2SC52 Datasheet and Replacement

2SC5200High power NPN epitaxial planar bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Typical fT = 30 MHzApplication Audio power amplifier321DescriptionTO-264This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity

2SC5200NBipolar Transistors Silicon NPN Triple-Diffused Type2SC5200N2SC5200N2SC5200N2SC5200N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 230 V (min)(2) Complementary to 2SA1943N(3) Recommended for 100-W high-fidelity audio frequency amplifier output

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1

2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColle

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1

2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo

2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColle

2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications High-speed switching: tr = 1.0 s (max) ,tf = 1.5 s (max) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collecto

2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm High Collector breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter

Ordering number : ENA1074 2SC5245ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5245AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number : ENA1077 2SC5231ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5231AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim.

Ordering number:EN5035NPN Epitaxial Planar Silicon Transistor2SC5228VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =13.5dB typ (f=1GHz).2110A High cutoff frequency : fT=7GHz typ.[2SC5228]1.90.95 0.950.40.164 30 to 0.1210.60.95 0.851 : Emitter

Ordering number:EN5293NPN Triple Diffused Planar Silicon Transistor2SC5299Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5299] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:EN5046NPN Epitaxial Planar Silicon Transistor2SC5230VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =10.5dB typ (f=1GHz).2004B High cutoff frequency : fT=6.5GHz typ.[2SC5230]5.04.04.00.450.50.440.451 : Base2 : Emitter3 : Collecto

Ordering number:ENN5287NPN Triple Diffused Planar Silicon Transistor2SC5264Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079C Adoption of MBIT process.[2SC5264]4.510.02.83.20.91.20.70.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO :

Ordering number:EN5036BNPN Epitaxial Planar Silicon Transistor2SC5231VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2106A High cutoff frequency : fT=7GHz typ.[2SC5231] Very small-sized package permiting 2SC5231-0.750.30.6applied set

Ordering number:ENN5291NPN Triple Diffused Planar Silicon Transistor2SC5297Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5297] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:EN5045NPN Epitaxial Planar Silicon Transistor2SC5229VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =10.5dB typ (f=1GHz).2038A High cutoff frequency : fT=6.5GHz typ.[2SC5229] Medium power operation : NF=1.7dB typ (f=1GHz).4.521.5(VCE=8V

Ordering number:ENN5287ANPN Triple Diffused Planar Silicon Transistor2SC5264LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5264]10.0 4.53.22.80.91.2 1.20.75 0.71 : Base1 2 32 : Collector3 : Emitter2.55 2.55Spe

Ordering number : ENA1075 2SC5277ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5277AOSC ApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1

Ordering number:EN5184ANPN Epitaxial Planar Silicon Transistor2SC5245UHF to S-Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2059B2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5245] High cutoff frequency : fT=11GHz typ.0.3 Low-voltage, low-current operation0.

Ordering number:EN5321NPN Triple Diffused Planar Silicon Transistor2SC5265Inverter-controlled Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5265]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55

Ordering number:EN5126NPN Triple Diffused Planar Silicon Transistor2SC5238Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5238] Adoption of MBIT process.20.0 5.01.751.02.91.

Ordering number:EN5186NPN Epitaxial Planar Silicon Transistor2SC5276UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2110A2 High gain : S21e =11dB typ (f=1.5GHz).[2SC5276]1.9 High cutoff frequency : fT=11GHz typ.0.95 0.95 Low-voltage, low-current ope

Ordering number:EN5185NPN Epitaxial Planar Silicon Transistor2SC5275UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2018B2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5275] High cutoff frequency : fT=11GHz typ.0.4 Low-voltage, low-current operation0.1

Ordering number:EN5187NPN Epitaxial Planar Silicon Transistor2SC5277UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).2106A2 High gain : S21e =10dB typ (f=1.5GHz).[2SC5277] High cutoff frequency : fT=11GHz typ.0.750.30.6 Low-voltage, low-current ope

Ordering number : ENN5282A2SC5291NPN Epitaxial Planar Silicon Transistor2SC5291High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes. unit : mm Large current capacity. 2084B Can be provided in taping.[2SC5291] 9.5mm onboard mounting height.4.51.9 2.610.51.2 1.41.20.51.60.51 2 31 : Emitter2 : Collecto

Ordering number:EN5034NPN Epitaxial Planar Silicon Transistor2SC5227VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2018B High cutoff frequency : fT=7GHz typ.[2SC5227]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter3 :

Ordering number:EN5032ANPN Epitaxial Planar Silicon Transistor2SC5226VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2059B High cutoff frequency : fT=7GHz typ.[2SC5226]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emi

Ordering number : ENA1063 2SC5227ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5227AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio

Ordering number : ENN5321A2SC5265LSNPN Triple Diffused Planar Silicon Transistor2SC5265LSInverter-Controlled Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCBO=1200V).unit : mm High reliability(Adoption of HVP process).2079D Adoption of MBIT process.[2SC5265LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector

Ordering number:EN5292NPN Triple Diffused Planar Silicon Transistor2SC5298Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5298] Adoption of MBIT process.16.05.63.4 On-chip da

Ordering number : ENA1062 2SC5226ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5226AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio

Ordering number:ENN5290ANPN Triple Diffused Planar Silicon Transistor2SC5296Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5296] Adoption of MBIT process.16.05.63.4 On-chip

January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel

January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle

DATA SHEETSILICON TRANSISTOR2SC5288NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 24 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

DATA SHEETSILICON TRANSISTOR2SC5289NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 27 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

Transistors 2SC5274(96-203-C329)304

Ordering number : ENA1077A2SC5231ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single SMCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slimSpecificationsAbsolute Maximum Ratings at Ta=25CParamete

Ordering number : ENA1063A2SC5227ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single CPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-t

Ordering number : ENA1062A2SC5226ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-

Ordering number : ENA1074A2SC5245ARF Transistorhttp://onsemi.com10V, 30mA, fT=8GHz, NPN Single MCPFeatures Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain 2 : S21e =10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz)

Ordering number : ENA1075A2SC5277ARF Transistorhttp://onsemi.com10V, 30mA, fT=8GHz, NPN Single SMCPFeatures Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain 2 : S21e =10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz)

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

DATA SHEETwww.onsemi.comNPN Epitaxial SiliconTransistorFJL4315, 2SC52001. Base2. Collector3. EmitterFeatures1 High Current Capability: IC = 17 ATO-264-3LDCASE 340CA High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 VMARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple

Ordering number : ENA1062A2SC5226ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-

Power Transistors2SC5244, 2SC5244ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching 1.5Wide area of safe operation (ASO)1.52.0 0.32.7 0.33.0 0.3Absolute Maximum Ratings (TC=25

Transistor2SC5216Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25

Power Transistors2SC5243Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching 1.5Wide area of safe operation (ASO)1.52.0 0.32.7 0.33.0 0.3Absolute Maximum Ratings (TC=25C)1.0

Power Transistors2SC5223Silicon NPN triple diffusion planar typeUnit: mm6.5 0.12.3 0.15.3 0.14.35 0.1For high-speed switching 0.5 0.11.0 0.1Features0.1 0.050.93 0.10.5 0.1High collector to base voltage VCBO0.75 0.1 2.3 0.1High collector to emitter VCEO4.6 0.11:Base2:Collector3:Emitter1 2 3Absolute Maximum Ratings (Ta=25C)

Transistors2SC5295Silicon NPN epitaxial planer typeUnit: mmFor 2 GHz band low-noise amplification0.2+0.1 0.15+0.10.05 0.053 Features High transition frequency fT Low collector output capacitance Cob SS-mini type package, allowing downsizing of the equipment and 1 2(0.5) (0.5)automatic insertion through the tape packing.1.00.11.60.15 Absolut

Transistor2SC5216Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25

Power Transistors2SC5294, 2SC5294ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (Ta=

Power Transistors2SC5270, 2SC5270ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tubeww

2SC5237Silicon NPN EpitaxialApplicationHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 400 MHz typ High voltage and low output capacitanceVCEO = 250 V, Cob = 3.5 pF typ Suitable for wide band video amplifierOutlineTO-126FM1. Emitter 2. Collector 3. Base1232SC5237Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratin

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2SC5251Silicon NPN Triple Diffused PlanarPreliminaryApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.2 sec (typ) Isolated packageTO-3PFM (N)OutlineTO-3PFM (N)1. Base 2. Collector 3. Emitter1232SC5251Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Un

2SC5247Silicon NPN EpitaxialADE-208-2811st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 13.5 GHz typ High gain, low noise figurePG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5247Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC5225Silicon NPN Epitaxial TransistorADE-208-3931st. EditionApplication Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960.Features High voltage large current operation.VCEO = 80 V, IC = 300 mA High fT.fT = 1.4 GHz Small output capacitance.

2SC5246Silicon NPN EpitaxialADE-208-2641st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5246Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas

2SC5252Silicon NPN Triple Diffused PlanarADE-208-391A (Z)2nd. EditionApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf 0.15 sec(typ.) Isolated packageTO3PFMOutlineTO-3PFM1. Base2. Collector3. Emitter1232SC5252Absolute Maximum Ratings (Ta = 25C)Item Sym

2SC5219Silicon NPN Triple Diffused PlanarApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCES = 1700 V High speed switchingtf = 0.15 sec (typ) Built-in damper diode type Isolated packageTO-3PFMOutlineTO-3PFM211. Base ID2. Collector 3. Emitter13232SC5219Absolute Maximum Ratings (Ta = 25C

2SC5218Silicon NPN EpitaxialADE-208-2791st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz typ High gain, low noise figurePG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHzOutlineMPAK311. Emitter2. Base23. Collector2SC5218Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base

2SC5287Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit0.24.80.415.60.19.6 2.0ICBOVCBO 900 V VCB=800V 100max AIEBO VEB

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC5299 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abso

JMnic Product SpecificationSilicon NPN Power Transistors 2SC5280 DESCRIPTION With TO-3P(H)IS package High voltage Low saturation voltage High speed Bult-in damper diode APPLICATIONS High speed switching applications Horizontal deflection output for medium resolution display,color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5297 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abs

JMnic Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION With TO-220F package APPLICATIONS For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

JMnic Product SpecificationSilicon NPN Power Transistors 2SC5287 DESCRIPTION With TO-3PN package High voltage,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

JMnic Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Em

2SC5239Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Symbol 2SC5239 Symbol Conditions 2SC5239 UnitUnit0.24.80.210.20.12.0VCBO 900 ICBO VCB=800V 100max AVVCEO 550 IEB

2SC5249Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC5249Symbol 2SC5249 Symbol Conditions UnitUnit0.24.20.210.1c0.52.8100maxVCBO 600 ICBO VCB=600V AV100maxVC

2SC5271Silicon NPN Triple Diffused Planar Transistor Application : Resonant Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5271 Symbol Conditions 2SC5271 UnitUnit0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300V 100max AVVCEO 200 IEBO VEB=7V 100max AVVE

2SC5287Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit0.24.80.415.60.19.6 2.0ICBOVCBO 900 V VCB=800V 100max AIEBO VEB

NPN Silicon NPN Triple Diffused Transistor R 2SC5200 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEOV =250V (min) V =250V (min) CEO CEO 2SA1943 Complementary to 2SA1943

RoHS 2SC5200BL Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor15A/230V/150W5.0020.000.2018.003.300.20TO-3PLFEATURESHigh breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL0.603.20TO-3PL package which can be installed to the 5.450.05 5.450.05heat sink with one screw1 2 3 APPLICATIONSSuit

SMD Type TransistorsNPN Transistors2SC5254SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=7V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

SMD Type TransistorsNPN Transistors2SC5232SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=12V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type TransistorsNPN Transistors2SC5210SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=250V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 250 V Emitter - Base Voltag

SMD Type TransistorsNPN Transistors2SC5216SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

SMD Type TransistorsNPN Transistors2SC5229SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC5259SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=7V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

SMD Type TransistorsNPN Transistors2SC5211 Features 1.70 0.1 High voltage VCEO=50V. Small package for mounting. Complementary to 2SA19450.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 4 C

SMD Type TransistorsNPN Transistors2SC52091.70 0.1 Features High hFE : hFE=600 to 1800 High breakdown voltage Small package for mounting0.42 0.10.46 0.1 Complementary to 2SA19441.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V E

SMD Type TransistorsNPN Transistors2SC5227SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type TransistorsNPN Transistors2SC5212 Features1.70 0.1 Low Collector saturation voltage High fT fT=180MHz typ Excellent liinearity of DC forward current gain0.42 0.1 High collector current ICP=1A 0.46 0.1 Complementary to 2SA19461.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

SMD Type TransistorsNPN Transistors2SC5218SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=9V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type TransistorsNPN Transistors2SC52141.70 0.1 Features High fT fT=100MHz typ Excellent liinearity of DC forward current gain High collector current ICP=1.5A0.42 0.10.46 0.1 Complementary to 2SA19471.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emi

Silicon NPN transistorFeatures: Power Amplifier Applications Complementary to 2SA1943 High collector voltage:VCEO=230V (min) Recommended for 100-W high-fidelity audio frequencyamplifier Output stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant change intemperature, etc.) may cause this produc

2SC5200T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER

2SC5200Minos High Power ProductsNPN TRANSISTORSFeatures:Power Amplifier ApplicationsComplementaryto 2SA1943Highcollector voltage:VCEO=230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis pro

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-

SPTECH Product SpecificationINCHANGE Semiconductor isc Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifie

isc Silicon NPN Power Transistor 2SC5244DESCRIPTIONHigh breakdown voltage, and high reliabilityWide area of safe operationHigh-speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SC5200NDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943NMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency am

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5250DESCRIPTIONSilicon NPN diffused planar transistorHigh speed switchingBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeAB

isc Silicon NPN Power Transistor 2SC5299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5239DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC5280DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high medium resolutiondisplay& color TV.High speed switching applications

isc Silicon NPN Power Transistor 2SC5297DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon NPN Power Transistor 2SC5243DESCRIPTIONCollectorEmitter Sustaining VoltageV =1700 V(Min)CEOLow Collector Saturation Voltage: V = 3V(Max.)@ I = 2.8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon NPN Power Transistor 2SC5265DESCRIPTIONHigh Breakdown Voltage-(Vcb=1200V) High ReliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter-controlledLightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-E

isc Silicon NPN Power Transistor 2SC5249DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 600V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

isc Silicon NPN Power Transistors 2SC5241DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC5252DESCRIPTIONHigh speed switchingHigh breakdown voltageVCBO = 1500 VMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Vo

isc Silicon NPN Power Transistor 2SC5248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SA1964Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SC5200HDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicati

isc Silicon NPN Power Transistor 2SC5271DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOLow Saturation Voltage-: V = 1.0V(Max)@ (I = 2.5A, I = 0.5A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for resonant switching regulator and generalpurpose applications.ABSOLUTE MAXIMUM

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5227DESCRIPTIONHigh Gain Bandwidth Productf = 7 GHz TYP.THigh Gain, Low Noise FigureS 2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF wideband low noise amplifierapp

isc Silicon NPN Power Transistor 2SC5242DESCRIPTIONHigh Collector Breakdown Voltage-: V = 230V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SA1962Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applications

isc Silicon NPN Power Transistor 2SC5287DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency ampl

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5218DESCRIPTIONHigh Gain Bandwidth Productf = 9 GHz TYP.THigh Gain, Low Noise FigurePG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF ~ UHF amplifiers.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SC5296DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applicaitionsABSOLUTE MAXIMUM RATINGS(T =