2SC4793 Todos los transistores

2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1 TO-220F *Pb-free plating product number 2SC4793L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC4793-x-TF3-T 2SC4793L-x-TF3-T T... See More ⇒

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings... See More ⇒

NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO 2SA1837 Complementary to 2SA1937 High transition frequency fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark... See More ⇒

DIP Type Transistors Transistors NPN Transistors 2SC4793 Features TO-220MF Units mm High collector voltage VCEO=230V (min) Complementary to 2SA1837 High transition frequency fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230 V Collector - Emitter Voltage VCEO 230 Emitt... See More ⇒

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Silicon PNP transistor Power Amplifier Applications Complementary to 2SA1837 High collector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin... See More ⇒

2SC4793 Minos Silicon NPNTriple diffusionType 2SC4793 Power Amplifier Applications Complementaryto 2SA1837 Highcollector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis product todecrease inthe reliability significantly even if the operating conditions ... See More ⇒

isc Silicon NPN Power Transistor 2SC4793 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO High Current-Gain Bandwidth Product Complement to Type 2SA1837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d... See More ⇒

RoHS RoHS 2SC4793AF SEMICONDUCTOR Nell High Power Products High Frequency NPN Power Transistor 1A/230V/20W FEATURES High transition frequency fT = 100MHz (typ.) Complementary to 2SA1837AF TO-220F package which can be B C E installed to the heat sink with one screw TO-220F APPLICATIONS (2SC4793AF) Power amplifier Driver stage amplifier (2) C B (1) NPN E(3) ABSOLUT... See More ⇒

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2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage ... See More ⇒

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4799 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications AB... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4796 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI... See More ⇒