2SC4897 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4897Silicon NPN Triple DiffusedApplicationTO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 20 A Suitable for large size CRT Display1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

Ordering number:EN4138NPN Triple Diffused Planar Silicon Transistor2SC4891Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC4891] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:EN4137NPN Triple Diffused Planar Silicon Transistor2SC4890Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC4890] Adoption of MBIT process.16.05.63.43.12.82.0

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Power Transistors2SC4892Silicon NPN triple diffusion planar typeFor power switchingUnit: mm5.0 0.1Features 10.0 0.2 1.0High-speed switching90High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0Allowing supply with the radial taping2.25 0.20.65 0.10.35 0.1 1.05 0.1Absolute Maximum Ratings (TC

Power Transistors2SC4898Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Low collector to emitter saturation voltage VCE(sat)1.4 0.22.6 0.1Absolute Maximum Ratings (TC=25C) 1.6 0.2Parameter Symbol Ratings U

isc Silicon NPN Power Transistor 2SC4891DESCRIPTIONHigh Switching SpeedHigh reliabilityHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base