC4793

2SC4793Minos Silicon NPNTriple diffusionType2SC4793Power Amplifier ApplicationsComplementaryto 2SA1837Highcollector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis product todecrease inthereliability significantly even if the operating conditions

 ..9. Size:211K  inchange semiconductor
2sc4793.pdf

2SC4793 2SC4793

isc Silicon NPN Power Transistor 2SC4793DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SA1837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 0.1. Size:479K  blue-rocket-elect
2sc4793d.pdf

2SC4793 2SC4793

2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d

 0.2. Size:171K  nell
2sc4793af.pdf

2SC4793 2SC4793

RoHS RoHS 2SC4793AFSEMICONDUCTORNell High Power ProductsHigh Frequency NPN Power Transistor1A/230V/20WFEATURESHigh transition frequency:fT = 100MHz (typ.)Complementary to 2SA1837AFTO-220F package which can be BCEinstalled to the heat sink with one screwTO-220F APPLICATIONS(2SC4793AF)Power amplifierDriver stage amplifier (2)CB(1)NPNE(3)ABSOLUT

 8.1. Size:20K  hitachi
2sc4797.pdf

2SC4793 2SC4793

2SC4797Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

 8.2. Size:70K  hitachi
2sc4791.pdf

2SC4793 2SC4793

2SC4791Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ. High gain, low noise figurePG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4791Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage

 8.3. Size:20K  hitachi
2sc4796.pdf

2SC4793 2SC4793

2SC4796Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

 8.4. Size:55K  no
2sc4799.pdf

2SC4793 2SC4793

 8.5. Size:185K  inchange semiconductor
2sc4799.pdf

2SC4793 2SC4793

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4799DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsAB

 8.6. Size:188K  inchange semiconductor
2sc4796.pdf

2SC4793 2SC4793

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4796DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI

Otros transistores... 2SC4764 , 2SC4765 , 2SC4766 , 2SC477 , 2SC478 , 2SC4781 , 2SC4789 , 2SC479 , D882P , 2SC4796 , 2SC4797 , 2SC479H , 2SC48 , 2SC480 , 2SC4806 , 2SC481 , 2SC482 .

 

 
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