2SC4928 Todos los transistores

 ..1. Size:20K  hitachi
 2sc4928.pdf

 ..2. Size:177K  inchange semiconductor
 2sc4928.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4928 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output applications. ABSOLUTE MAXIMUM RA

 8.1. Size:743K  1
 2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf

 8.2. Size:60K  sanyo
 2sc4920.pdf

Ordering number EN4766 NPN Epitaxial Planar Silicon Transistor 2SC4920 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=4.7k , R2=4.7k ). 2106A Very small-sized package permitting 2SC4920- [2SC4920] applied sets to be made smaller and slimmer. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1

 8.3. Size:78K  sanyo
 2sc4924.pdf

 8.4. Size:60K  sanyo
 2sc4921.pdf

Ordering number EN4767 NPN Epitaxial Planar Silicon Transistor 2SC4921 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=10k , R2=10k ). 2106A Very small-sized package permitting 2SC4921- [2SC4921] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1

 8.5. Size:60K  sanyo
 2sc4922.pdf

Ordering number EN4768 NPN Epitaxial Planar Silicon Transistor 2SC4922 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=47k , R2=47k ). 2106A Very small-sized package permitting 2SC4922- [2SC4922] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1

 8.6. Size:79K  sanyo
 2sc4923.pdf

 8.7. Size:47K  hitachi
 2sc4926.pdf

2SC4926 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4926 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage V

 8.8. Size:34K  hitachi
 2sc4927.pdf

2SC4927 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High breakdown voltage VCES = 1500 V Built-in damper diode type Isolated package TO-3PFM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC4927 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltag

 8.9. Size:179K  inchange semiconductor
 2sc4927.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4927 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) CES Built-in damper diode type Isolated package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV/character display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(

 8.10. Size:232K  inchange semiconductor
 2sc4924.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION High Breakdown Voltage- V(BR)CBO= 1500V(Min) High Switching Speed High Reliability APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag

 8.11. Size:136K  inchange semiconductor
 2sc4923.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION With TO-3PML package High speed High reliability High breakdown voltage APPLICATIONS High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute