2SC513O Specs and Replacement

Type Designator: 2SC513O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 40 max pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO39

 2SC513O Substitution

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2SC513O datasheet

 8.1. Size:98K  1

 2sc50x 2sc51x 2sc52x 2sc511 2sc513 2sc530.pdf pdf_icon

2SC513O

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 8.2. Size:23K  hitachi

 2sc5132.pdf pdf_icon

2SC513O

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 8.3. Size:58K  hitachi

 2sc5136.pdf pdf_icon

2SC513O

2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features High gain bandwidth product fT = 3.8 GHz typ High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base v... See More ⇒

 8.4. Size:47K  hitachi

 2sc5138.pdf pdf_icon

2SC513O

2SC5138 Silicon NPN Epitaxial ADE-208-225A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 6 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YL . Attention This device is very sensitive to ele... See More ⇒

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Detailed specifications: 2SC511R, 2SC512, 2SC5120, 2SC512O, 2SC512R, 2SC513, 2SC5130, 2SC5132A, BD135, 2SC513R, 2SC514, 2SC515, 2SC515A, 2SC516, 2SC516A, 2SC516N, 2SC517

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