2SC52 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC52
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 175 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO5
Búsqueda de reemplazo de 2SC52
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2SC52 datasheet
2sc5200.pdf
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Typical fT = 30 MHz Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity
2sc5200n.pdf
2SC5200N Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 2SC5200N 2SC5200N 2SC5200N 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output
2sc5254.pdf
2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1
2sc5232.pdf
2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current I = 500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Colle
2sc5255.pdf
2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1
2sc5280.pdf
2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo
2sc5233.pdf
2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current I = 500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Colle
2sc5208.pdf
2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications High-speed switching tr = 1.0 s (max) ,tf = 1.5 s (max) High breakdown voltage VCEO = 400 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating
2sc5200r 2sc5200o.pdf
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collecto
2sc5242.pdf
2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit mm High Collector breakdown voltage V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector
2sc5200.pdf
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit mm High breakdown voltage V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter
2sc5245a.pdf
Ordering number ENA1074 2SC5245A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5245A OSC Applications Features Low-noise NF=0.9dB typ (f=1GHz). NF=1.4dB typ (f=1.5GHz). High gain S21e 2=10dB typ (f=1.5GHz). High cut-off frequency fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1
2sc5231a.pdf
Ordering number ENA1077 2SC5231A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5231A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim.
2sc5228.pdf
Ordering number EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =13.5dB typ (f=1GHz). 2110A High cutoff frequency fT=7GHz typ. [2SC5228] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 Emitter
2sc5299.pdf
Ordering number EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5299] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
2sc5230.pdf
Ordering number EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =10.5dB typ (f=1GHz). 2004B High cutoff frequency fT=6.5GHz typ. [2SC5230] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Base 2 Emitter 3 Collecto
2sc5264.pdf
Ordering number ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079C Adoption of MBIT process. [2SC5264] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO
2sc5231.pdf
Ordering number EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2106A High cutoff frequency fT=7GHz typ. [2SC5231] Very small-sized package permiting 2SC5231- 0.75 0.3 0.6 applied set
2sc5297.pdf
Ordering number ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5297] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
2sc5229.pdf
Ordering number EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =10.5dB typ (f=1GHz). 2038A High cutoff frequency fT=6.5GHz typ. [2SC5229] Medium power operation NF=1.7dB typ (f=1GHz). 4.5 2 1.5 (VCE=8V
2sc5264ls.pdf
Ordering number ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5264] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 Spe
2sc5277a.pdf
Ordering number ENA1075 2SC5277A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5277A OSC Applications Features Low-noise NF=0.9dB typ (f=1GHz). NF=1.4dB typ (f=1.5GHz). High gain S21e 2=10dB typ (f=1.5GHz). High cut-off frequency fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1
2sc5245.pdf
Ordering number EN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2059B 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5245] High cutoff frequency fT=11GHz typ. 0.3 Low-voltage, low-current operation 0.
2sc5265.pdf
Ordering number EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5265] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55
2sc5238.pdf
Ordering number EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5238] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.
2sc5276.pdf
Ordering number EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2110A 2 High gain S21e =11dB typ (f=1.5GHz). [2SC5276] 1.9 High cutoff frequency fT=11GHz typ. 0.95 0.95 Low-voltage, low-current ope
2sc5275.pdf
Ordering number EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2018B 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5275] High cutoff frequency fT=11GHz typ. 0.4 Low-voltage, low-current operation 0.1
2sc5277.pdf
Ordering number EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2106A 2 High gain S21e =10dB typ (f=1.5GHz). [2SC5277] High cutoff frequency fT=11GHz typ. 0.75 0.3 0.6 Low-voltage, low-current ope
2sc5291.pdf
Ordering number ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2084B Can be provided in taping. [2SC5291] 9.5mm onboard mounting height. 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collecto
2sc5227.pdf
Ordering number EN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2018B High cutoff frequency fT=7GHz typ. [2SC5227] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3
2sc5226.pdf
Ordering number EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2059B High cutoff frequency fT=7GHz typ. [2SC5226] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emi
2sc5227a.pdf
Ordering number ENA1063 2SC5227A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5227A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditio
2sc5265ls.pdf
Ordering number ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features Package Dimensions High breakdown voltage(VCBO=1200V). unit mm High reliability(Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5265LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Base 2 Collector
2sc5298.pdf
Ordering number EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5298] Adoption of MBIT process. 16.0 5.6 3.4 On-chip da
2sc5226a.pdf
Ordering number ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5226A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditio
2sc5296.pdf
Ordering number ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed tf=100ns typ. unit mm High breakdown voltage VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5296] Adoption of MBIT process. 16.0 5.6 3.4 On-chip
2sc5200 fjl4315.pdf
January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A. TO-264 1 High Power Dissipation 150watts. High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO=250V Wide S.O.A for reliable operation. Excel
2sc5242 fja4313.pdf
January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A TO-3P 1 High Power Dissipation 130watts 1.Base 2.Collector 3.Emitter High Frequency 30MHz. High Voltage VCEO=250V Wide S.O.A for reliable operation. Excelle
2sc5288.pdf
DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P 1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold
2sc5289.pdf
DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P 1 = 27 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold
2sa1964 2sc5248.pdf
2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282
2sc5231a-8.pdf
Ordering number ENA1077A 2SC5231A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single SMCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slim Specifications Absolute Maximum Ratings at Ta=25 C Paramete
2sc5227a-4-tb-e 2sc5227a-5-tb-e.pdf
Ordering number ENA1063A 2SC5227A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-t
2sc5226a-4 2sc5226a-5.pdf
Ordering number ENA1062A 2SC5226A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-
2sc5245a-4.pdf
Ordering number ENA1074A 2SC5245A RF Transistor http //onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features Low-noise NF=0.9dB typ (f=1GHz) NF=1.4dB typ (f=1.5GHz) High gain 2 S21e =10dB typ (f=1.5GHz) High cut-off frequency fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) fT=3.5GHz typ S21e =5.5dB typ (f=1.5GHz)
2sc5242 fja4313.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjl4315 2sc5200.pdf
DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 1. Base 2. Collector 3. Emitter Features 1 High Current Capability IC = 17 A TO-264-3LD CASE 340CA High Power Dissipation 150 W High Frequency 30 MHz High Voltage VCEO = 250 V MARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple
2sc5226a.pdf
Ordering number ENA1062A 2SC5226A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-
2sc5244.pdf
Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 1.5 Wide area of safe operation (ASO) 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (TC=25
2sc5223.pdf
Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 4.35 0.1 For high-speed switching 0.5 0.1 1.0 0.1 Features 0.1 0.05 0.93 0.1 0.5 0.1 High collector to base voltage VCBO 0.75 0.1 2.3 0.1 High collector to emitter VCEO 4.6 0.1 1 Base 2 Collector 3 Emitter 1 2 3 Absolute Maximum Ratings (Ta=25 C)
2sc5295.pdf
Transistors 2SC5295 Silicon NPN epitaxial planer type Unit mm For 2 GHz band low-noise amplification 0.2+0.1 0.15+0.1 0.05 0.05 3 Features High transition frequency fT Low collector output capacitance Cob SS-mini type package, allowing downsizing of the equipment and 1 2 (0.5) (0.5) automatic insertion through the tape packing. 1.0 0.1 1.6 0.1 5 Absolut
2sc5294.pdf
Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (Ta=
2sc5270.pdf
Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=
2sc5200.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube ww
2sc5237.pdf
2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 400 MHz typ High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ Suitable for wide band video amplifier Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SC5237 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratin
2sc5207.pdf
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2sc5250.pdf
Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.fr
2sc5251.pdf
2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.2 sec (typ) Isolated package TO-3P FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Un
2sc5247.pdf
2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz typ High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas
2sc5273.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5225.pdf
2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.4 GHz Small output capacitance.
2sc5246.pdf
2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas
2sc5252.pdf
2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf 0.15 sec(typ.) Isolated package TO 3P FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25 C) Item Sym
2sc5219.pdf
2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features High breakdown voltage VCES = 1700 V High speed switching tf = 0.15 sec (typ) Built-in damper diode type Isolated package TO-3P FM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC5219 Absolute Maximum Ratings (Ta = 25 C
2sc5218.pdf
2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base
2sc5287.pdf
2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose (Ta=25 C) Absolute maximum ratings Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 ICBO VCBO 900 V VCB=800V 100max A IEBO VEB
2sc5210.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc5209.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc5212.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc5214.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc5299.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5299 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum abso
2sc5280.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5280 DESCRIPTION With TO-3P(H)IS package High voltage Low saturation voltage High speed Bult-in damper diode APPLICATIONS High speed switching applications Horizontal deflection output for medium resolution display,color TV PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (
2sc5297.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5297 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum abs
2sc5271.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION With TO-220F package APPLICATIONS For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba
2sc5287.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION With TO-3PN package High voltage,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
2sc5296.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Em
2sc5239.pdf
2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC5239 Symbol Conditions 2SC5239 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IEB
2sc5249.pdf
2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC5249 Symbol 2SC5249 Symbol Conditions Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 100max VCBO 600 ICBO VCB=600V A V 100max VC
2sc5271.pdf
2SC5271 Silicon NPN Triple Diffused Planar Transistor Application Resonant Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5271 Symbol Conditions 2SC5271 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300V 100max A V VCEO 200 IEBO VEB=7V 100max A V VE
2sc5287.pdf
2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose (Ta=25 C) Absolute maximum ratings Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 ICBO VCBO 900 V VCB=800V 100max A IEBO VEB
2sc5200bl.pdf
RoHS 2SC5200BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 15A/230V/150W 5.00 20.00 0.20 18.00 3.30 0.20 TO-3PL FEATURES High breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL 0.60 3.20 TO-3PL package which can be installed to the 5.45 0.05 5.45 0.05 heat sink with one screw 1 2 3 APPLICATIONS Suit
2sc5254.pdf
SMD Type Transistors NPN Transistors 2SC5254 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=7V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5232.pdf
SMD Type Transistors NPN Transistors 2SC5232 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
2sc5210.pdf
SMD Type Transistors NPN Transistors 2SC5210 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=250V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 250 V Emitter - Base Voltag
2sc5216.pdf
SMD Type Transistors NPN Transistors 2SC5216 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5229.pdf
SMD Type Transistors NPN Transistors 2SC5229 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE
2sc5259.pdf
SMD Type Transistors NPN Transistors 2SC5259 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=7V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5211.pdf
SMD Type Transistors NPN Transistors 2SC5211 Features 1.70 0.1 High voltage VCEO=50V. Small package for mounting. Complementary to 2SA1945 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 4 C
2sc5209.pdf
SMD Type Transistors NPN Transistors 2SC5209 1.70 0.1 Features High hFE hFE=600 to 1800 High breakdown voltage Small package for mounting 0.42 0.1 0.46 0.1 Complementary to 2SA1944 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V E
2sc5227.pdf
SMD Type Transistors NPN Transistors 2SC5227 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc5212.pdf
SMD Type Transistors NPN Transistors 2SC5212 Features 1.70 0.1 Low Collector saturation voltage High fT fT=180MHz typ Excellent liinearity of DC forward current gain 0.42 0.1 High collector current ICP=1A 0.46 0.1 Complementary to 2SA1946 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba
2sc5218.pdf
SMD Type Transistors NPN Transistors 2SC5218 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=9V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
2sc5214.pdf
SMD Type Transistors NPN Transistors 2SC5214 1.70 0.1 Features High fT fT=100MHz typ Excellent liinearity of DC forward current gain High collector current ICP=1.5A 0.42 0.1 0.46 0.1 Complementary to 2SA1947 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emi
2sc5200.pdf
Silicon NPN transistor Features Power Amplifier Applications Complementary to 2SA1943 High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc
2sc5200t7tl.pdf
2SC5200T7TL Silicon NPN Power Transistor DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER
2sc5200.pdf
2SC5200 Minos High Power Products NPN TRANSISTORS Features Power Amplifier Applications Complementaryto 2SA1943 Highcollector voltage VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change in temperature, etc.) may causethis pro
2sc5299.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5299 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-
2sc5200r 2sc5200o.pdf
SPTECH Product Specification INCHANGE Semiconductor isc Product Specification SPTECH Silicon NPN Power Transistor 2SC5200 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifie
2sc5244.pdf
isc Silicon NPN Power Transistor 2SC5244 DESCRIPTION High breakdown voltage, and high reliability Wide area of safe operation High-speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sc5200n.pdf
isc Silicon NPN Power Transistor 2SC5200N DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency am
2sc5250.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5250 DESCRIPTION Silicon NPN diffused planar transistor High speed switching Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output Switching regulator and general purpose AB
2sc5299.pdf
isc Silicon NPN Power Transistor 2SC5299 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sc5280.pdf
isc Silicon NPN Power Transistor 2SC5280 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high medium resolution display& color TV. High speed switching applications
2sc5297.pdf
isc Silicon NPN Power Transistor 2SC5297 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sc5243.pdf
isc Silicon NPN Power Transistor 2SC5243 DESCRIPTION Collector Emitter Sustaining Voltage V =1700 V(Min) CEO Low Collector Saturation Voltage V = 3V(Max.)@ I = 2.8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
2sc5265.pdf
isc Silicon NPN Power Transistor 2SC5265 DESCRIPTION High Breakdown Voltage-(Vcb=1200V) High Reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter-controlled Lighting ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-E
2sc5249.pdf
isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 600V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
2sc5241.pdf
isc Silicon NPN Power Transistors 2SC5241 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc5252.pdf
isc Silicon NPN Power Transistor 2SC5252 DESCRIPTION High speed switching High breakdown voltage VCBO = 1500 V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Vo
2sc5248.pdf
isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SA1964 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIM
2sc5200h.pdf
isc Silicon NPN Power Transistor 2SC5200H DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applicati
2sc5271.pdf
isc Silicon NPN Power Transistor 2SC5271 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Saturation Voltage- V = 1.0V(Max)@ (I = 2.5A, I = 0.5A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for resonant switching regulator and general purpose applications. ABSOLUTE MAXIMUM
2sc5227.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5227 DESCRIPTION High Gain Bandwidth Product f = 7 GHz TYP. T High Gain, Low Noise Figure S 2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF wideband low noise amplifier app
2sc5242.pdf
isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION High Collector Breakdown Voltage- V = 230V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SA1962 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications
2sc5287.pdf
isc Silicon NPN Power Transistor 2SC5287 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc5200.pdf
isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency ampl
2sc5218.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5218 DESCRIPTION High Gain Bandwidth Product f = 9 GHz TYP. T High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF UHF amplifiers. ABSOLUTE MAXIMUM RA
2sc5296.pdf
isc Silicon NPN Power Transistor 2SC5296 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =
Otros transistores... 2SC516A , 2SC516N , 2SC517 , 2SC518 , 2SC518A , 2SC519 , 2SC519A , 2SC519M , A1013 , 2SC520 , 2SC5206 , 2SC5207A , 2SC520A , 2SC520M , 2SC521 , 2SC5219 , 2SC521A .
History: NSD457 | ZTX4400 | BC253CA | 2N5872B | 2N5201 | 2SD236 | 2SC4522
History: NSD457 | ZTX4400 | BC253CA | 2N5872B | 2N5201 | 2SD236 | 2SC4522
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