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2SC485 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC485

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 10 MHz

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO39

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2SC485 Datasheet (PDF)

1.1. 2sc4853a-4-tl-e.pdf Size:241K _update

2SC485
2SC485

Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz) ⏐ ⏐2 : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-

1.2. 2sc4652 2sc4847 2sc4850.pdf Size:73K _update_bjt

2SC485



 1.3. 2sc4855.pdf Size:122K _sanyo

2SC485
2SC485

Ordering number:EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions · Low-voltage, low-current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) :  S21e =7.5dB typ 2110A (f=1GHz). [2SC4855] 1.9 : NF=2.6dB typ (f=1GHz). 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85

1.4. 2sc4853.pdf Size:126K _sanyo

2SC485
2SC485

Ordering number:EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions · Low-voltage, low-current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) :  S21e =7dB typ (f=1GHz). 2059B : NF=2.6dB typ (f=1GHz). [2SC4853] 0.3 0.15 3 0~0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base

 1.5. 2sc4854.pdf Size:125K _sanyo

2SC485
2SC485

Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions · Low-voltage, low-current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) :  S21e =7dB typ (f=1GHz). 2018B : NF=2.6dB typ (f=1GHz). [2SC4854] 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitte

1.6. 2sc4852.pdf Size:100K _sanyo

2SC485
2SC485

Ordering number:EN4559 NPN Epitaxial Planar Silicon Transistor 2SC4852 Muting Circuits Features Package Dimensions · Small-sized package permitting 2SC4852-applied unit:mm sets to be made smaller and slimer. 2018B · Small output capacitance. [2SC4852] · Low collector-to-emitter saturation voltage. · Small ON resistance. 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base

1.7. 2sc4853a.pdf Size:55K _sanyo

2SC485
2SC485

Ordering number : ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current 2SC4853A High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) :⏐S21e⏐2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

1.8. 2sc4851.pdf Size:104K _sanyo

2SC485
2SC485

Ordering number:EN4558 NPN Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits Features Package Dimensions · Very small-sized package permitting 2SC4851- unit:mm applied sets to be made smaller and slimer. 2059B · Small output capacitance. [2SC4851] · Low collector-to-emitter saturation voltage. 0.3 · Small ON resistance. 0.15 3 0~0.1 1 2 0.3 0.6 0.65 0.65 0.

1.9. 2sc4853a-4.pdf Size:241K _onsemi

2SC485
2SC485

Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz) ⏐ ⏐2 : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-

1.10. 2sc4652 2sc4847 2sc4850.pdf Size:73K _no

2SC485



1.11. 2sc4850.pdf Size:186K _inchange_semiconductor

2SC485
2SC485

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4850 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V = 120V (Min) (BR)CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications A

1.12. 2sc4854.pdf Size:1279K _kexin

2SC485
2SC485

SMD Type Transistors NPN Transistors 2SC4854 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=15mA ● Collector Emitter Voltage VCEO=6V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector

1.13. 2sc4852.pdf Size:818K _kexin

2SC485
2SC485

SMD Type Transistors NPN Transistors 2SC4852 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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