All Transistors. 2SC48 Datasheet

 

2SC48 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC48

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.72 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

2SC48 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC48 Datasheet (PDF)

1.1. 2sc4853a-4-tl-e.pdf Size:241K _update

2SC48
2SC48

Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz) ⏐ ⏐2 : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-

1.2. 2sc4841.pdf Size:465K _toshiba

2SC48
2SC48

2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 8.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

 1.3. 2sc4881.pdf Size:183K _toshiba

2SC48
2SC48



1.4. 2sc4842.pdf Size:468K _toshiba

2SC48
2SC48

2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

 1.5. 2sc4844.pdf Size:469K _toshiba

2SC48
2SC48

2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

1.6. 2sc4840.pdf Size:467K _toshiba

2SC48
2SC48

2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

1.7. 2sc4839.pdf Size:466K _toshiba

2SC48
2SC48

2SC4839 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4839 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

1.8. 2sc4843.pdf Size:468K _toshiba

2SC48
2SC48

2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 15.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5

1.9. 2sc4821.pdf Size:95K _sanyo

2SC48
2SC48

Ordering number:EN4131 NPN Epitaxial Planar Silicon Transistor 2SC4821 High-Definition CRT Display Video Output Driver Applications Applications Package Dimensions High definition CRT display video output driver, unit:mm wide band amplifier applications and high frequency 2084B driver applications [2SC4821] 4.5 1.9 2.6 10.5 1.2 1.4 Features High gain bandwidth product (fT=2.

1.10. 2sc4884.pdf Size:106K _sanyo

2SC48
2SC48

Ordering number:EN4136 NPN Epitaxial Planar Silicon Transistor 2SC4884 High-Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display. unit:mm Especially suited for use in color TV chrome output 2084B and high breakdown voltage driver applications. [2SC4884] 4.5 1.9 2.6 10.5 1.2 1.4 Features Adoption of MBIT process.

1.11. 2sc4869.pdf Size:125K _sanyo

2SC48
2SC48

Ordering number:EN5044 NPN Epitaxial Planar Silicon Transistor 2SC4869 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =15dB typ (f=1GHz). 2110A High cutoff frequency : fT=9.0GHz typ. [2SC4869] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 : Emitter 2.9 2 :

1.12. 2sc4826.pdf Size:26K _sanyo

2SC48
2SC48

Ordering number : ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, unit : mm wide-band amplifer. 2084B [2SA1852 / 2SC4826] Features 4.5 1.9 2.6 10.5 1.2 1.4 Adoption of FBET process. High fT : fT=300MHz(ty

1.13. 2sc4852.pdf Size:100K _sanyo

2SC48
2SC48

Ordering number:EN4559 NPN Epitaxial Planar Silicon Transistor 2SC4852 Muting Circuits Features Package Dimensions Small-sized package permitting 2SC4852-applied unit:mm sets to be made smaller and slimer. 2018B Small output capacitance. [2SC4852] Low collector-to-emitter saturation voltage. Small ON resistance. 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : E

1.14. 2sc4837.pdf Size:149K _sanyo

2SC48
2SC48

Ordering number:EN4135 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SA1855/2SC4837] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Wide ASO and large current capacity. Us

1.15. 2sc4860.pdf Size:116K _sanyo

2SC48
2SC48

Ordering number:EN4580 NPN Epitaxial Planar Silicon Transistor 2SC4860 UHF Converter, Local Oscillator Applications Features Package Dimensions High cutoff frequency : fT=6.5GHz typ. unit:mm 2 High gain : ? S21e? =11.5dB typ (f=1GHz). 2059B Small Cob : NF=0.65pF typ. [2SC4860] 0.3 0.15 3 0~0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO

1.16. 2sc4853a.pdf Size:55K _sanyo

2SC48
2SC48

Ordering number : ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current 2SC4853A High-Frequency Amplifier Applications Features Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) :?S21e?2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions

1.17. 2sc4827.pdf Size:109K _sanyo

2SC48
2SC48

Ordering number:EN4717 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1853/2SC4827 High Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output. Wide- unit:mm band amplifier. 2084B [2SA1853/2SC4827] Features Adoption of FBET process. High fT : fT=300MHz. High breakdown voltage : VCEO=200V. Small reverse

1.18. 2sc4861.pdf Size:116K _sanyo

2SC48
2SC48

Ordering number:EN4581 NPN Epitaxial Planar Silicon Transistor 2SC4861 UHF Converter, Local Oscillator Applications Features Package Dimensions High cutoff frequency : fT=6.5GHz typ. unit:mm 2 High gain : ? S21e? =11.5dB typ (f=1GHz). 2018B Small Cob : NF=0.65pF typ. [2SC4861] 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP Spe

1.19. 2sc4836.pdf Size:110K _sanyo

2SC48
2SC48

Ordering number:EN4134 NPN Epitaxial Planar Silicon Transistor 2SC4836 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SC4836] 4.5 Large allowable collector dissipation. 1.9 2.6 10.5 1.2 1.4 Low saturation voltage. Large current capacity. Fast switching speed. Usage of rad

1.20. 2sc4863.pdf Size:117K _sanyo

2SC48
2SC48

Ordering number:EN4582 NPN Epitaxial Planar Silicon Transistor 2SC4863 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =11dB typ (f=1GHz). 2059B High cutoff frequency : fT=7.0GHz typ. [2SC4863] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 :

1.21. 2sc4824.pdf Size:140K _sanyo

2SC48
2SC48

Ordering number:EN4132 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1850/2SC4824 High Definition CRT Display Video Output Applications Applications Package Dimensions High Definition CRT Display Video Output Applica- unit:mm tions, Wide-Band Amplifier. 2084 [2SA1850/2SC4824] Features Adoption of FBET process. High Gain Bandwidth product (fT=400MHz). High breakdown volta

1.22. 2sc4868.pdf Size:123K _sanyo

2SC48
2SC48

Ordering number:EN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2018B High cutoff frequency : fT=9.0GHz typ. [2SC4868] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collecto

1.23. 2sc4855.pdf Size:122K _sanyo

2SC48
2SC48

Ordering number:EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) : ? S21e? =7.5dB typ 2110A (f=1GHz). [2SC4855] 1.9 : NF=2.6dB typ (f=1GHz). 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 : Emi

1.24. 2sc4865.pdf Size:115K _sanyo

2SC48
2SC48

Ordering number:EN4760 NPN Epitaxial Planar Silicon Transistor 2SC4865 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12.5dB typ (f=1GHz). 2110A High cutoff frequency : fT=7.0GHz typ. [2SC4865] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 : Emitter 2.9 2

1.25. 2sc4891.pdf Size:107K _sanyo

2SC48
2SC48

Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4891] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.

1.26. 2sc4867.pdf Size:127K _sanyo

2SC48
2SC48

Ordering number:EN4856 NPN Epitaxial Planar Silicon Transistor 2SC4867 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2059B High cutoff frequency : fT=9.0GHz typ. [2SC4867] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 :

1.27. 2sc4871.pdf Size:126K _sanyo

2SC48
2SC48

Ordering number:EN4857 NPN Epitaxial Planar Silicon Transistor 2SC4871 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions High cutoff frequency : fT=10GHz typ. unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2059B Low noise : NF=1.3dB typ (f=1GHz). [2SC4871] Small Cob : Cob=0.4pF typ. 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0

1.28. 2sc4851.pdf Size:104K _sanyo

2SC48
2SC48

Ordering number:EN4558 NPN Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits Features Package Dimensions Very small-sized package permitting 2SC4851- unit:mm applied sets to be made smaller and slimer. 2059B Small output capacitance. [2SC4851] Low collector-to-emitter saturation voltage. 0.3 Small ON resistance. 0.15 3 0~0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0

1.29. 2sc4890.pdf Size:107K _sanyo

2SC48
2SC48

Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4890] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.

1.30. 2sc4853.pdf Size:126K _sanyo

2SC48
2SC48

Ordering number:EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) : ? S21e? =7dB typ (f=1GHz). 2059B : NF=2.6dB typ (f=1GHz). [2SC4853] 0.3 0.15 3 0~0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emit

1.31. 2sc4854.pdf Size:125K _sanyo

2SC48
2SC48

Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) : ? S21e? =7dB typ (f=1GHz). 2018B : NF=2.6dB typ (f=1GHz). [2SC4854] 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : C

1.32. 2sc4864.pdf Size:118K _sanyo

2SC48
2SC48

Ordering number:EN4583 NPN Epitaxial Planar Silicon Transistor 2SC4864 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =11dB typ (f=1GHz). 2018B High cutoff frequency : fT=7.0GHz typ. [2SC4864] 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector

1.33. 2sc4899.pdf Size:84K _renesas

2SC48
2SC48

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.34. 2sc4810.pdf Size:120K _nec

2SC48
2SC48

DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4810 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounted i

1.35. 2sc4813.pdf Size:169K _nec

2SC48
2SC48

DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specificatio

1.36. 2sc4814.pdf Size:161K _nec

2SC48
2SC48

DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high- precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment. In addition, this transist

1.37. 2sc4815.pdf Size:166K _nec

2SC48
2SC48

DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping specifications and f

1.38. 2sc4885.pdf Size:82K _nec

2SC48
2SC48

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS (Units: mm) FEATURES Excellent Low NF in Low Frequency Band 2.10.1 Low Voltage Use 1.250.1 Low Cob : 0.9 pF TYP. Low Noise Voltage : 90 mV TYP. 2 Super Mini Mold Package. EIAJ : SC-70 3 1 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Vo

1.39. 2sc4811.pdf Size:130K _nec

2SC48
2SC48

DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounted i

1.40. 2sc4849.pdf Size:39K _rohm

2SC48

2SC4849 Transistors Transistors 2SC5147 (94L-712-C342) (96-736-C358) 302

1.41. 2sc4808.pdf Size:37K _panasonic

2SC48
2SC48

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Un

1.42. 2sc4898.pdf Size:40K _panasonic

2SC48
2SC48

Power Transistors 2SC4898 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (TC=25?C) 1.6 0.2 Parameter Symbol Ratings Unit 0.8 0.1

1.43. 2sc4808 e.pdf Size:41K _panasonic

2SC48
2SC48

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Un

1.44. 2sc4805.pdf Size:36K _panasonic

2SC48
2SC48

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2 0.1

1.45. 2sc4805 e.pdf Size:40K _panasonic

2SC48
2SC48

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2 0.1

1.46. 2sc4892.pdf Size:74K _panasonic

2SC48
2SC48

Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0 0.1 Features 10.0 0.2 1.0 High-speed switching 90 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0 Allowing supply with the radial taping 2.25 0.2 0.65 0.1 0.35 0.1 1.05 0.1 Absolute Maximum Ratings (TC=25?C) 0.5

1.47. 2sc4809.pdf Size:36K _panasonic

2SC48
2SC48

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing.

1.48. 2sc4835 e.pdf Size:41K _panasonic

2SC48
2SC48

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.

1.49. 2sc4809 e.pdf Size:40K _panasonic

2SC48
2SC48

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing.

1.50. 2sc4835.pdf Size:37K _panasonic

2SC48
2SC48

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.

1.51. 2sc4807.pdf Size:46K _hitachi

2SC48
2SC48

2SC4807 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 4.4 GHz Typ High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4807 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

1.52. 2sc4880.pdf Size:33K _hitachi

2SC48
2SC48

2SC4880 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High speed switching tf ? 0.5 s High breakdown voltage VCBO = 1700 V Outline TO-3PL 1. Base 2. Collector 3. Emitter 1 2 3 2SC4880 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCEO

1.53. 2sc4877.pdf Size:21K _hitachi

2SC48
2SC48

2SC4877 Silicon NPN Triple Diffused Application TO3PFM TV / character display horizontal deflection output Features High breakdown voltage 1. Base VCES = 1500 V 2. Collector 3. Emitter Builtin damper diode type Isolated package TO-3PFM 1 2 3 2 1 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to emit

1.54. 2sc4897.pdf Size:21K _hitachi

2SC48
2SC48

2SC4897 Silicon NPN Triple Diffused Application TO3PL Character Display Horizontal Deflection Output Features High speed switching time: 0.5 s max High breakdown voltage, high current: VCBO = 1500 V, IC = 20 A Suitable for large size CRT Display 1. Base 2. Collector 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit

1.55. 2sc4829.pdf Size:30K _hitachi

2SC48
2SC48

2SC4829 Silicon NPN Epitaxial Application High frequency amplifier Features High frequency characteristics fT = 1100 MHz Typ High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 pF Typ Suitable for wide band video amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4829 Ordering Information hFE 2SC4829B 60 to 120 2SC4829C 100 to 200 Absolu

1.56. 2sc4838.pdf Size:155K _mitsubishi

2SC48
2SC48

1.57. 2sc4804.pdf Size:143K _jmnic

2SC48
2SC48

JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION ·With ITO-220 package ·High breakdown voltage APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25

1.58. 2sc4833.pdf Size:40K _jmnic

2SC48
2SC48

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4833 DESCRIPTION ·With ITO-220 package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitt

1.59. 2sc4883.pdf Size:23K _sanken-ele

2SC48

2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation (Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM20(TO220F) Symbol 2SC4883 2SC4883A Unit Symbol Conditions 2SC4883 2SC4883A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 150 180 V 10max A ICBO VCE

1.60. 2sc4886.pdf Size:25K _sanken-ele

2SC48

LAPT 2SC4886 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC4886 Symbol Conditions 2SC4886 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 150 ICBO VCB=150V 100max A V VCEO 150 IEBO VEB=5V 100max A V VEBO 5 V

1.61. 2sc4834.pdf Size:319K _shindengen

2SC48
2SC48

SHINDENGEN Switching Power Transistor FS Series OUTLINE DIMENSIONS 2SC4834 Case : ITO-220 Unit : mm (TP8V40FS) 8A NPN RATINGS

1.62. 2sc4878.pdf Size:97K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4878 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symb

1.63. 2sc4806.pdf Size:262K _inchange_semiconductor

2SC48
2SC48

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4806 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.64. 2sc4881.pdf Size:225K _inchange_semiconductor

2SC48
2SC48

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4881 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IBB= 125mA) APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

1.65. 2sc4848.pdf Size:235K _inchange_semiconductor

2SC48
2SC48

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMU

1.66. 2sc4883 2sc4883a.pdf Size:113K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4883 2SC4883A DESCRIPTION ·With TO-220F package ·Complement to type 2SA1859/1859A APPLICATIONS ·For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?)

1.67. 2sc4830.pdf Size:259K _inchange_semiconductor

2SC48
2SC48

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4830 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.68. 2sc4880.pdf Size:89K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4880 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=

1.69. 2sc4804.pdf Size:114K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION Ў¤ With ITO-220 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ Switching regulator and high voltage switching applications Ў¤ High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maxi

1.70. 2sc4834.pdf Size:84K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4834 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·High voltage,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open

1.71. 2sc4849.pdf Size:71K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4849 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) S

1.72. 2sc4833.pdf Size:116K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4833 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ High voltage,high speed PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU IC

1.73. 2sc4886.pdf Size:125K _inchange_semiconductor

2SC48
2SC48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4886 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1860 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto

1.74. 2sc4852.pdf Size:818K _kexin

2SC48
2SC48

SMD Type Transistors NPN Transistors 2SC4852 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

1.75. 2sc4807.pdf Size:951K _kexin

2SC48
2SC48

SMD Type Transistors NPN Transistors 2SC4807 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.2A ● Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE

1.76. 2sc4861.pdf Size:937K _kexin

2SC48
2SC48

SMD Type Transistors NPN Transistors 2SC4861 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

1.77. 2sc4868.pdf Size:962K _kexin

2SC48
2SC48

SMD Type Transistors NPN Transistors 2SC4868 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec

1.78. 2sc4854.pdf Size:1279K _kexin

2SC48
2SC48

SMD Type Transistors NPN Transistors 2SC4854 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=15mA ● Collector Emitter Voltage VCEO=6V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector

1.79. 2sc4864.pdf Size:932K _kexin

2SC48
2SC48

SMD Type Transistors NPN Transistors 2SC4864 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=70mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collecto

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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