2SC4913 Specs and Replacement
Type Designator: 2SC4913
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 2000 V
Maximum Collector-Emitter Voltage |Vce|: 2000 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220AB
2SC4913 Substitution
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2SC4913 datasheet
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf ![]()
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2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emit... See More ⇒
Ordering number EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions On-chip emitter ballast resistors. unit mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector 3 Base 2.5 2.5 SANYO FLP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol ... See More ⇒
Detailed specifications: 2SC489R, 2SC489Y, 2SC49, 2SC490, 2SC490B, 2SC490R, 2SC490Y, 2SC491, BD333, 2SC4916, 2SC4917, 2SC491B, 2SC491R, 2SC491Y, 2SC492, 2SC4927, 2SC4928
Keywords - 2SC4913 pdf specs
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