2SC48 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC4839 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4839 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 15.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5

2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 8.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

Ordering number:EN4134NPN Epitaxial Planar Silicon Transistor2SC483620V/5A Switching ApplicationsApplications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm2084BFeatures [2SC4836]4.5 Large allowable collector dissipation.1.9 2.610.51.2 1.4 Low saturation voltage. Large current capacity. Fast switching speed. Usa

Ordering number:EN4581NPN Epitaxial Planar Silicon Transistor2SC4861UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High cutoff frequency : fT=6.5GHz typ.unit:mm2 High gain : S21e =11.5dB typ (f=1GHz).2018B Small Cob : NF=0.65pF typ.[2SC4861]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : CollectorSANYO

Ordering number : ENN5495A2SA1852 / 2SC4826PNP / NPN Epitaxial Planar Silicon Transistors2SA1852 / 2SC4826High Definition CRT DisplayVideo Output ApplicationsApplicationsPackage Dimensions High definition CRT display video output,unit : mmwide-band amplifer.2084B[2SA1852 / 2SC4826]Features 4.51.9 2.610.51.2 1.4 Adoption of FBET process. High fT : fT=

Ordering number:EN4138NPN Triple Diffused Planar Silicon Transistor2SC4891Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC4891] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:EN4856NPN Epitaxial Planar Silicon Transistor2SC4867VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2059B High cutoff frequency : fT=9.0GHz typ.[2SC4867]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Em

Ordering number:EN4137NPN Triple Diffused Planar Silicon Transistor2SC4890Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC4890] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number : ENA1076 2SC4853ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorLow-Voltage, Low-Current2SC4853AHigh-Frequency Amplifier ApplicationsFeatures Low-voltage, low-current operation : fT=5GHz typ.(VCE=1V, IC=1mA) :S21e2=7dB typ (f=1GHz).: NF=2.6dB typ (f=1GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number:EN4579NPN Epitaxial Planar Silicon Transistor2SC4854Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2018B: NF=2.6dB typ (f=1GHz).[2SC4854]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitte

Ordering number:EN4135PNP/NPN Epitaxial Planar Silicon Transistor2SA1855/2SC483750V/4A Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2084BFeatures [2SA1855/2SC4837] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Wide ASO and large current capacity

Ordering number:EN4583NPN Epitaxial Planar Silicon Transistor2SC4864VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =11dB typ (f=1GHz).2018B High cutoff frequency : fT=7.0GHz typ.[2SC4864]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : C

Ordering number:EN4558NPN Epitaxial Planar Silicon Transistor2SC4851Muting CircuitsFeatures Package Dimensions Very small-sized package permitting 2SC4851-unit:mmapplied sets to be made smaller and slimer.2059B Small output capacitance.[2SC4851] Low collector-to-emitter saturation voltage.0.3 Small ON resistance.0.1530~0.11 20.3 0.60.65 0.650.

Ordering number:EN4582NPN Epitaxial Planar Silicon Transistor2SC4863VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =11dB typ (f=1GHz).2059B High cutoff frequency : fT=7.0GHz typ.[2SC4863]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Em

Ordering number:EN4717PNP/NPN Epitaxial Planar Silicon Transistor2SA1853/2SC4827High Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display video output. Wide-unit:mmband amplifier.2084B[2SA1853/2SC4827]Features Adoption of FBET process. High fT : fT=300MHz. High breakdown voltage : VCEO=200V. Small

Ordering number:EN4559NPN Epitaxial Planar Silicon Transistor2SC4852Muting CircuitsFeatures Package Dimensions Small-sized package permitting 2SC4852-appliedunit:mmsets to be made smaller and slimer.2018B Small output capacitance.[2SC4852] Low collector-to-emitter saturation voltage. Small ON resistance. 0.40.1630~0.11 0.95 20.951.92.91 : Base

Ordering number:EN5043NPN Epitaxial Planar Silicon Transistor2SC4868VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2018B High cutoff frequency : fT=9.0GHz typ.[2SC4868]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter3

Ordering number:EN4580NPN Epitaxial Planar Silicon Transistor2SC4860UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High cutoff frequency : fT=6.5GHz typ.unit:mm2 High gain : S21e =11.5dB typ (f=1GHz).2059B Small Cob : NF=0.65pF typ.[2SC4860]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emitter3 : Collect

Ordering number:EN5044NPN Epitaxial Planar Silicon Transistor2SC4869VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =15dB typ (f=1GHz).2110A High cutoff frequency : fT=9.0GHz typ.[2SC4869]1.90.95 0.950.40.164 30 to 0.1210.60.95 0.851 : Emitter

Ordering number:EN4132PNP/NPN Epitaxial Planar Silicon Transistor2SA1850/2SC4824High Definition CRTDisplay Video Output ApplicationsApplications Package Dimensions High Definition CRT Display Video Output Applica-unit:mmtions, Wide-Band Amplifier.2084[2SA1850/2SC4824]Features Adoption of FBET process. High Gain Bandwidth product (fT=400MHz). High breakdow

Ordering number:EN4131NPN Epitaxial Planar Silicon Transistor2SC4821High-Definition CRT DisplayVideo Output Driver ApplicationsApplications Package Dimensions High definition CRT display video output driver,unit:mmwide band amplifier applications and high frequency2084Bdriver applications[2SC4821]4.51.9 2.610.51.2 1.4Features High gain bandwidth product (

Ordering number:EN4759NPN Epitaxial Planar Silicon Transistor2SC4855Low-Voltage, Low-Current&High-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7.5dB typ2110A(f=1GHz).[2SC4855]1.9: NF=2.6dB typ (f=1GHz).0.95 0.950.40.164 30 to 0.1210.60.95 0.85

Ordering number:EN4760NPN Epitaxial Planar Silicon Transistor2SC4865VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12.5dB typ (f=1GHz).2110A High cutoff frequency : fT=7.0GHz typ.[2SC4865]1.90.95 0.950.40.164 30 to 0.1210.60.95 0.851 : Emitt

Ordering number:EN4857NPN Epitaxial Planar Silicon Transistor2SC4871UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions High cutoff frequency : fT=10GHz typ.unit:mm2 High gain : S21e =13dB typ (f=1GHz).2059B Low noise : NF=1.3dB typ (f=1GHz).[2SC4871] Small Cob : Cob=0.4pF typ.0.30.1530 to 0.11 20.3 0.60.65 0.6

Ordering number:EN4578ANPN Epitaxial Planar Silicon Transistor2SC4853Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2059B: NF=2.6dB typ (f=1GHz).[2SC4853]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base

Ordering number:EN4136NPN Epitaxial Planar Silicon Transistor2SC4884High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High definition CRT display.unit:mm Especially suited for use in color TV chrome output2084Band high breakdown voltage driver applications.[2SC4884]4.51.9 2.610.51.2 1.4Features Adoption of MBIT process

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEETDARLINGTON POWER TRANSISTOR2SC4810NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control suchas PWM control for pulse motors or brushless motors in OA and FA equipment.In addition, this transistor features a package that can be auto-mounte

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4885NPN SILICON EPITAXIAL TRANSISTOR3 PINS SUPER MINI MOLDPACKAGE DIMENSIONS(Units: mm)FEATURES Excellent Low NF in Low Frequency Band 2.10.1 Low Voltage Use1.250.1 Low Cob : 0.9 pF TYP. Low Noise Voltage : 90 mV TYP.2 Super Mini Mold Package. EIAJ : SC-7031ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)Colle

DATA SHEETSILICON POWER TRANSISTOR2SC4813NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat).This transistor is ideal for use as a driver in DC/DC converters and actuators.In addition, this transistor features a package that can be auto-mounted in radial taping specifica

DATA SHEETSILICON POWER TRANSISTOR2SC4815NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.This transistor is ideal for use as a driver in DC/DC converters and actuators.In addition, this transistor is available for the auto mount in the radial taping specifications an

DATA SHEETDARLINGTON POWER TRANSISTOR2SC4811NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control suchas PWM control for pulse motors or brushless motors in OA and FA equipment.In addition, this transistor features a package that can be auto-mounte

DATA SHEETSILICON POWER TRANSISTOR2SC4814NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and forsolenoid driving in automotive equipment.In addition, this trans

2SC4849TransistorsTransistors2SC5147(94L-712-C342)(96-736-C358)302

Ordering number : ENA1076A2SC4853ARF Transistorhttp://onsemi.com6V, 15mA, fT=5GHz, NPN Single MCPFeatures Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz) 2 : NF=2.6dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 12 VCollector-to-

Transistor2SC4835Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF.1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)0

Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi

Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.

Power Transistors2SC4892Silicon NPN triple diffusion planar typeFor power switchingUnit: mm5.0 0.1Features 10.0 0.2 1.0High-speed switching90High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0Allowing supply with the radial taping2.25 0.20.65 0.10.35 0.1 1.05 0.1Absolute Maximum Ratings (TC

Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.

Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat

Transistor2SC4835Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF.1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)0

Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi

Power Transistors2SC4898Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Low collector to emitter saturation voltage VCE(sat)1.4 0.22.6 0.1Absolute Maximum Ratings (TC=25C) 1.6 0.2Parameter Symbol Ratings U

Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat

2SC4807Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 4.4 GHz Typ High output power1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4807Absolute Maximum Ratings (Ta = 25C)Item Symbol Rati

2SC4877Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High breakdown voltage1. BaseVCES = 1500 V 2. Collector3. Emitter Builtin damper diode type Isolated packageTO-3PFM123213Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC4829Silicon NPN EpitaxialApplicationHigh frequency amplifierFeatures High frequency characteristicsfT = 1100 MHz Typ High voltage and small output capacitanceVCEO = 100 V, Cob = 4.2 pF Typ Suitable for wide band video amplifierOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC4829Ordering InformationhFE2SC4829B 60 to 1202SC4829C 100 to 20

2SC4880Silicon NPN Triple DiffusedApplicationTV/character display horizontal deflection outputFeatures High speed switchingtf 0.5 s High breakdown voltageVCBO = 1700 VOutlineTO-3PL1. Base 2. Collector 3. Emitter1232SC4880Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1700 VCollector to emitter vo

2SC4897Silicon NPN Triple DiffusedApplicationTO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 20 A Suitable for large size CRT Display1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4833 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 500 V VCEO Collector-

JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta

LAPT 2SC4886Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC4886 Symbol Conditions 2SC4886 UnitUnit 0.20.2 5.515.60.23.45VCBO 150 ICBO VCB=150V 100max AVVCEO 150 IEBO VEB=5V 100max AV

2SC4883/4883ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)Application : Audio Output Driver and TV Velocity-modulation(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsExternal Dimensions FM20(TO220F)Symbol 2SC4883 2SC4883AUnitSymbol Conditions 2SC4883 2SC4883A Unit0.24.20.210.1c0.52.8VCBO 150 180V 10max AI

SHINDENGENSwitching Power TransistorFS SeriesOUTLINE DIMENSIONS2SC4834 Case : ITO-220Unit : mm(TP8V40FS)8A NPNRATINGS

SMD Type TransistorsNPN Transistors2SC4807SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC4861SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type TransistorsNPN Transistors2SC4854SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=6V1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector

SMD Type TransistorsNPN Transistors2SC4864SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=8V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collecto

SMD Type TransistorsNPN Transistors2SC4852SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

SMD Type TransistorsNPN Transistors2SC4868SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4807DESCRIPTIONHigh Gain-Bandwidth Productf = 4.4 GHz TYP.THigh Output Power1 dB Power compression point P = 24 dBm TYP.cp@ V = 5V , I = 100 mA , f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF ~ UHF wide

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4847DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4830DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su

isc Silicon NPN Power Transistor 2SC4891DESCRIPTIONHigh Switching SpeedHigh reliabilityHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4849DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4883 2SC4883A DESCRIPTION With TO-220F package Complement to type 2SA1859/1859A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4878DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4881DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Switching SpeedLow Collector Saturation Voltage-: V = 0.4V(Max)@ (I = 2.5A, I = 125mA)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4806DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4880DESCRIPTIONHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4833DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute m

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SA1859A100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4850DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4886DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1860100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4848DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4834DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1859100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)a