Справочник транзисторов. 2SC485

 

Биполярный транзистор 2SC485 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC485
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.8 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO39

 Аналоги (замена) для 2SC485

 

 

2SC485 Datasheet (PDF)

 0.1. Size:55K  sanyo
2sc4853a.pdf

2SC485 2SC485

Ordering number : ENA1076 2SC4853ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorLow-Voltage, Low-Current2SC4853AHigh-Frequency Amplifier ApplicationsFeatures Low-voltage, low-current operation : fT=5GHz typ.(VCE=1V, IC=1mA) :S21e2=7dB typ (f=1GHz).: NF=2.6dB typ (f=1GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

 0.2. Size:125K  sanyo
2sc4854.pdf

2SC485 2SC485

Ordering number:EN4579NPN Epitaxial Planar Silicon Transistor2SC4854Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2018B: NF=2.6dB typ (f=1GHz).[2SC4854]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitte

 0.3. Size:104K  sanyo
2sc4851.pdf

2SC485 2SC485

Ordering number:EN4558NPN Epitaxial Planar Silicon Transistor2SC4851Muting CircuitsFeatures Package Dimensions Very small-sized package permitting 2SC4851-unit:mmapplied sets to be made smaller and slimer.2059B Small output capacitance.[2SC4851] Low collector-to-emitter saturation voltage.0.3 Small ON resistance.0.1530~0.11 20.3 0.60.65 0.650.

 0.4. Size:100K  sanyo
2sc4852.pdf

2SC485 2SC485

Ordering number:EN4559NPN Epitaxial Planar Silicon Transistor2SC4852Muting CircuitsFeatures Package Dimensions Small-sized package permitting 2SC4852-appliedunit:mmsets to be made smaller and slimer.2018B Small output capacitance.[2SC4852] Low collector-to-emitter saturation voltage. Small ON resistance. 0.40.1630~0.11 0.95 20.951.92.91 : Base

 0.5. Size:122K  sanyo
2sc4855.pdf

2SC485 2SC485

Ordering number:EN4759NPN Epitaxial Planar Silicon Transistor2SC4855Low-Voltage, Low-Current&High-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7.5dB typ2110A(f=1GHz).[2SC4855]1.9: NF=2.6dB typ (f=1GHz).0.95 0.950.40.164 30 to 0.1210.60.95 0.85

 0.6. Size:126K  sanyo
2sc4853.pdf

2SC485 2SC485

Ordering number:EN4578ANPN Epitaxial Planar Silicon Transistor2SC4853Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2059B: NF=2.6dB typ (f=1GHz).[2SC4853]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base

 0.7. Size:241K  onsemi
2sc4853a-4.pdf

2SC485 2SC485

Ordering number : ENA1076A2SC4853ARF Transistorhttp://onsemi.com6V, 15mA, fT=5GHz, NPN Single MCPFeatures Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz) 2 : NF=2.6dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 12 VCollector-to-

 0.8. Size:73K  no
2sc4652 2sc4847 2sc4850.pdf

2SC485

 0.9. Size:1279K  kexin
2sc4854.pdf

2SC485 2SC485

SMD Type TransistorsNPN Transistors2SC4854SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=6V1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector

 0.10. Size:818K  kexin
2sc4852.pdf

2SC485 2SC485

SMD Type TransistorsNPN Transistors2SC4852SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

 0.11. Size:186K  inchange semiconductor
2sc4850.pdf

2SC485 2SC485

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4850DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA

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