2SC4928Silicon NPN Triple DiffusedApplicationTO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 15 A Suitable for large size CRT Display11. Base22. Collector33. EmitterAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4928DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflection outputapplications.ABSOLUTE MAXIMUM RA

Ordering number:EN4766NPN Epitaxial Planar Silicon Transistor2SC4920Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=4.7k , R2=4.7k ).2106A Very small-sized package permitting 2SC4920-[2SC4920]applied sets to be made smaller and slimmer.0.750.30.6 Small ON resistance.0 to 0.1

Ordering number:EN4767NPN Epitaxial Planar Silicon Transistor2SC4921Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=10k , R2=10k ).2106A Very small-sized package permitting 2SC4921-[2SC4921]0.75applied sets to be made smaller and slimmer.0.30.6 Small ON resistance.0 to 0.1

Ordering number:EN4768NPN Epitaxial Planar Silicon Transistor2SC4922Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=47k , R2=47k ).2106A Very small-sized package permitting 2SC4922-[2SC4922]0.75applied sets to be made smaller and slimmer.0.30.6 Small ON resistance.0 to 0.1

2SC4926Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4926Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage V

2SC4927Silicon NPN Triple DiffusedApplicationTV/character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V Built-in damper diode type Isolated packageTO-3PFMOutlineTO-3PFM211. Base ID2. Collector 3. Emitter13232SC4927Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltag

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4927DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)CESBuilt-in damper diode typeIsolated package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV/character display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltag

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION With TO-3PML package High speed High reliability High breakdown voltage APPLICATIONS High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute