2SC4897 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4897
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 38
Noise Figure, dB: -
Package: TO264
2SC4897 Transistor Equivalent Substitute - Cross-Reference Search
2SC4897 Datasheet (PDF)
1.1. 2sc4897.pdf 
Size:21K _hitachi
2SC4897 Silicon NPN Triple Diffused Application TO3PL Character Display Horizontal Deflection Output Features High speed switching time: 0.5 s max High breakdown voltage, high current: VCBO = 1500 V, IC = 20 A Suitable for large size CRT Display 1. Base 2. Collector 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit
4.1. 2sc4891.pdf Size:107K _sanyo
Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4891] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.
4.2. 2sc4890.pdf Size:107K _sanyo
Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4890] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.
4.3. 2sc4899.pdf Size:84K _renesas
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (
4.4. 2sc4898.pdf Size:40K _panasonic
Power Transistors 2SC4898 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (TC=25?C) 1.6 0.2 Parameter Symbol Ratings Unit 0.8 0.1
4.5. 2sc4892.pdf Size:74K _panasonic
Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0 0.1 Features 10.0 0.2 1.0 High-speed switching 90 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0 Allowing supply with the radial taping 2.25 0.2 0.65 0.1 0.35 0.1 1.05 0.1 Absolute Maximum Ratings (TC=25?C) 0.5
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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