2SC4913 Todos los transistores

 ..1. Size:40K  hitachi
 2sc4913.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.1. Size:743K  1
 2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf

 8.2. Size:319K  toshiba
 2sc4915.pdf

2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emit

 8.3. Size:93K  sanyo
 2sc4910.pdf

Ordering number EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions On-chip emitter ballast resistors. unit mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector 3 Base 2.5 2.5 SANYO FLP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol

 8.4. Size:99K  sanyo
 2sc4919.pdf

Ordering number EN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SC4919- unit mm applied sets to be made smaller and slimmer. 2106A Small output capacitance. [2SC4909] Low collector-to-emitter saturation voltage. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1

 8.5. Size:100K  no
 2sc4916.pdf

 8.6. Size:192K  inchange semiconductor
 2sc4916.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4916 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal output applications for medium resolution display &