2SC513O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC513O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 40(max) pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar 2SC513O
2SC513O Datasheet (PDF)
2sc5132.pdf
2SC5132ASilicon NPN Triple Diffused PlanarApplicationTO3PFM (N)Character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V, IC = 8 A Builtin damper diode type Isolated packageCTO-3PFMB1. Base2. Collector13. Emitter23EAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
2sc5136.pdf
2SC5136Silicon NPN EpitaxialADE-208-2231st. EditionApplicationVHF/UHF wide band amplifierFeatures High gain bandwidth productfT = 3.8 GHz typ High gain, low noise figurePG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5136Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base v
2sc5138.pdf
2SC5138Silicon NPN EpitaxialADE-208-225A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 6 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YL.Attention: This device is very sensitive to ele
2sc5139.pdf
2SC5139Silicon NPN EpitaxialADE-208-2261st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5139Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base
2sc5137.pdf
2SC5137Silicon NPN EpitaxialADE-208-2241st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5137Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas
2sc5130.pdf
2SC5130Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit0.24.20.210.1c0.5VCBO 600 V ICBO VCB=500V 100max A2.8
2sc5130.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5130DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050