2SC4793 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4793
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 230 V
Maximum Collector-Emitter Voltage |Vce|: 230 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: X34
2SC4793 Transistor Equivalent Substitute - Cross-Reference Search
2SC4793 Datasheet (PDF)
..1. 2sc4793.pdf 
Size:111K _toshiba
2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO
..2. 2sc4793.pdf Size:46K _utc
UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number:2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T
..3. 2sc4793.pdf Size:38K _jmnic
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings
..4. 2sc4793.pdf Size:430K _kexin
DIP Type TransistorsTransistorsNPN Transistors2SC4793 FeaturesTO-220MF Units:mm High collector voltageVCEO=230V (min) Complementary to 2SA1837 High transition frequency :fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230V Collector - Emitter Voltage VCEO 230 Emitt
..5. 2sc4793.pdf Size:211K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC4793DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SA1837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
0.1. 2sc4793d.pdf Size:479K _blue-rocket-elect
2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d
0.2. 2sc4793af.pdf Size:171K _nell
RoHS RoHS 2SC4793AFSEMICONDUCTORNell High Power ProductsHigh Frequency NPN Power Transistor1A/230V/20WFEATURESHigh transition frequency:fT = 100MHz (typ.)Complementary to 2SA1837AFTO-220F package which can be BCEinstalled to the heat sink with one screwTO-220F APPLICATIONS(2SC4793AF)Power amplifierDriver stage amplifier (2)CB(1)NPNE(3)ABSOLUT
8.1. 2sc4796.pdf Size:20K _hitachi
2SC4796Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit
8.2. 2sc4791.pdf Size:70K _hitachi
2SC4791Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ. High gain, low noise figurePG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4791Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage
8.3. 2sc4797.pdf Size:20K _hitachi
2SC4797Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit
8.4. 2sc4799.pdf Size:55K _no
8.5. 2sc4796.pdf Size:188K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4796DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI
8.6. 2sc4799.pdf Size:185K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4799DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsAB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
