2SC4793 Datasheet and Replacement

2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number:2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings

NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEOCEO 2SA1837 Complementary to 2SA1937 High transition frequency :fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark

DIP Type TransistorsTransistorsNPN Transistors2SC4793 FeaturesTO-220MF Units:mm High collector voltageVCEO=230V (min) Complementary to 2SA1837 High transition frequency :fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230V Collector - Emitter Voltage VCEO 230 Emitt

442SC4793 NPN 4 Silicon NPN Triple Diffused Transistor APPLICATIONS 4 Power Amplifier Applications FEATURES VCEO=230V (min) High collector voltageVCEO=230V (min) 2SA1837

Silicon PNP transistorPower Amplifier Applications Complementary to 2SA1837 High collector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operatin

2SC4793Minos Silicon NPNTriple diffusionType2SC4793Power Amplifier ApplicationsComplementaryto 2SA1837Highcollector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis product todecrease inthereliability significantly even if the operating conditions

isc Silicon NPN Power Transistor 2SC4793DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SA1837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d

RoHS RoHS 2SC4793AFSEMICONDUCTORNell High Power ProductsHigh Frequency NPN Power Transistor1A/230V/20WFEATURESHigh transition frequency:fT = 100MHz (typ.)Complementary to 2SA1837AFTO-220F package which can be BCEinstalled to the heat sink with one screwTO-220F APPLICATIONS(2SC4793AF)Power amplifierDriver stage amplifier (2)CB(1)NPNE(3)ABSOLUT

2SC4797Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC4791Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ. High gain, low noise figurePG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4791Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage

2SC4796Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4799DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsAB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4796DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI