2SC48 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC48
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.72 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 90 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO5
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2SC48 datasheet
2sc4840.pdf
2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc4842.pdf
2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C
2sc4844.pdf
2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc4839.pdf
2SC4839 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4839 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C
2sc4843.pdf
2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 15.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5
2sc4841.pdf
2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 8.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc4836.pdf
Ordering number EN4134 NPN Epitaxial Planar Silicon Transistor 2SC4836 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SC4836] 4.5 Large allowable collector dissipation. 1.9 2.6 10.5 1.2 1.4 Low saturation voltage. Large current capacity. Fast switching speed. Usa
2sc4861.pdf
Ordering number EN4581 NPN Epitaxial Planar Silicon Transistor 2SC4861 UHF Converter, Local Oscillator Applications Features Package Dimensions High cutoff frequency fT=6.5GHz typ. unit mm 2 High gain S21e =11.5dB typ (f=1GHz). 2018B Small Cob NF=0.65pF typ. [2SC4861] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collector SANYO
2sa1852 2sc4826.pdf
Ordering number ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, unit mm wide-band amplifer. 2084B [2SA1852 / 2SC4826] Features 4.5 1.9 2.6 10.5 1.2 1.4 Adoption of FBET process. High fT fT=
2sc4891.pdf
Ordering number EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4891] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
2sc4867.pdf
Ordering number EN4856 NPN Epitaxial Planar Silicon Transistor 2SC4867 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm 2 High gain S21e =13dB typ (f=1GHz). 2059B High cutoff frequency fT=9.0GHz typ. [2SC4867] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Em
2sc4890.pdf
Ordering number EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4890] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
2sc4853a.pdf
Ordering number ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current 2SC4853A High-Frequency Amplifier Applications Features Low-voltage, low-current operation fT=5GHz typ. (VCE=1V, IC=1mA) S21e 2=7dB typ (f=1GHz). NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol
2sc4854.pdf
Ordering number EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2018B NF=2.6dB typ (f=1GHz). [2SC4854] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitte
2sc4837.pdf
Ordering number EN4135 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SA1855/2SC4837] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Wide ASO and large current capacity
2sc4864.pdf
Ordering number EN4583 NPN Epitaxial Planar Silicon Transistor 2SC4864 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm 2 High gain S21e =11dB typ (f=1GHz). 2018B High cutoff frequency fT=7.0GHz typ. [2SC4864] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 C
2sc4851.pdf
Ordering number EN4558 NPN Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits Features Package Dimensions Very small-sized package permitting 2SC4851- unit mm applied sets to be made smaller and slimer. 2059B Small output capacitance. [2SC4851] Low collector-to-emitter saturation voltage. 0.3 Small ON resistance. 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.
2sc4863.pdf
Ordering number EN4582 NPN Epitaxial Planar Silicon Transistor 2SC4863 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm 2 High gain S21e =11dB typ (f=1GHz). 2059B High cutoff frequency fT=7.0GHz typ. [2SC4863] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Em
2sc4827.pdf
Ordering number EN4717 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1853/2SC4827 High Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output. Wide- unit mm band amplifier. 2084B [2SA1853/2SC4827] Features Adoption of FBET process. High fT fT=300MHz. High breakdown voltage VCEO=200V. Small
2sc4852.pdf
Ordering number EN4559 NPN Epitaxial Planar Silicon Transistor 2SC4852 Muting Circuits Features Package Dimensions Small-sized package permitting 2SC4852-applied unit mm sets to be made smaller and slimer. 2018B Small output capacitance. [2SC4852] Low collector-to-emitter saturation voltage. Small ON resistance. 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base
2sc4868.pdf
Ordering number EN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm 2 High gain S21e =13dB typ (f=1GHz). 2018B High cutoff frequency fT=9.0GHz typ. [2SC4868] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3
2sc4860.pdf
Ordering number EN4580 NPN Epitaxial Planar Silicon Transistor 2SC4860 UHF Converter, Local Oscillator Applications Features Package Dimensions High cutoff frequency fT=6.5GHz typ. unit mm 2 High gain S21e =11.5dB typ (f=1GHz). 2059B Small Cob NF=0.65pF typ. [2SC4860] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emitter 3 Collect
2sc4869.pdf
Ordering number EN5044 NPN Epitaxial Planar Silicon Transistor 2SC4869 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm 2 High gain S21e =15dB typ (f=1GHz). 2110A High cutoff frequency fT=9.0GHz typ. [2SC4869] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 Emitter
2sc4824.pdf
Ordering number EN4132 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1850/2SC4824 High Definition CRT Display Video Output Applications Applications Package Dimensions High Definition CRT Display Video Output Applica- unit mm tions, Wide-Band Amplifier. 2084 [2SA1850/2SC4824] Features Adoption of FBET process. High Gain Bandwidth product (fT=400MHz). High breakdow
2sc4821.pdf
Ordering number EN4131 NPN Epitaxial Planar Silicon Transistor 2SC4821 High-Definition CRT Display Video Output Driver Applications Applications Package Dimensions High definition CRT display video output driver, unit mm wide band amplifier applications and high frequency 2084B driver applications [2SC4821] 4.5 1.9 2.6 10.5 1.2 1.4 Features High gain bandwidth product (
2sc4855.pdf
Ordering number EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7.5dB typ 2110A (f=1GHz). [2SC4855] 1.9 NF=2.6dB typ (f=1GHz). 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85
2sc4865.pdf
Ordering number EN4760 NPN Epitaxial Planar Silicon Transistor 2SC4865 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm 2 High gain S21e =12.5dB typ (f=1GHz). 2110A High cutoff frequency fT=7.0GHz typ. [2SC4865] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 Emitt
2sc4871.pdf
Ordering number EN4857 NPN Epitaxial Planar Silicon Transistor 2SC4871 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions High cutoff frequency fT=10GHz typ. unit mm 2 High gain S21e =13dB typ (f=1GHz). 2059B Low noise NF=1.3dB typ (f=1GHz). [2SC4871] Small Cob Cob=0.4pF typ. 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.6
2sc4853.pdf
Ordering number EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2059B NF=2.6dB typ (f=1GHz). [2SC4853] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base
2sc4884.pdf
Ordering number EN4136 NPN Epitaxial Planar Silicon Transistor 2SC4884 High-Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display. unit mm Especially suited for use in color TV chrome output 2084B and high breakdown voltage driver applications. [2SC4884] 4.5 1.9 2.6 10.5 1.2 1.4 Features Adoption of MBIT process
2sc4899.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc4810.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4810 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounte
2sc4885.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS (Units mm) FEATURES Excellent Low NF in Low Frequency Band 2.1 0.1 Low Voltage Use 1.25 0.1 Low Cob 0.9 pF TYP. Low Noise Voltage 90 mV TYP. 2 Super Mini Mold Package. EIAJ SC-70 3 1 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Colle
2sc4813.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifica
2sc4815.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping specifications an
2sc4811.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounte
2sc4814.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high- precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment. In addition, this trans
2sc4849.pdf
2SC4849 Transistors Transistors 2SC5147 (94L-712-C342) (96-736-C358) 302
2sc4853a-4.pdf
Ordering number ENA1076A 2SC4853A RF Transistor http //onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features Low-voltage, low-current operation fT=5GHz typ (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz) 2 NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-
2sc4835.pdf
Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C) 0
2sc4809 e.pdf
Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi
2sc4805 e.pdf
Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.
2sc4892.pdf
Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High-speed switching 90 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0 Allowing supply with the radial taping 2.25 0.2 0.65 0.1 0.35 0.1 1.05 0.1 Absolute Maximum Ratings (TC
2sc4805.pdf
Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.
2sc4808 e.pdf
Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat
2sc4835 e.pdf
Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C) 0
2sc4809.pdf
Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi
2sc4898.pdf
Power Transistors 2SC4898 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (TC=25 C) 1.6 0.2 Parameter Symbol Ratings U
2sc4808.pdf
Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat
2sc4807.pdf
2SC4807 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 4.4 GHz Typ High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4807 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rati
2sc4877.pdf
2SC4877 Silicon NPN Triple Diffused Application TO 3PFM TV / character display horizontal deflection output Features High breakdown voltage 1. Base VCES = 1500 V 2. Collector 3. Emitter Built in damper diode type Isolated package TO-3PFM 1 2 3 2 1 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit
2sc4829.pdf
2SC4829 Silicon NPN Epitaxial Application High frequency amplifier Features High frequency characteristics fT = 1100 MHz Typ High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 pF Typ Suitable for wide band video amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4829 Ordering Information hFE 2SC4829B 60 to 120 2SC4829C 100 to 20
2sc4880.pdf
2SC4880 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High speed switching tf 0.5 s High breakdown voltage VCBO = 1700 V Outline TO-3PL 1. Base 2. Collector 3. Emitter 1 2 3 2SC4880 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter vo
2sc4833.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4833 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-
2sc4804.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta
2sc4886.pdf
LAPT 2SC4886 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC4886 Symbol Conditions 2SC4886 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 150 ICBO VCB=150V 100max A V VCEO 150 IEBO VEB=5V 100max A V
2sc4883.pdf
2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application Audio Output Driver and TV Velocity-modulation (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM20(TO220F) Symbol 2SC4883 2SC4883A Unit Symbol Conditions 2SC4883 2SC4883A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 150 180 V 10max A I
2sc4834.pdf
SHINDENGEN Switching Power Transistor FS Series OUTLINE DIMENSIONS 2SC4834 Case ITO-220 Unit mm (TP8V40FS) 8A NPN RATINGS
2sc4807.pdf
SMD Type Transistors NPN Transistors 2SC4807 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE
2sc4861.pdf
SMD Type Transistors NPN Transistors 2SC4861 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc4854.pdf
SMD Type Transistors NPN Transistors 2SC4854 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=6V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector
2sc4864.pdf
SMD Type Transistors NPN Transistors 2SC4864 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=8V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collecto
2sc4852.pdf
SMD Type Transistors NPN Transistors 2SC4852 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle
2sc4868.pdf
SMD Type Transistors NPN Transistors 2SC4868 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec
2sc4807.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4807 DESCRIPTION High Gain-Bandwidth Product f = 4.4 GHz TYP. T High Output Power 1 dB Power compression point P = 24 dBm TYP. cp @ V = 5V , I = 100 mA , f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF wide
2sc4847.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4847 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A
2sc4830.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4830 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power su
2sc4891.pdf
isc Silicon NPN Power Transistor 2SC4891 DESCRIPTION High Switching Speed High reliability High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
2sc4849.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4849 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
2sc4878.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4878 DESCRIPTION High Breakdown Voltage High Switching Speed Built in damper diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc4881.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4881 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Switching Speed Low Collector Saturation Voltage- V = 0.4V(Max)@ (I = 2.5A, I = 125mA) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo
2sc4806.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4806 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power su
2sc4880.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4880 DESCRIPTION High Breakdown Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
2sc4833.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4833 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXI
2sc4804.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute m
2sc4883a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4883A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SA1859A 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4850.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4850 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A
2sc4886.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4886 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Complement to Type 2SA1860 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sc4848.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
2sc4834.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4834 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXI
2sc4883.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4883 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Complement to Type 2SA1859 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Otros transistores... 2SC478 , 2SC4781 , 2SC4789 , 2SC479 , 2SC4793 , 2SC4796 , 2SC4797 , 2SC479H , 2SC2625 , 2SC480 , 2SC4806 , 2SC481 , 2SC482 , 2SC4828 , 2SC482G , 2SC482O , 2SC482Y .
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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